Patents by Inventor Bingliang GUO

Bingliang GUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240068087
    Abstract: The present disclosure provides a magnetron sputtering apparatus, including a process chamber, a bias power supply assembly, and an excitation power supply assembly. The process chamber is provided with a base assembly and a bias guide assembly. A target is arranged at a top of the process chamber. The base assembly is arranged at a bottom of the process chamber and is configured to support a wafer carrier, drive the wafer carrier to move, and heat the wafer carrier. The bias guide assembly is arranged at the base assembly and configured to support the wafer carrier. The bias guide assembly is electrically in contact with the wafer carrier. The bias power supply assembly is electrically connected to the bias guide assembly and configured to apply a bias voltage to the wafer carrier through the bias guide assembly.
    Type: Application
    Filed: December 21, 2021
    Publication date: February 29, 2024
    Inventors: Shubo WU, Yinggong MA, Shuaitao SHI, Wenxue XU, Bingliang GUO, Ziyang ZHEN, Lu ZHANG, Yaxin CUI, Hongtao ZHAI
  • Patent number: 11710624
    Abstract: A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.
    Type: Grant
    Filed: October 20, 2020
    Date of Patent: July 25, 2023
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Bingliang Guo, Huaichao Ma, Andong Sun, Henan Zhang, Boyu Dong, Lu Zhang, Yujing Chen
  • Patent number: 11315768
    Abstract: The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: April 26, 2022
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Xuewei Wu, Tong Wang, Boyu Dong, Jun Zhang, Bingliang Guo, Jun Wang, Henan Zhang, Baogang Xu, Huaichao Ma, Shaohui Liu, Kangning Zhao, Yujie Geng, Qingxuan Wang, Yaxin Cui
  • Patent number: 10984994
    Abstract: The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.
    Type: Grant
    Filed: October 9, 2016
    Date of Patent: April 20, 2021
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Jun Zhang, Boyu Dong, Jinrong Zhao, Xuewei Wu, Bingliang Guo, Baogang Xu, Henan Zhang, Tong Wang, Shaohui Liu, Jun Wang
  • Patent number: 10937672
    Abstract: A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: March 2, 2021
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Jun Zhang, Xuewei Wu, Boyu Dong, Baogang Xu, Henan Zhang, Bingliang Guo, Wen Zhang, Shaohui Liu
  • Publication number: 20210040605
    Abstract: A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.
    Type: Application
    Filed: October 20, 2020
    Publication date: February 11, 2021
    Inventors: Bingliang GUO, Huaichao MA, Andong SUN, Henan ZHANG, Boyu DONG, Lu ZHANG, Yujing CHEN
  • Publication number: 20200144035
    Abstract: The present disclosure provides a loading apparatus and a physical vapor deposition (PVD) apparatus. The loading apparatus includes a pedestal configured to support a workpiece; and a first support member placed on the pedestal and configured to push up a cover ring when the pedestal is at an operation position to prevent an overlapping portion of a cover ring and the workpiece from contacting each other. In the loading apparatus and the PVD apparatus, the first support member supports the cover ring, such that the cover ring does not contact the workpiece, thereby reducing stress forces on the workpiece by external components.
    Type: Application
    Filed: June 15, 2018
    Publication date: May 7, 2020
    Inventors: Xuewei WU, Tong WANG, Boyu DONG, Jun ZHANG, Bingliang GUO, Jun WANG, Henan ZHANG, Baogang XU, Huaichao MA, Shaohui LIU, Kangning ZHAO, Yujie GENG, Qingxuan WANG, Yaxin CUI
  • Patent number: 10640862
    Abstract: The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.
    Type: Grant
    Filed: September 27, 2016
    Date of Patent: May 5, 2020
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Jun Wang, Boyu Dong, Bingliang Guo, Yujie Geng, Huaichao Ma
  • Patent number: 10643843
    Abstract: The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: May 5, 2020
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Jun Wang, Boyu Dong, Bingliang Guo, Yujie Geng, Huaichao Ma
  • Publication number: 20180247799
    Abstract: The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.
    Type: Application
    Filed: October 9, 2016
    Publication date: August 30, 2018
    Inventors: Jun ZHANG, Boyu DONG, Jinrong ZHAO, Xuewei WU, Bingliang GUO, Baogang XU, Henan ZHANG, Tong WANG, Shaohui LIU, Jun WANG
  • Publication number: 20180230586
    Abstract: The present disclosure provides a method for forming a film and a method for forming an aluminum nitride film, in which two steps of pre-sputtering having different process parameters are respectively performed before performing a main sputtering, so as to achieve the effect of stabilizing target condition. The method for forming a film of the present disclosure may also form an aluminum nitride film on a substrate, and the aluminum nitride film may serve as a buffer layer between a substrate and a gallium nitride layer in an electronic device, so as to improve film qualities of the aluminum nitride film and the gallium nitride layer and achieve the purpose of improving performance of the electronic device.
    Type: Application
    Filed: September 27, 2016
    Publication date: August 16, 2018
    Inventors: Jun WANG, Boyu DONG, Bingliang GUO, Yujie GENG, Huaichao MA
  • Publication number: 20170365493
    Abstract: A heating device and a heating chamber are provided, comprising a base plate (21), at least three supporting columns (22) and a heating assembly, where the at least three supporting columns are arranged vertically on the base plate and are distributed at intervals along a circumferential direction of the base plate Top ends of the at least three supporting columns form a bearing surface for supporting a to-be-heated member (23). The heating assembly includes a heating light tube (24) and a thermal radiation shielding assembly, where the heating light tube is disposed above the base plate and below the bearing surface. A projection of an effective heating area formed by uniform distribution of the heating light tube on the base plate covers a projection of the bearing surface on the base plate. The thermal radiation shielding assembly shields heat radiated by the heating light tube towards surroundings and bottom.
    Type: Application
    Filed: December 30, 2015
    Publication date: December 21, 2017
    Inventors: Jun ZHANG, Xuewei WU, Boyu DONG, Baogang XU, Henan ZHANG, Bingliang GUO, Wen ZHANG, Shaohui LIU
  • Publication number: 20170365466
    Abstract: The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.
    Type: Application
    Filed: August 30, 2017
    Publication date: December 21, 2017
    Inventors: Jun WANG, Boyu DONG, Bingliang GUO, Yujie GENG, Huaichao MA