Abstract: The invention relates to an arrangement (1) for an antenna (16, 17) for generating or receiving terahertz radiation (12) comprising a photoactive layer (2) which can be activated by optical radiation (11) in the range 1200 nm to 1700 nm, a substrate (3) that is transparent to optical radiation (11) and to which the photoactive layer (2) is attached, a first adhesion-promoting layer (4), wherein the first adhesion-promoting layer (4) is arranged between the photoactive layer (2) and the substrate (3) and connects them to each other flat, wherein the first adhesion-promoting layer (4) has a layer thickness of no more than 5 ?m, and a carrier (5) transparent to the optical radiation (11), wherein the substrate (3) is attached to the carrier (5) and is arranged between the photoactive layer (2) and the carrier (5), wherein the substrate (3) and the carrier (5) are made of the same material.

Abstract: Receiving antenna (1) for terahertz radiation (30), comprising an antenna conductor (2) and a first photoconductor (3) connected to the antenna conductor (2) and activatable by light (9), the first photoconductor (3) allowing, in an activated state, an antenna current (28) flowing through the antenna conductor (2) and the first photoconductor (3), characterized in that the receiving antenna (1) comprises at least one second photoconductor (4) connected to the antenna conductor (2) and activatable by light (9), the second photoconductor connected in parallel with the first photoconductor (3) and, in an activated state, allowing an antenna current (28) flowing through the antenna conductor (2) and the second photoconductor (4), wherein at least one respective high-pass filter (8) is connected between each of the photoconductors (3, 4) and the antenna conductor (2).

Abstract: A terahertz transceiver, comprising at least a first and a second antenna, wherein the first and/or the second antenna is a dipole antenna comprising a dipole section, wherein the dipole section has a gap through which light can be radiated onto the photoconductive material, and wherein a first ending of the dipole section is connected to a first feedline and a second ending of the dipole section is connected to a second feedline, the feedlines (extending with an angle to the dipole section. The first and/or the second antenna has an asymmetric design, wherein a first section of at least one of the feedlines extending on one side of the dipole section is longer than a second section of the at least one feedline extending on the other side of the dipole section and/or at least one of the feedlines extends on one side of the dipole section, only.

Abstract: A terahertz transceiver, comprising at least a first and a second antenna, wherein the first and/or the second antenna is a dipole antenna comprising a dipole section, wherein the dipole section has a gap through which light can be radiated onto the photoconductive material, and wherein a first ending of the dipole section is connected to a first feedline and a second ending of the dipole section is connected to a second feedline, the feedlines (extending with an angle to the dipole section. The first and/or the second antenna has an asymmetric design, wherein a first section of at least one of the feedlines extending on one side of the dipole section is longer than a second section of the at least one feedline extending on the other side of the dipole section and/or at least one of the feedlines extends on one side of the dipole section, only.

Abstract: A photoconductor for emitting and/or receiving electromagnetic waves is provided. The photoconductor comprises a material region comprising a first and a second section, wherein the second section provides a higher density of charge carrier trapping centers and/or recombination centers than the first section, and a confinement generating a sub-band structure of the charge carrier energy states in the material region. The first and the second section are arranged and configured in such a manner that a maximum of the carrier probability density of the sub-band ground state is located in one of these sections and a maximum of the carrier probability density of an excited sub-band state is located in the respective other section.

Abstract: A terahertz antenna includes at least one photoconductive layer which generates charge carriers upon irradiation of light and two electroconductive antenna elements via which an electric field can be applied to at least one section of the photoconductive layer. The photoconductive layer being doped with a dopant in a concentration of at least 1×1018 cm?3, the dopant being a transition metal. The photoconductive layer is produced by molecular beam epitaxy at a growth temperature of at least 200° C. and not more than 500° C., the dopant being arranged in the photoconductive layer such that it produces a plurality of point defects.

Abstract: A terahertz antenna includes at least one photoconductive layer which generates charge carriers upon irradiation of light and two electroconductive antenna elements via which an electric field can be applied to at least one section of the photoconductive layer. The photoconductive layer being doped with a dopant in a concentration of at least 1×1018 cm?3, the dopant being a transition metal. The photoconductive layer is produced by molecular beam epitaxy at a growth temperature of at least 200° C. and not more than 500° C., the dopant being arranged in the photoconductive layer such that it produces a plurality of point defects.