Patents by Inventor Bingjie Cai

Bingjie Cai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of flip-chip structure of group III semiconductor light emitting device
    Patent number: 10147849
    Abstract: This disclosure refers to a manufacturing method of a flip-chip structure of III group semiconductor light emitting device. The manufacturing method includes steps of: growing a substrate, a buffer layer, an N type nitride semiconductor layer, an active layer and a P type nitride semiconductor layer sequentially from bottom to top to form an epitaxial structure, depositing a transparent conductive layer; defining an isolation groove with the yellow light etching process, depositing a first insulation layer structure, depositing a P type contact metal and N type contact metal, depositing a second insulation layer structure, depositing a flip-chip P type electrode and flip-chip N type electrode, then removing the photo resist by using of the stripping process to get a wafer; thinning, dicing, separating, measuring and sorting the wafer.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: December 4, 2018
    Assignee: XIANGNENG HUALEI OPTOELECTRONIC CO., LTD
    Inventors: Shuncheng Xu, Zhiyong Liang, Bingjie Cai
  • MANUFACTURING METHOD OF FLIP-CHIP STRUCTURE OF III GROUP SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20170133549
    Abstract: This disclosure refers to a manufacturing method of a flip-chip structure of III group semiconductor light emitting device. The manufacturing method includes steps of: growing a substrate, a buffer layer, an N type nitride semiconductor layer, an active layer and a P type nitride semiconductor layer sequentially from bottom to top to form an epitaxial structure, depositing a transparent conductive layer; defining an isolation groove with the yellow light etching process, depositing a first insulation layer structure, depositing a P type contact metal and N type contact metal, depositing a second insulation layer structure, depositing a flip-chip P type electrode and flip-chip N type electrode, then removing the photo resist by using of the stripping process to get a wafer; thinning, dicing, separating, measuring and sorting the wafer.
    Type: Application
    Filed: May 5, 2016
    Publication date: May 11, 2017
    Inventors: Shuncheng Xu, Zhiyong Liang, Bingjie Cai