Patents by Inventor Bjørn-Ove FIMLAND

Bjørn-Ove FIMLAND has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10861696
    Abstract: A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group (IV) element.
    Type: Grant
    Filed: May 4, 2018
    Date of Patent: December 8, 2020
    Assignee: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Helge Weman, Bjørn-Ove Fimland, Dong Chul Kim
  • Patent number: 10714337
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: July 14, 2020
    Assignees: CRAYONANO AS, NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Dong Chul Kim, Ida Marie Høiaas, Mazid Munshi, Bjørn Ove Fimland, Helge Weman, Dingding Ren, Dasa Dheeraj
  • Publication number: 20200141027
    Abstract: A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.
    Type: Application
    Filed: November 11, 2019
    Publication date: May 7, 2020
    Inventors: Bjørn-Ove Fimland, Dheeraj L. Dasa, Helge Weman
  • Publication number: 20200105952
    Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.
    Type: Application
    Filed: July 8, 2019
    Publication date: April 2, 2020
    Inventors: Helge WEMAN, Bjørn-Ove FIMLAND, Dong Chul KIM
  • Publication number: 20200006051
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Application
    Filed: June 28, 2019
    Publication date: January 2, 2020
    Inventors: Dong-Chul KIM, Ida Marie HØIAAS, Mazid MUNSHI, Bjørn Ove FIMLAND, Helge WEMAN, Dingding REN, Dasa DHEERAJ
  • Patent number: 10472734
    Abstract: A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.
    Type: Grant
    Filed: June 23, 2014
    Date of Patent: November 12, 2019
    Assignee: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Bjørn-Ove Fimland, Dheeraj L. Dasa, Helge Weman
  • Patent number: 10347781
    Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.
    Type: Grant
    Filed: June 21, 2013
    Date of Patent: July 9, 2019
    Assignee: NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Helge Weman, Bjørn-Ove Fimland, Dong Chul Kim
  • Patent number: 10243104
    Abstract: A composition of matter comprising a plurality of nanowires on a substrate, said nanowires having been grown epitaxially on said substrate in the presence of a metal catalyst such that a catalyst deposit is located at the top of at least some of said nanowires, wherein said nanowires comprise at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group IV element; and wherein a graphitic layer is in contact with at least some of the catalyst deposits on top of said nanowires.
    Type: Grant
    Filed: January 10, 2013
    Date of Patent: March 26, 2019
    Assignee: NORWEGIAN UNIVERESITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Helge Weman, Bjørn-Ove Fimland, Dong Chul Kim
  • Publication number: 20180254184
    Abstract: A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group (IV) element.
    Type: Application
    Filed: May 4, 2018
    Publication date: September 6, 2018
    Inventors: Helge Weman, Bjørn-Ove Fimland, Dong Chul Kim
  • Publication number: 20180226242
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Application
    Filed: August 1, 2016
    Publication date: August 9, 2018
    Inventors: Dong-Chul KIM, Ida Marie HØIAAS, Mazid MUNSHI, Bjørn Ove FIMLAND, Helge WEMAN, Dingding REN, Dasa DHEERAJ
  • Patent number: 9966257
    Abstract: A composition of matter comprising at least one nanowire on a graphitic substrate, said at least one nanowire having been grown epitaxially on said substrate, wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group (IV) element.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: May 8, 2018
    Assignee: Norwegian University of Science and Technology
    Inventors: Helge Weman, Bjørn-Ove Fimland, Dong Chul Kim
  • Publication number: 20150194549
    Abstract: A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.
    Type: Application
    Filed: June 21, 2013
    Publication date: July 9, 2015
    Inventors: Helge Weman, Bjørn-Ove Fimland, Dong Chul Kim
  • Publication number: 20150076450
    Abstract: A composition of matter comprising a plurality of nanowires on a substrate, said nanowires having been grown epitaxially on said substrate in the presence of a metal catalyst such that a catalyst deposit is located at the top of at least some of said nanowires, wherein said nanowires comprise at least one group III-V compound or at least one group II-VI compound or comprises at least one non carbon group IV element; and wherein a graphitic layer is in contact with at least some of the catalyst deposits on top of said nanowires.
    Type: Application
    Filed: January 10, 2013
    Publication date: March 19, 2015
    Inventors: Helge Weman, Bjørn-Ove Fimland, Dong Chul Kim
  • Publication number: 20110021032
    Abstract: The present invention relates to a wet acid etchant for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0<x<1, 0<y<1, 0?z<1 and 0<x+z<1, a process for wet acid etching of intrinsic, n-doped or p-doped Al1-x-zGaxInzAs1-ySby with 0<x<1, 0<y<1 and 0?z<1 and 0<x+z<1, and a semiconductor structure prepared by wet acid etching of Al1-x-zGaxInzAs1-ySby with 0<x<1, 0<y?1, 0?z<1 and 0<x+z<1. The etchant comprises: organic acid; oxidizing agent; hydrofluoric acid.
    Type: Application
    Filed: January 12, 2010
    Publication date: January 27, 2011
    Inventors: Renato BUGGE, Bjørn-Ove FIMLAND