Patents by Inventor Bingyong Yan

Bingyong Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8369054
    Abstract: A power-to-ground clamp transistor provides electrostatic discharge (ESD) protection. A filter capacitor and resistor generate a filter voltage that is buffered by three stages to drive the gate of the clamp transistor. The filter capacitor is about twenty times smaller than in a conventional clamp circuit. Feedback in the circuit keeps the clamp transistor turned on after the R-C time constant of the capacitor and resistor in the filer has elapsed, allowing for a smaller capacitor to turn on the clamp transistor longer. A sub-threshold-conducting transistor in the first stage conducts only a small sub-threshold current, which extends the discharge time of the first stage. The gate of the sub-threshold-conducting transistor is driven by feedback from the second stage. A feed-forward resistor has a high resistance value to slowly raise the voltage of the second stage from the filter voltage, and thus slowly raise the gate of the sub-threshold-conducting transistor.
    Type: Grant
    Filed: June 8, 2010
    Date of Patent: February 5, 2013
    Assignee: Hong Kong Applied Science and Technology Research Institute Co., Ltd.
    Inventors: Xiaowu Cai, Beiping Yan, Xiaoyang Du, Xiao Huo, Xiaoyong Han, Bingyong Yan
  • Publication number: 20110299202
    Abstract: A power-to-ground clamp transistor provides electrostatic discharge (ESD) protection. A filter capacitor and resistor generate a filter voltage that is buffered by three stages to drive the gate of the clamp transistor. The filter capacitor is about twenty times smaller than in a conventional clamp circuit. Feedback in the circuit keeps the clamp transistor turned on after the R-C time constant of the capacitor and resistor in the filer has elapsed, allowing for a smaller capacitor to turn on the clamp transistor longer. A sub-threshold-conducting transistor in the first stage conducts only a small sub-threshold current, which extends the discharge time of the first stage. The gate of the sub-threshold-conducting transistor is driven by feedback from the second stage. A feed-forward resistor has a high resistance value to slowly raise the voltage of the second stage from the filter voltage, and thus slowly raise the gate of the sub-threshold-conducting transistor.
    Type: Application
    Filed: June 8, 2010
    Publication date: December 8, 2011
    Applicant: Hong Kong Applied Science & Technology Research Institute Company Limited
    Inventors: Xaiowu CAI, Beiping YAN, Xiaoyang DU, Xiao HUO, Xiaoyong HAN, Bingyong YAN