Patents by Inventor Binneng Wu

Binneng Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8809955
    Abstract: Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects.
    Type: Grant
    Filed: April 26, 2011
    Date of Patent: August 19, 2014
    Assignee: Institute of Microelectronics, Chinese Academy of Sciences
    Inventors: Huilong Zhu, Binneng Wu, Weiping Xiao, Hao Wu, Qingqing Liang
  • Publication number: 20120267725
    Abstract: Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects.
    Type: Application
    Filed: April 26, 2011
    Publication date: October 25, 2012
    Inventors: Huilong Zhu, Binneng Wu, Weiping Xiao, Hao Wu, Qingqing Liang