Abstract: A method for forming a three-dimensional (3D) memory device is provided. A dielectric stack including dielectric/sacrificial layer pairs are formed on a doped semiconductor layer. A channel structure extending vertically through the dielectric stack is formed. A slit extending vertically in the dielectric stack is formed to expose the doped semiconductor layer. A bottommost sacrificial layer in the dielectric/sacrificial layer pairs is removed to form a first cavity in the dielectric stack. A source select gate line is formed in the first cavity in the dielectric stack. Sacrificial layers in the dielectric/sacrificial layer pairs are removed to form second cavities in the dielectric stack. Word lines are formed in the second cavities in the dielectric stack.

Abstract: A three-dimensional (3D) memory device includes a doped semiconductor layer, a stack structure, and a channel structure. The stack structure includes interleaved conductive layers and dielectric layers formed on the doped semiconductor layer. The conductive layers include a plurality of word lines, and a drain select gate line. The channel structure extends through the stack structure along a first direction and is in contact with the doped semiconductor layer. The drain select gate line includes a first dielectric layer in contact with the channel structure, and a first polysilicon layer in contact with the first dielectric layer.

Abstract: A semiconductor structure and method for manufacturing thereof are provided. The semiconductor structure includes a vertical transistor. The vertical transistor includes a semiconductor body extending in a first direction. The semiconductor body includes a source/drain at one end of the semiconductor body. The vertical transistor also includes a gate structure coupled to at least one side of the semiconductor body. The gate structure includes a gate dielectric and a gate electrode. The vertical transistor further includes a silicide. At least part of the silicide is above the source/drain. An area of the silicide is larger than an area of a first surface of the source/drain. The first surface is vertical to the first direction.

Abstract: In certain aspects, a three-dimensional (3D) memory device includes channel structures in a first region, word line pick-up structures in a second region, and word lines each extending from the first region into at least a portion of the second region. At least one word line pick-up structure includes multiple sections each electrically connected to a different word line.

Abstract: In certain aspects, a semiconductor device includes a vertical transistor, a metal bit line, and a pad layer. The vertical transistor includes a semiconductor body extending in a first direction, and a gate structure coupled to at least one side of the semiconductor body. The gate structure includes a gate dielectric and a gate electrode. The metal bit line extends in a second direction perpendicular to the first direction and coupled to a terminal of the vertical transistor via an ohmic contact. The pad layer is positioned between the gate electrode and the metal bit line in the first direction. The gate dielectric and the pad layer have different dielectric materials.

Abstract: A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes a plurality of conductive layers and a plurality of dielectric layers stacked alternatingly, and the stack includes a staircase structure. The plurality of contact structures each extends through the insulating structure and in contact with a respective conductive layer of the plurality of conductive layers in the staircase structure. The plurality of support structures extends through the stack in the staircase structure. Each support structure is in contact with one of the plurality of contact structures.

Abstract: A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes conductive layers and dielectric layers stacked alternatingly, and the stack includes a staircase structure. Each contact structure extends through the insulating structure and is in contact with a respective conductive layer in the staircase structure. The support structures extend through the stack in the staircase structure. The contact structures are arranged in a first row and a second row, the first row of contact structures is in electrical contact with the peripheral device, and the second row of contact structures is in electrical insulation with the peripheral device.

Abstract: A 3D includes a memory array structure. The memory array structure includes a first memory array structure and a second memory array structure each having a plurality of conductive/dielectric layer pairs. The memory array structure also includes a staircase structure between the first memory array structure and the second memory array structure. The staircase structure includes a first staircase zone and a second staircase zone. The first staircase zone includes at least one staircase, each including a plurality of stairs. The second staircase zone includes a bridge structure, and at least one other staircase over the bridge structure. The bridge structure connects the first memory array structure and the second memory array structure, the at least one other staircase each including a plurality of stairs. At least one stair in one or more of the at least one staircase is electrically connected to the bridge structure.

Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a stack structure and a contact structure. The stack structure comprises interleaved gate layers and insulating layers. The contact structure comprises a conductive structure and one or more insulating structures. The conductive structure can extend through the stack structure and form a conductive connection with one of the gate layers. The one or more insulating structures surround the conductive structure and electrically isolate the conductive structure from remaining ones of the gate layers. The one or more insulating structures further include one or more first insulating structures. Each of the one or more first insulating structures is disposed between an adjacent pair of the insulating layers, and the one or more first insulating structures are disposed on a first side of the one of the gate layers.

Abstract: A semiconductor device and methods for forming the same are provided. The semiconductor device includes an array of vertical transistors. Each transistor includes a semiconductor body extending in a vertical direction, and a gate structure located adjacent to a sidewall of the semiconductor body. The gate structures of each row of vertical transistors are connected with each other and extend along a first lateral direction to form a word line. A first word line of a first row of vertical transistors is located at a first side of the semiconductor bodies of the first row of vertical transistors along a second lateral direction perpendicular to the first lateral direction; and a second word line of a second row of vertical transistors adjacent to the first row of vertical transistors is located at a second side of the semiconductor bodies of the second row of vertical transistors along the second lateral direction.

Abstract: Aspects of the disclosure provide a memory system, a semiconductor device and fabrication method for the semiconductor device. The semiconductor device includes a memory stack with gate layers and insulating layers, and the gate layers and the insulating layers are stacked alternatingly. The semiconductor device also includes a first channel structure formed in a first channel hole in the memory stack. The first channel structure includes a channel plug in connection with a channel layer of the first channel structure. The semiconductor device also includes an isolation stack including a landing liner layer and an isolation layer. A first portion of the landing liner layer is laid on the channel plug. The semiconductor device includes a first contact structure formed in the isolation stack. The first contact structure is connected to the channel plug via an opening in the first portion of the landing liner layer.

Abstract: According to an aspect of the disclosure, a semiconductor device is provided. The semiconductor device includes one or more bottom select gate (BSG) layers positioned over a substrate, a plurality of word line layers positioned over the one or more BSG layers, and a plurality of insulating layers positioned on the substrate. The plurality of insulating layers is disposed on surfaces of the substrate, the one or more BSG layers, and the plurality of word line layers. The semiconductor device includes a first dielectric structure extending from the substrate and through the one or more BSG layers, and a second dielectric structure extending from the first dielectric structure and through the plurality of word line layers.

Abstract: A three-dimensional (3D) memory device includes a doped semiconductor layer, a stack structure, and a channel structure. The stack structure includes interleaved conductive layers and dielectric layers formed on the doped semiconductor layer. The conductive layers include a plurality of word lines, and a drain select gate line. The channel structure extends through the stack structure along a first direction and is in contact with the doped semiconductor layer. The drain select gate line includes a first dielectric layer in contact with the channel structure, and a first polysilicon layer in contact with the first dielectric layer.