Patents by Inventor Bingchen DENG

Bingchen DENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
    Publication number: 20260239657
    Abstract: Provided are a semiconductor device including a two-dimensional (2D) material, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device. The semiconductor device includes at least one channel layer including a two-dimensional (2D) semiconductor material, a source electrode and a drain electrode, provided on both sides of each channel layer of the at least one channel layer, and a gate electrode provided on each channel layer of the at least one channel layer, between the source electrode and the drain electrode. Each channel layer of the at least one channel layer includes a source region contacting the source electrode, and a drain region contacting the drain electrode, and at least one of the source region and the drain region includes a metallic grain boundary.
    Type: Application
    Filed: January 30, 2026
    Publication date: August 13, 2026
    Applicants: Samsung Electronics Co., Ltd., President and Fellows Of Harvard College
    Inventors: Changhyun KIM, Elise BRUTSCHEA, Hongkun PARK, Bingchen DENG, Minsu SEOL, Kyung-Eun BYUN, Yeonchoo CHO