Patents by Inventor Bingxu LIU

Bingxu LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11961934
    Abstract: In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.
    Type: Grant
    Filed: June 9, 2021
    Date of Patent: April 16, 2024
    Assignee: UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING
    Inventors: Yinghui Sun, Bingxu Liu, Rongming Wang
  • Publication number: 20240104262
    Abstract: A method for scaling a vehicle crash dummy model, includes: obtaining a height ratio, a girth ratio, and a mass ratio of each part of a body shape of a target population to a reference population; calculating part scaling ratios of the target population to the reference population in a height direction and each direction in a girth plane according to the height ratio, the girth ratio, and the mass ratio; scaling simulation models of each part of a dummy simulation model of the reference population according to each scaling ratio; and assembling scaled models of each part, to obtain a dummy simulation model of the target population. This embodiment improves a shape simulation degree for a real human body of a dummy.
    Type: Application
    Filed: March 27, 2023
    Publication date: March 28, 2024
    Applicants: CHINA AUTOMOTIVE TECHNOLOGY AND RESEARCH CENTER CO., LTD, CATARC AUTOMOTIVE TEST CENTER (TIANJIN) CO., LTD
    Inventors: Zhixin LIU, Zhixin WU, Weidong LIU, Hong ZHENG, Kai WANG, Hong CHEN, Bingxu DUAN, Hanxiao ZHANG
  • Publication number: 20220005967
    Abstract: In the field of photoelectric devices, a visible light detector is provided with high-photoresponse based on a TiO2/MoS2 heterojunction and a preparation method thereof. The detector, based on a back-gated field-effect transistor based on MoS2, includes a MoS2 channel, a TiO2 modification layer, a SiO2 dielectric layer, Au source/drain electrodes and a Si gate electrode, The TiO2 modification layer is modified on the surface of the MoS2 channel. By employing micromechanical exfoliation and site-specific transfer of electrodes, the method is intended to prepare a detector by constructing a back-gated few-layer field-effect transistor based on MoS2, depositing Ti on the channel surface, and natural oxidation.
    Type: Application
    Filed: June 9, 2021
    Publication date: January 6, 2022
    Applicant: UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING
    Inventors: Yinghui SUN, Bingxu LIU, Rongming WANG