Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.

Abstract: In one embodiment, a reflowable layer 51 is deposited over a semiconductor device 10 and reflowed in an environment having a pressure approximately equal to that of atmosphere to form a seal layer 52. The seal layer 52 seals all openings 43 in the underlying layer of the semiconductor device 10. Since the reflow is performed at approximately atmospheric pressure a gap 50 which was coupled to the opening 43 is sealed at approximately atmospheric pressure, which is desirable for the semiconductor device 10 to avoid oscillation. The seal layer 52 is also desirable because it prevents particles from entering the gap 50. In another embodiment, the seal layer 52 is deposited in an environment having a pressure approximately equal to atmospheric pressure to seal the hole 43 without a reflow being performed.

Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method to form a semiconductor structure includes removing a portion of a semiconductor material to form one or more suspended structures and a cavity, the cavity having a boundary that is below a surface of the semiconductor material and wherein the one or more suspended structures extend from the surface into the cavity. The method further includes altering the one or more suspended structures to form one or more altered suspended structures and forming a material over the one or more altered suspended structures and in a region between the one or more altered suspended structures. Other embodiments are described and claimed.

Abstract: A circuit includes a micro electro mechanical switch and a detection circuit. The micro electro mechanical switch has a movable portion positioned to form an electrical connection between a first electrical contact and a second electrical contact in response to an electrostatic force provided by a top activation electrode and a bottom activation electrode. The detection circuit is electrically coupled to the top and bottom activation electrodes and is for detecting a first capacitance value between the top and bottom activation electrodes when the movable portion is in a first position and for detecting a second capacitance value when the movable portion is in a second position. By detecting a change in the capacitance, it can be determined if the switch is open or closed.

Abstract: A microelectronic assembly and a method for forming the same are provided. The method includes forming first and second lateral etch stop walls (44, 46) in a semiconductor substrate (20) having first and second opposing surfaces (22, 24). An inductor (56) is formed on the first surface (22) of the semiconductor substrate (20) and a hole (60) is formed through the second surface (24) of the substrate (20) to expose the substrate (20) between the first and second lateral etch stop walls (44, 46). The substrate (20) is isotropically etched between the first and second lateral etch stop walls (44, 46) through the etch hole (60) to create a cavity 62) within the semiconductor substrate (20). A sealing layer (70) is formed over the etch hole (60) to seal the cavity (62).

Abstract: A microelectronic assembly and a method for forming the same are provided. The method includes forming first and second lateral etch stop walls in a semiconductor substrate having first and second opposing surfaces. An inductor is formed on the first surface of the semiconductor substrate and a hole is formed through the second surface of the substrate to expose the substrate between the first and second lateral etch stop walls. The substrate is isotropically etched between the first and second lateral etch stop walls through the etch hole to create a cavity within the semiconductor substrate. A sealing layer is formed over the etch hole to seal the cavity.

Abstract: Methods have been provided for forming both wide and narrow trenches on a high-aspect ratio microelectromechanical (MEM) device on a substrate including a substrate layer (126), an active layer (128), and a first sacrificial layer (130) disposed at least partially therebetween. The method includes the steps of forming a first trench (154), a second trench (156), and a third trench (152) in the active layer (128), each trench (154, 156, 152) having an opening and sidewalls defining substantially equal first trench widths, depositing oxide and sacrificial layers thereover and removing the oxide and sacrificial layers to expose the third trench (152) and form a fourth trench (190) in the active layer (128) from the first and the second trench (154, 156), the fourth trench (190) having sidewalls defining a second trench width that is greater than the first trench width.

Abstract: A circuit includes a micro electro mechanical switch and a detection circuit. The micro electro mechanical switch has a movable portion positioned to form an electrical connection between a first electrical contact and a second electrical contact in response to an electrostatic force provided by a top activation electrode and a bottom activation electrode. The detection circuit is electrically coupled to the top and bottom activation electrodes and is for detecting a first capacitance value between the top and bottom activation electrodes when the movable portion is in a first position and for detecting a second capacitance value when the movable portion is in a second position. By detecting a change in the capacitance, it can be determined if the switch is open or closed.

