Abstract: Implementations of semiconductor packages may include: a wafer having a first side and a second side, a solder pad coupled to the first side of the wafer, a through silicon via (TSV) extending from the second side of the wafer to the solder pad a metal layer around the walls of the TSV, and a low melting temperature solder in the TSV. The low melting temperature solder may also be coupled to the metal layer. The low melting temperature solder may couple to the solder pad through an opening in a base layer metal of the solder pad.

Abstract: Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.

Abstract: Implementations of semiconductor packages may include: a wafer having a first side and a second side, a solder pad coupled to the first side of the wafer, a through silicon via (TSV) extending from the second side of the wafer to the solder pad a metal layer around the walls of the TSV, and a low melting temperature solder in the TSV. The low melting temperature solder may also be coupled to the metal layer. The low melting temperature solder may couple to the solder pad through an opening in a base layer metal of the solder pad.

Abstract: Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.

Abstract: Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.

Abstract: Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.

Abstract: Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.

Abstract: Passive thermal stabilization of a wavelength monitor includes shielding a wavelength dependent filter of the wavelength monitor from ambient cavity temperatures with portions extending from a submount supporting detectors for the wavelength monitor. The portions and the submount may constitute a single piece, or may be multiple pieces. The shield covers at least one surface of the wavelength dependent filter. The shield may include electrical interconnections for the detectors. A temperature detector may be provided on the submount or the shield portions. The submount or shield portions may be modeled and/or designed to have a section that tracks the thermal response of the wavelength dependent filter and the temperature detector may be mounted on that section.

Abstract: Passive thermal stabilization of a wavelength monitor includes shielding a wavelength dependent filter of the wavelength monitor from ambient cavity temperatures with portions extending from a submount supporting detectors for the wavelength monitor. The portions and the submount may constitute a single piece, or may be multiple pieces. The shield covers at least one surface of the wavelength dependent filter. The shield may include electrical interconnections for the detectors. A temperature detector may be provided on the submount or the shield portions. The submount or shield portions may be modeled and/or designed to have a section that tracks the thermal response of the wavelength dependent filter and the temperature detector may be mounted on that section.