Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

Abstract: A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

Abstract: Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

Abstract: An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

Abstract: A method for inspecting a manufactured product includes applying a first test regimen to the manufactured product to identify product defects. The first test regimen produces a first set of defect candidates. The method further includes applying a second test regimen to the manufactured product to identify product defects. The second test regimen produces a second set of defect candidates, and the second test regimen is different from the first test regimen. The method also includes generating a first filtered defect set by eliminating ones of the first set of defect candidates that are not identified in the second set of defect candidates.

Abstract: A method for inspecting a manufactured product includes applying a first test regimen to the manufactured product to identify product defects. The first test regimen produces a first set of defect candidates. The method further includes applying a second test regimen to the manufactured product to identify product defects. The second test regimen produces a second set of defect candidates, and the second test regimen is different from the first test regimen. The method also includes generating a first filtered defect set by eliminating ones of the first set of defect candidates that are not indentified in the second set of defect candidates.

Abstract: A method for inspecting a manufactured product includes applying a first test regimen to the manufactured product to identify product defects. The first test regimen produces a first set of defect candidates. The method further includes applying a second test regimen to the manufactured product to identify product defects. The second test regimen produces a second set of defect candidates, and the second test regimen is different from the first test regimen. The method also includes generating a first filtered defect set by eliminating ones of the first set of defect candidates that are not indentified in the second set of defect candidates.

Abstract: The present disclosure provides a method of inspecting a photolithographic mask wherein a design database is received, and a feature of the design database is adjusted by a bias factor to produce a biased database. Image rendering is performed on the biased database to produce a biased image. A mask is also created using the design database, and the mask is imaged to produce a mask image. The biased image is compared to the mask image, and a new value for the bias factor may be determined based on the comparison.

Abstract: A method of forming a standard mask for an inspection system is provided, the method comprising providing a substrate within a chamber, and providing a tetraethylorthosilicate (TEOS) precursor within the chamber. The method further includes reacting the TEOS precursor with an electron beam to form silicon oxide particles of controlled size at one or more controlled locations on the substrate, the silicon oxide particles disposed as simulated contamination defects.

Abstract: A method of forming a standard mask for an inspection system is provided, the method comprising providing a substrate within a chamber, and providing a tetraethylorthosilicate (TEOS) precursor within the chamber. The method further includes reacting the TEOS precursor with an electron beam to form silicon oxide particles of controlled size at one or more controlled locations on the substrate, the silicon oxide particles disposed as simulated contamination defects.

Abstract: A method for inspecting a manufactured product includes applying a first test regimen to the manufactured product to identify product defects. The first test regimen produces a first set of defect candidates. The method further includes applying a second test regimen to the manufactured product to identify product defects. The second test regimen produces a second set of defect candidates, and the second test regimen is different from the first test regimen. The method also includes generating a first filtered defect set by eliminating ones of the first set of defect candidates that are not indentified in the second set of defect candidates.

Abstract: The present disclosure provides a method of inspecting a photolithographic mask wherein a design database is received, and a feature of the design database is adjusted by a bias factor to produce a biased database. Image rendering is performed on the biased database to produce a biased image. A mask is also created using the design database, and the mask is imaged to produce a mask image. The biased image is compared to the mask image, and a new value for the bias factor may be determined based on the comparison.