Abstract: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

Abstract: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

Abstract: A corrosion resistant coating for semiconductor process equipment and methods of making corrosion resistant coatings for semiconductor process equipment are provided herein. In some embodiments, a method of treating a semiconductor processing chamber component, includes: anodizing a semiconductor processing chamber component comprising an aluminum containing body in an anodizing solution comprising a neutral electrolyte and a resistive material to form a corrosion resistant coating atop the aluminum containing body. In some embodiments, a method of treating a semiconductor processing chamber component, includes: anodizing a semiconductor processing chamber component comprising an aluminum containing body in a neutral electrolyte solution to form an aluminum oxide layer on a surface of the aluminum containing body; and dipping the anodized semiconductor processing chamber component in a resistive material solution to form a resistive material layer atop the aluminum oxide layer.

Abstract: Embodiments of the disclosure generally relate to methods for removal of accumulated process byproducts from components of a semiconductor processing chamber. In one embodiment of the disclosure, a method for cleaning components within a processing chamber is disclosed. The method includes heating the components within the processing chamber to a temperature between about 150-300 degrees Celsius, exposing the components of the chamber to one or more precursor gases and removing a product of a reaction between a fluorine-based compound disposed on the components and the one or more precursor gases. The one or more precursor gases include trimethyl aluminum or tin acetylacetonate.

Abstract: A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 ?m greater than a surface roughness of the component without the AlxOy film.

Abstract: The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

Abstract: The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

Abstract: The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes an aluminum body having an anodized coating disposed on the aluminum body formed from a neutral electrolyte solution, wherein the anodized coating has a film density higher than 3.1 g/cm?2.

Abstract: A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10° C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NH4OH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlxOy film having a thickness of 4 to 8 nm and a surface roughness less than 0.05 ?m greater than a surface roughness of the component without the AlxOy film.

Abstract: Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H2) to a filament disposed in a process chamber of the HWCVD tool for a first period of time; and flowing current through the filament to raise the temperature of the filament to a first temperature after the first period of time.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract: Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H2) to a filament disposed in a process chamber of the HWCVD tool for a first period of time; and flowing current through the filament to raise the temperature of the filament to a first temperature after the first period of time.

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.