Abstract: According to one aspect of the present invention, a method is provided for forming a microelectronic assembly. The method comprises forming first and second trenches on a semiconductor substrate, filling the first and second trenches with an etch stop material, forming an inductor on the semiconductor substrate, forming an etch hole in at least one of the etch stop layer and the semiconductor substrate to expose the substrate between the first and second trenches, isotropically etching the substrate between the first and second trenches through the etch hole to create a cavity within the substrate, and forming a sealing layer over the etch hole to seal the cavity.

Abstract: A microelectromechanical (MEM) device includes a substrate, a structure, a travel stop, and a protective cap. The substrate has a surface, and the structure is coupled to, and movably suspended above, the substrate surface. The structure has at least an outer surface, and the travel stop coupled to the structure outer surface and movable therewith. The travel stop includes at least an inner peripheral surface that defines a cavity. The protective cap is coupled to the substrate and includes a stop section that is disposed at least partially within the travel stop cavity and is spaced apart from the travel stop inner peripheral surface. The travel stop and the protective cap stop section together limit movement of the structure in at least three orthogonal axes.

Abstract: Methods and apparatus are provided forming a plurality of semiconductor devices on a single substrate, and sealing two or more of the devices at different pressures. First and second semiconductor devices, each having a cavity formed therein, are formed on the same substrate. The cavity in the first device is sealed at a first pressure, and the cavity in the second device is sealed at a second pressure.

Abstract: A micro-electromechanical (MEM) device has a folded tether spring in which each fold of the spring is surrounded by a rigidly fixed inner structure and outer structure. The fixed inner structure increases restoring force of the spring. The rigidly fixed inner and outer structures each have a major surface that include a plurality of notches of fixed width relative to a distance between the major surface and the spring. Additionally in one form extensions from the major surface of the rigidly fixed inner and outer structures are provided at distal ends thereof to make initial contact with the spring. The notches of the MEM device both reduce surface area contact with the spring and wick moisture away from the spring to minimize stiction.

Abstract: A MEMS sensor packaged with an integrated circuit includes switches and control circuitry. In a test mode, the control circuitry causes the switches to turn off and on such that the first and second capacitance of the MEMS sensor can be monitored individually. During a normal mode of operation, the switches are maintained such that the MEMS sensor packaged with the integrated circuit operates to produce a filtered and trimmed output reflecting the sensed phenomena.

Abstract: A MEMS sensor packaged with an integrated circuit includes switches and control circuitry. In a test mode, the control circuitry causes the switches to turn off and on such that the first and second capacitance of the MEMS sensor can be monitored individually. During a normal mode of operation, the switches are maintained such that the MEMS sensor packaged with the integrated circuit operates to produce a filtered and trimmed output reflecting the sensed phenomena.

Abstract: A capacitive pressure sensor (10) utilizes a diaphragm (38) that is formed along with forming gates (56,57) of active devices on the same semiconductor substrate (11).

Abstract: A method of manufacturing an electronic component includes forming first, second, and third capacitors (260, 270, 280) and electrically testing the first, second, and third capacitors to characterize an etch process for a sacrificial layer. Each of the first, second, and third capacitors has different amounts of first and second electrically insulative materials.

Abstract: A semiconductor component comprises a substrate (101), a two flexible pressure sensor diaphragms (106, 303) supported by the substrate (101), and a fixed electrode (203) between the two diaphragms (106, 303). The two diaphragms (106, 303) and the fixed electrode (203) are electrodes of two differential capacitors. The substrate (101) has a hole (601) extending from one surface (107) of the substrate (101) to an opposite surface (108) of the substrate (101). The hole (601) is located underneath the two diaphragms (106, 303), and the hole (601) at the opposite surfaces (107, 108) of the substrate (101) is preferably larger than the hole (601) at an interior portion of the substrate (101).