Abstract: A lifting tool for replacing a battery pack in an electric vehicle is provided. A body has a lifting interface that is attachable to an external lifting aid. A first arm is provided with a first lifting arrangement and a second arm is provided with a second lifting arrangement, where the battery pack is adapted to be positioned between the arms when the lifting tool is to lift and hold a battery pack. The lifting tool includes locking pins adapted to be inserted horizontally through the lifting arrangements of the lifting tool and the lifting openings of the battery pack, such that the locking pins secure the battery pack to the lifting tool.

Abstract: An access node (100-A) of a cellular radio network controls switching of a further access node (100-B, 100-C) to an energy saving mode. Further, the access node (100-A) monitors energy consumption of the access node (100-A). Further, the access node (100-A) receives a report from the further access node (100-B, 100-C). The report indicates energy consumption of the further access node (100-B, 100-C). Based on the monitored energy consumption of the access node (100-A) and the indicated energy consumption of the further access node (100-B, 100-C), the access node (100-A) determines energy saving information representing energy saving associated with the switching of the further access node (100-B, 100-C) to the energy saving mode. The access node (100-A) may then send the energy saving information to a management node (150) of the cellular radio network.

Abstract: A technique for configuring a network element in a communication network is presented. A method aspect performed by a network element comprises receiving at least one configuration profile. The configuration profile defines a set of one or more parameters values for one or more associated configuration parameters of the network element as well as one or more activation conditions for the set of one or more parameter values. The network element then determines whether or not the one or more activation conditions for a particular configuration profile are fulfilled. In case the one or more activation conditions are fulfilled, it triggers activation of the parameter value set defined in the configuration profile for the one or more associated parameters.

Abstract: A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm?3 and a carrier lifetime of at least 50 ns.

Abstract: A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 ?m arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.

Abstract: A distance measuring measurement instrument and a method for such a station for scanning a surface or volume of an object are disclosed. The measurement instrument includes a position calculating circuit adapted to calculate position data including at least horizontal and vertical angle and distance between the measurement instrument and the object. A plurality of points in each of a number of subsets of a scanning area of the object during a measurement session and, at detection of a new point in the new subset, information related to at least one point having a corresponding location in at least one preceding subset is used, wherein the preceding subset being adjacent to the new subset.

Abstract: A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm?3 and a carrier lifetime of at least 50 ns.

Abstract: A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm?3, and a concentration of transition metals impurities less than 5×1014 cm?3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

Abstract: The present invention concerns a ballistic protection against objects such as projectiles from fire arms, alternatively scatter from for example hand grenades. The protection comprises an enclosure (1, 2, 4, 5, 6, 7, 9) adapted so that the object (10) can penetrate the enclosure (1, 2, 4, 5, 6, 7, 9) in at least one area (2); at least one intermediate layer (3) comprising granules (27) arranged within the enclosure (1, 2, 4, 5, 6, 7, 9), which intermediate layer (3) and enclosure (1, 2, 4, 5, 6, 7, 9) are arranged to decelerate said object (10).

Abstract: A distance measuring measurement instrument and a method for such a station for scanning a surface or volume of an object are disclosed. The measurement instrument includes a position calculating circuit adapted to calculate position data including at least horizontal and vertical angle and distance between the measurement instrument and the object. A plurality of points in each of a number of subsets of a scanning area of the object during a measurement session and, at detection of a new point in the new subset, information related to at least one point having a corresponding location in at least one preceding subset is used, wherein the preceding subset being adjacent to the new subset.

Abstract: An electro optic distance measurement apparatus using time of flight measurements and a method therefore are provided for determining a distance to a target of two or more targets located along a common line of sight from the distance measurement apparatus. Approximate distances to the two or more targets are determined by means of the distance measurement apparatus, one of the two or more targets is selected, and an accurate distance to the selected target is determined by means of the distance measurement apparatus.

Abstract: A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 ?m.

Abstract: A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm?3, and a concentration of transition metals impurities less than 5×1014 cm?3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

Abstract: A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm?3 and a carrier lifetime of at least 50 ns at room temperature.

Abstract: A method of authorizing a key or lock device comprises the following steps: a first user device and a first system device used in a first level of a lock system, such as at a manufacturer, are created. A first encryption key is stored in the first user device and the first system device. When the user device is to be shipped to a second level of the lock system, such as a locksmith, an authentication process is carried out between the first user device and the first system device using the first encryption key stored therein. In case the authentication process was successful, a software operation is carried out by the first system device, by which the first encryption key stored in the first user device is replaced by a second encryption key. This second encryption key is stored in second system and user devices used in the second level of the lock system, thereby making the first user device operable with the second system and user devices. This prevents unauthorized use of keys and locks.

Abstract: A key and lock device comprises a key having a first electronic circuit and a lock having a second electronic circuit. The key and the lock store secret information, some of which is unique for each device. The key and the lock exchange a random number through connectors and perform a calculation in the respective circuitry based on the random number and secret information. An electrical blocking mechanism is moved to a non-blocking position if a comparison of the calculations in the circuits gives the correct result.

Abstract: The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.

Abstract: A key and lock device comprises a key and a standalone lock. The key has an electronic circuitry with a first memory and a contact. The lock has electronic circuitry with a memory, and a contact arranged to co-operate with the key's first contact. A blocking mechanism is adapted to block operation of the lock unless an authorized key is inserted in the lock. The memory of the key stores a public identification item of the key identifying a group of keys having identical mechanical codes. In the memory of the lock, there is provided a list of the public and secret identification items of authorized keys and a list of the public identification item of non-authorized keys. A key is authorized if the public and secret identification items are present in the list of authorized keys and the public identification item thereof is absent in the list of non-authorized keys.