Patents by Inventor Binh Lee

Binh Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Partial speed and full speed programming for non-volatile memory using floating bit lines
    Patent number: 8081514
    Abstract: Partial speed and full speed programming are achieved for a non-volatile memory system. During a program operation, in a first time period, bit lines of storage elements to be inhibited are pre-charged, while bit line of storage elements to be programmed at a partial speed and bit lines of storage elements to be programmed at a full speed are fixed. In a second time period, the bit lines of storage elements to be programmed at the partial speed are driven higher, while the bit lines of storage elements to be inhibited are floated and the bit line of storage elements to be programmed remain fixed. In a third time period, the bit lines of storage elements to be inhibited are driven higher while the bit lines of the storage elements to be programmed at the partial speed or the full speed are floated so that they couple higher.
    Type: Grant
    Filed: August 25, 2009
    Date of Patent: December 20, 2011
    Assignee: SanDisk Technologies Inc.
    Inventors: Man Mui, Yingda Dong, Binh Lee, Deepanshu Dutta