Abstract: A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.

Abstract: A method for tuning a target apparatus of a patterning process. The method includes obtaining a reference performance, and measurement data of a substrate subjected to the patterning process at the target apparatus, the measurement data indicative of a performance of the target apparatus; determining a cause of a performance mismatch based on a difference between the reference performance and the performance of the target apparatus, wherein the cause includes an optical characteristic; and responsive to the cause, adjusting an optical parameter associated with an adjustable optical characteristic to reduce the performance mismatch in the optical characteristic.

Abstract: A higher-level controller can correct measured metrology data with residual error values as reported by a lower-level controller. This results in a more accurate process disturbance estimate. A method of control obtains, based on measurement sample definition, a first process variable of a system under control, determines a residual error using the first process variable and a first set point, controls the system using the residual error, obtains, based on the same sample definition, a second process variable, and adjusts the second process variable using the residual error. The method may also include determining, using the adjusted second process variable, one or more first set points for controlling the system by the low-level controller that may vary in correspondence with the sample definition.

Abstract: A method is described for obtaining information for use in modeling of a lithographic process. A pattern feature is formed on a target portion of a substrate by projecting a beam of radiation onto the target portion of the substrate. For that target portion the lithographic process is characterized by one or both of a first property that varies in a first direction along a surface of the substrate, and a second property that varies in a second direction along a surface of the substrate. A property of the pattern feature is measured. Using the measured property of the pattern feature and at least one of the first and second properties, information is obtained for use in modeling the process. The lithographic process may be or include the projection of the beam of radiation onto the surface of the substrate.

Abstract: A higher-level controller can correct measured metrology data with residual error values as reported by a lower-level controller. This results in a more accurate process disturbance estimate. A method of control obtains, based on measurement sample definition, a first process variable of a system under control, determines a residual error using the first process variable and a first set point, controls the system using the residual error, obtains, based on the same sample definition, a second process variable, and adjusts the second process variable using the residual error. The method may also include determining, using the adjusted second process variable, one or more first set points for controlling the system by the low-level controller that may vary in correspondence with the sample definition.

Abstract: A method is described for obtaining information for use in modeling of a lithographic process. A pattern feature is formed on a target portion of a substrate by projecting a beam of radiation onto the target portion of the substrate. For that target portion the lithographic process is characterized by one or both of a first property that varies in a first direction along a surface of the substrate, and a second property that varies in a second direction along a surface of the substrate. A property of the pattern feature is measured. Using the measured property of the pattern feature and at least one of the first and second properties, information is obtained for use in modeling the process. The lithographic process may be or include the projection of the beam of radiation onto the surface of the substrate.