Patents by Inventor Bingliang GUO
Bingliang GUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240068087Abstract: The present disclosure provides a magnetron sputtering apparatus, including a process chamber, a bias power supply assembly, and an excitation power supply assembly. The process chamber is provided with a base assembly and a bias guide assembly. A target is arranged at a top of the process chamber. The base assembly is arranged at a bottom of the process chamber and is configured to support a wafer carrier, drive the wafer carrier to move, and heat the wafer carrier. The bias guide assembly is arranged at the base assembly and configured to support the wafer carrier. The bias guide assembly is electrically in contact with the wafer carrier. The bias power supply assembly is electrically connected to the bias guide assembly and configured to apply a bias voltage to the wafer carrier through the bias guide assembly.Type: ApplicationFiled: December 21, 2021Publication date: February 29, 2024Inventors: Shubo WU, Yinggong MA, Shuaitao SHI, Wenxue XU, Bingliang GUO, Ziyang ZHEN, Lu ZHANG, Yaxin CUI, Hongtao ZHAI
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Patent number: 11710624Abstract: A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.Type: GrantFiled: October 20, 2020Date of Patent: July 25, 2023Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Bingliang Guo, Huaichao Ma, Andong Sun, Henan Zhang, Boyu Dong, Lu Zhang, Yujing Chen
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Patent number: 11315768Abstract: The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.Type: GrantFiled: June 15, 2018Date of Patent: April 26, 2022Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Xuewei Wu, Tong Wang, Boyu Dong, Jun Zhang, Bingliang Guo, Jun Wang, Henan Zhang, Baogang Xu, Huaichao Ma, Shaohui Liu, Kangning Zhao, Yujie Geng, Qingxuan Wang, Yaxin Cui
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Patent number: 10984994Abstract: The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.Type: GrantFiled: October 9, 2016Date of Patent: April 20, 2021Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Jun Zhang, Boyu Dong, Jinrong Zhao, Xuewei Wu, Bingliang Guo, Baogang Xu, Henan Zhang, Tong Wang, Shaohui Liu, Jun Wang
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Patent number: 10937672Abstract: A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.Type: GrantFiled: December 30, 2015Date of Patent: March 2, 2021Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Jun Zhang, Xuewei Wu, Boyu Dong, Baogang Xu, Henan Zhang, Bingliang Guo, Wen Zhang, Shaohui Liu
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Publication number: 20210040605Abstract: A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.Type: ApplicationFiled: October 20, 2020Publication date: February 11, 2021Inventors: Bingliang GUO, Huaichao MA, Andong SUN, Henan ZHANG, Boyu DONG, Lu ZHANG, Yujing CHEN
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Publication number: 20200144035Abstract: The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.Type: ApplicationFiled: June 15, 2018Publication date: May 7, 2020Inventors: Xuewei WU, Tong WANG, Boyu DONG, Jun ZHANG, Bingliang GUO, Jun WANG, Henan ZHANG, Baogang XU, Huaichao MA, Shaohui LIU, Kangning ZHAO, Yujie GENG, Qingxuan WANG, Yaxin CUI
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Patent number: 10640862Abstract: The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.Type: GrantFiled: September 27, 2016Date of Patent: May 5, 2020Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Jun Wang, Boyu Dong, Bingliang Guo, Yujie Geng, Huaichao Ma
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Patent number: 10643843Abstract: The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.Type: GrantFiled: August 30, 2017Date of Patent: May 5, 2020Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.Inventors: Jun Wang, Boyu Dong, Bingliang Guo, Yujie Geng, Huaichao Ma
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Publication number: 20180247799Abstract: The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.Type: ApplicationFiled: October 9, 2016Publication date: August 30, 2018Inventors: Jun ZHANG, Boyu DONG, Jinrong ZHAO, Xuewei WU, Bingliang GUO, Baogang XU, Henan ZHANG, Tong WANG, Shaohui LIU, Jun WANG
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Publication number: 20180230586Abstract: The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.Type: ApplicationFiled: September 27, 2016Publication date: August 16, 2018Inventors: Jun WANG, Boyu DONG, Bingliang GUO, Yujie GENG, Huaichao MA
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Publication number: 20170365493Abstract: A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.Type: ApplicationFiled: December 30, 2015Publication date: December 21, 2017Inventors: Jun ZHANG, Xuewei WU, Boyu DONG, Baogang XU, Henan ZHANG, Bingliang GUO, Wen ZHANG, Shaohui LIU
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Publication number: 20170365466Abstract: The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.Type: ApplicationFiled: August 30, 2017Publication date: December 21, 2017Inventors: Jun WANG, Boyu DONG, Bingliang GUO, Yujie GENG, Huaichao MA