Abstract: A LCD backlight with mosaic structure is provided. Each of the backlight unit blocks comprises light sources, light guide plate, electric controlling circuitry and mechanical interfacing features.

Abstract: A system and drive method for compensating intensity variation due to variation of operating cycles in a dynamically controlled system comprising a plurality of light emitting devices are provided in this invention.

Abstract: Structure for polarized light source suitable for the application of flat panel display is provided.

Abstract: A GaN based LED comprises: a three layer buffer which is a template for growth of a high quality I GaN platform for quality growth of subsequent layers; a light emitting structure; and complementary N and P electrode structures which spread current flowing between the electrodes fully across the light emitting structure.

Abstract: Metal bases and window caps are used for semiconductor laser diode transistor-outline (TO) type packages and the like. New types of metal bases and window caps are disclosed. Tapered metal bases of the present invention works with tapered window caps of the present invention to function as a self-alignment mechanism of them, which is especially important for the ball lens window caps. The self-aligned tapered metal bases and tapered window caps provide a more productive (high yield), cost effective, and accurate means to manufacture semiconductor laser diode packages, which is a key factor for high-speed semiconductor laser diode application. The top surface of a metal base of the present invention has at least two fiducial marks designed to serve as the reference for the process automatic equipment to search and define the center of the metal base. These references will improve the accuracy of process equipment placing the laser diode chip and/or dispensing adhesive.

Abstract: A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.

Abstract: A Gallium Nitride based Light Emitting Diode (LED) includes both a transparent substrate and a window for exiting light generated by the LED. Useful amounts of light may be utilized at the face of the window or at the face of the transparent substrate. An external optical reflector is formed directly on the external face of the LED which is not currently being used to exit useful light. If light from the window is being utilized, a Distributed Bragg Reflector (DBR) is formed directly on the “backside” of the substrate. However, if light through the substrate is being utilized, a Distributed Bragg Reflector is formed directly on the light emitting portion of the window.

Abstract: A light-emitting diode (LED) constructed of AlGaInP compounds includes a multi-layer window having, in the order of formation, a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium/gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Schottky diode connection with the first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.

Abstract: A window structure for Gallium Nitride based Light Emitting Diode comprises: an Mg+ doped P window layer of a GaN compound; a thin semitransparent metal contact layer; an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx\Au; and the current spreading layer is formed of Indium Tin Oxide. The P electrode of the diode comprises a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Shottky diode connection with the Mg+ doped window layer.

Abstract: A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium\gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.

Abstract: A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer formed of Indium Tin Oxide (ITO), and a titanium\gold contact. In one embodiment, the contact forms ohmic connections with the second and third layers; and a Shottky diode connection with first layer. In a second embodiment, the contact forms an ohmic connection with the third layer; and is insulated from direct contact with the first layer.

Abstract: A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.

Abstract: A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.