Patents by Inventor Bivas Saha

Bivas Saha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Titanium nitride based metamaterial
    Patent number: 9784888
    Abstract: A titanium nitride-based metamaterial, and method for producing the same, is disclosed, consisting of ultrathin, smooth, and alternating layers of a plasmonic titanium nitride (TiN) material and a dielectric material, grown on a substrate to form a superlattice. The dielectric material is made of A1-xScxN, where ‘x’ ranges in value from 0.2 to 0.4. The layers of alternating material have sharp interfaces, and each layer can range from 1-20 nanometers in thickness. Metamaterials based on titanium TiN, a novel plasmonic building block, have many applications including, but not ‘limited to emission enhancers, computer security, etc. The use of nitrogen vacancy centers in diamond, and light emitting diode (LED) efficiency enhancement is of particular interest.
    Type: Grant
    Filed: October 9, 2013
    Date of Patent: October 10, 2017
    Assignee: PURDUE RESEARCH FOUNDATION
    Inventors: Gururaj Naik, Bivas Saha, Timothy Sands, Vladimir Shalaev, Alexandra Boltasseva
  • TITANIUM NITRIDE BASED METAMATERIAL
    Publication number: 20150285953
    Abstract: A titanium nitride-based metamaterial, and method for producing the same, is disclosed, consisting of ultrathin, smooth, and alternating layers of a plasmonic titanium nitride (TiN) material and a dielectric material, grown on a substrate to form a superlattice. The dielectric material is made of A1-xScxN, where ‘x’ ranges in value from 0.2 to 0.4. The layers of alternating material have sharp interfaces, and each layer can range from 1-20 nanometers in thickness. Metamaterials based on titanium TiN, a novel plasmonic building block, have many applications including, but not ‘limited to emission enhancers, computer security, etc. The use of nitrogen vacancy centers in diamond, and light emitting diode (LED) efficiency enhancement is of particular interest.
    Type: Application
    Filed: October 9, 2013
    Publication date: October 8, 2015
    Applicant: Purdue Research Foundation
    Inventors: Gururaj Viveka Naik, Bivas Saha, Timothy D. Sands, Vladimir Shalaev, Alexandra Boltasseva