Patents by Inventor BINGHUI BAO

BINGHUI BAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11348781
    Abstract: The present disclosure provides a wafer annealing method, including: preparing a wafer, the wafer includes a plurality of regions concentrically disposed on the wafer; heating the plurality of regions, the heating process includes a plurality of heating stages, each of the heating stages has a different heating rate, temperatures of the plurality of regions vary in each of the heating stages; performing heat preservation on the plurality of regions; and cooling the plurality of regions through blowing nitrogen. The wafer annealing method can improve the electrical uniformity of the wafer.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: May 31, 2022
    Assignee: NEXCHIP SEMICONDUCTOR CO., LTD.
    Inventors: Yingya Shao, Houjen Chu, Binghui Bao
  • Publication number: 20210351029
    Abstract: The present disclosure provides a wafer annealing method, including: preparing a wafer, the wafer includes a plurality of regions concentrically disposed on the wafer; heating the plurality of regions, the heating process includes a plurality of heating stages, each of the heating stages has a different heating rate, temperatures of the plurality of regions vary in each of the heating stages; performing heat preservation on the plurality of regions; and cooling the plurality of regions through blowing nitrogen. The wafer annealing method can improve the electrical uniformity of the wafer.
    Type: Application
    Filed: July 10, 2020
    Publication date: November 11, 2021
    Applicant: NEXCHIP SEMICONDUCTOR CO., LTD.
    Inventors: YINGYA SHAO, HOUJEN CHU, BINGHUI BAO