Abstract: Past payment thresholds of a payment account are received. A first data sequence is determined by applying a differential operation to the past payment thresholds. A second data sequence is determined by processing the first data sequence. A payment threshold change rule is determined based on the second data sequence. The payment threshold change rule is applied before completing a fund transaction service for the payment account to mitigate the risk of the payment account.

Abstract: A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re3Al5O12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure.

Abstract: A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped Re3Al5O12 substrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure.