Abstract: The application discloses a preparation method of monocrystal uranium dioxide nuclear fuel pellets, comprising: granulating and pelleting UO2 powder to obtain UO2 pellets; then coating surfaces of the UO2 pellets with monocrystal growth additive micro powder to form core-shell structure particles; and activated-sintering the core-shell structure particles at high temperature, liquefying the monocrystal growth additive on the surface of the core-shell structure particle at high temperature and then diffusing into UO2 pellets, dissolving the UO3 in the liquid monocrystal growth additive, and recrystallizing the UO2 to form the monocrystal UO2 nuclear fuel pellets.

Abstract: The application discloses a preparation method of monocrystal uranium dioxide nuclear fuel pellets, comprising: granulating and pelleting UO2 powder to obtain UO2 pellets; then coating surfaces of the UO2 pellets with monocrystal growth additive micro powder to form core-shell structure particles; and activated-sintering the core-shell structure particles at high temperature, liquefying the monocrystal growth additive on the surface of the core-shell structure particle at high temperature and then diffusing into UO2 pellets, dissolving the UO3 in the liquid monocrystal growth additive, and recrystallizing the UO2 to form the monocrystal UO2 nuclear fuel pellets.

Abstract: A measurement target for a semiconductor device is designed. The semiconductor device includes a structure to be measured that has a spectrum response that is comparable to or below system noise level for an optical critical dimension measurement device to be used to measure the structure. The measurement target is designed by obtaining a process window and design rules for the semiconductor device and determining prospective pitches through modeling to identify pitches that produce a spectrum response from the structures that is at least 10 times greater than a system noise level for the optical critical dimension measurement device. A resonance window for each prospective pitch is determined and robustness of the resonance window is determined through modeling. Pitches of the array are selected based on the prospective pitches, resonance windows, and robustness. The target design may accordingly be produced and used to generate a measurement target.

Abstract: A measurement target for a semiconductor device is designed. The semiconductor device includes a structure to be measured that has a spectrum response that is comparable to or below system noise level for an optical critical dimension measurement device to be used to measure the structure. The measurement target is designed by obtaining a process window and design rules for the semiconductor device and determining prospective pitches through modeling to identify pitches that produce a spectrum response from the structures that is at least 10 times greater than a system noise level for the optical critical dimension measurement device. A resonance window for each prospective pitch is determined and robustness of the resonance window is determined through modeling. Pitches of the array are selected based on the prospective pitches, resonance windows, and robustness. The target design may accordingly be produced and used to generate a measurement target.