Abstract: A Landline Texting Engine associates a proxy telephone number with a select landline telephone number for forwarding incoming calls intended for the select landline telephone number to the proxy telephone number. The Landline Texting Engine intercepts a forwarded incoming call. The Landline Texting Engine detects incoming voice data in the forwarded incoming call. In response to detecting the incoming voice data, the Landline Texting Engine sends text data on behalf of the select landline telephone number from the proxy telephone number, the text data identified as being sent from the select landline telephone number.

Abstract: A non-volatile programmable bitcell has a read enable device with a source coupled with a bitline, an anti-fuse device with a gate coupled with a first write line, a drain coupled with a supply voltage and a source coupled with a drain of the read enable device. The bitcell has a fuse device coupled between a second write line and the drain of the read enable device. A magnitude of current flowing in the bitline, when the read enable device is enabled for reading, is dependent both on (1) a voltage level applied to the first write line and anti-fuse device state and on (2) a voltage level applied to the second write line and fuse device state. Usages include in a memory array, such as for FPGA configuration memory. The bitcell can be used as a multi-time programmable element, or to store multiple bit values.

Abstract: A language learning assembly includes a body having at least one first recess and at least one second recess arranged parallel to the at least one first recess. A plurality of blocks are color-coded by syntax category or “parts of speech” and have a plurality of words displayed on each block. The blocks are sized to fit side-by-side within one of the at least one first recess and the at least one second recess to form grammatically correct sentences. Each block can have a different word on at least two faces thereof. Some of the blocks can be configured to display words in a fixed fashion. Some of the blocks can have electronic displays configured to display words electronically.

Abstract: A language learning assembly includes a body having at least one first recess and at least one second recess arranged parallel to the at least one first recess. A plurality of blocks are color-coded by syntax category or “parts of speech” and have a plurality of words displayed on each block. The blocks are sized to fit side-by-side within one of the at least one first recess and the at least one second recess to form grammatically correct sentences. Each block can have a different word on at least two faces thereof. Some of the blocks can be configured to display words in a fixed fashion. Some of the blocks can have electronic displays configured to display words electronically.

Abstract: A Landline Texting Engine associates a proxy telephone number with a select landline telephone number for forwarding incoming calls intended for the select landline telephone number to the proxy telephone number. The Landline Texting Engine intercepts a forwarded incoming call. The Landline Texting Engine detects incoming voice data in the forwarded incoming call. In response to detecting the incoming voice data, the Landline Texting Engine sends text data on behalf of the select landline telephone number from the proxy telephone number, the text data identified as being sent from the select landline telephone number.

Abstract: A non-volatile programmable bitcell has a read enable device with a source coupled with a bitline, an anti-fuse device with a gate coupled with a first write line, a drain coupled with a supply voltage and a source coupled with a drain of the read enable device. The bitcell has a fuse device coupled between a second write line and the drain of the read enable device. A magnitude of current flowing in the bitline, when the read enable device is enabled for reading, is dependent both on (1) a voltage level applied to the first write line and anti-fuse device state and on (2) a voltage level applied to the second write line and fuse device state. Usages include in a memory array, such as for FPGA configuration memory. The bitcell can be used as a multi-time programmable element, or to store multiple bit values.

Abstract: A non-volatile programmable bitcell has a read enable device with a source coupled with a bitline, an anti-fuse device with a gate coupled with a first write line, a drain coupled with a supply voltage and a source coupled with a drain of the read enable device. The bitcell has a fuse device coupled between a second write line and the drain of the read enable device. A magnitude of current flowing in the bitline, when the read enable device is enabled for reading, is dependent both on (1) a voltage level applied to the first write line and anti-fuse device state and on (2) a voltage level applied to the second write line and fuse device state. Usages include in a memory array, such as for FPGA configuration memory. The bitcell can be used as a multi-time programmable element, or to store multiple bit values.

Abstract: A non-volatile programmable bitcell has a read enable device with a source coupled with a bitline, an anti-fuse device with a gate coupled with a first write line, a drain coupled with a supply voltage and a source coupled with a drain of the read enable device. The bitcell has a fuse device coupled between a second write line and the drain of the read enable device. A magnitude of current flowing in the bitline, when the read enable device is enabled for reading, is dependent both on (1) a voltage level applied to the first write line and anti-fuse device state and on (2) a voltage level applied to the second write line and fuse device state. Usages include in a memory array, such as for FPGA configuration memory. The bitcell can be used as a multi-time programmable element, or to store multiple bit values.

Abstract: A semiconductor fabrication process allows for the fabrication of high-voltage transistors, logic transistors, and memory cells where, as required for sub-0.3 micron device geometries, the gate oxide of the logic transistors is thinner than the tunnel oxide thickness of the non-volatile memory cells without the undesirable contamination of the gate oxide of the logic transistors or contamination of the tunnel oxide of the memory cells. In one embodiment, the tunnel oxide of the memory cells is grown to a desired thickness. In a next step, a layer of doped polysilicon which will serve as the floating gate of the memory cell(s) is immediately deposited over the tunnel oxide of the memory cells, thereby protecting the tunnel oxide from contamination in subsequent masking and etching steps. The gate oxide of the logic transistors and the gate oxide of the high-voltage transistors are then grown to a desired thickness.