Abstract: A piezoelectric microphone, includes: a wafer substrate including a cavity; a plurality of cantilever beams with a piezoelectric deck structure; a fixed column; a plurality of flexible elastic members; and a connecting section. The plurality of cantilever beams each includes a fixed end and a free end suspended above the cavity. The plurality of cantilever beams is of a structure in which one end is narrow and the other end is wide, and the fixed end is relatively narrow. The fixed column is disposed at the center of the bottom surface of the cavity. The fixed ends of the plurality of cantilever beams are all connected to the top surface of the fixed column. A gap is provided between every two adjacent cantilever beams. The plurality of flexible elastic members is connected to free ends of two adjacent cantilever beams to enable the cantilever beams to vibrate synchronously.

Abstract: The present disclosure provides a film bulk acoustic wave resonator and a preparation method thereof, and relates to the technical field of semiconductors. The film bulk acoustic wave resonator includes a substrate and a bottom electrode, a piezoelectric layer and a top electrode which are located on an upper surface of the substrate, the bottom electrode is provided with a first arched part so as to form a first cavity between the first arched part and the substrate; and a first reflection cavity is formed between the bottom electrode and the piezoelectric layer and located in a slope of the first arched part, the bottom electrode is provided with the first arched part and the first reflection cavity may be located in an oblique plane of the slope of the first arched part.

Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.

Abstract: The present application provides a resonator and a preparation method for a resonator, and relates to the technical field of semiconductors. The method involves introducing a first single crystal substrate to facilitate the epitaxial growth of a high-quality single crystal piezoelectric layer on the first single crystal substrate, and firstly performing ion implantation on the first single crystal substrate to form a damaged layer at a certain depth within it. Therefore, while the first single crystal substrate is removed, it is firstly possible to adopt the heating process, and after the first single crystal substrate is subjected to high-temperature treatment, a first layer and a second layer are split at the damaged layer, thereby a part of the first single crystal substrate is firstly removed, and then the remaining part of the first single crystal substrate is removed by trimming, etching, and other modes.

Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.

Abstract: A resonator and a preparation method of a resonator, and a filter relate to the technical field of resonators.

Abstract: The present disclosure provides a single crystal film bulk acoustic resonator, a manufacturing method for a single crystal film bulk acoustic resonator, and a filter, and relates to the technical field of filters. The method includes: sequentially forming a buffer layer, a piezoelectric layer, and a first electrode that are stacked on a temporary base substrate; forming a first bonding layer on the first electrode; providing a substrate; etching the substrate to form a plurality of first bumps on a surface of the substrate; forming a second bonding layer covering top surfaces of the plurality of first bumps on the surface of the substrate; and bonding the second bonding layer located at the top surfaces of the plurality of first bumps to the first bonding layer.

Abstract: A piezoelectric microphone, includes: a wafer substrate including a cavity; a plurality of cantilever beams with a piezoelectric deck structure; a fixed column; a plurality of flexible elastic members; and a connecting section. The plurality of cantilever beams each includes a fixed end and a free end suspended above the cavity. The plurality of cantilever beams is of a structure in which one end is narrow and the other end is wide, and the fixed end is relatively narrow. The fixed column is disposed at the center of the bottom surface of the cavity. The fixed ends of the plurality of cantilever beams are all connected to the top surface of the fixed column. A gap is provided between every two adjacent cantilever beams. The plurality of flexible elastic members is connected to free ends of two adjacent cantilever beams to enable the cantilever beams to vibrate synchronously.