Patents by Inventor Bjørn Ove M. FIMLAND

Bjørn Ove M. FIMLAND has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanowires/nanopyramids shaped light emitting diodes and photodetectors
    Patent number: 11594657
    Abstract: A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: February 28, 2023
    Assignees: CRAYONANO AS, NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Dasa L. Dheeraj, Dong Chul Kim, Bjørn Ove M. Fimland, Helge Weman
  • Nanowires or nanopyramids grown on a graphene substrate
    Patent number: 11264536
    Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: March 1, 2022
    Assignees: CRAYONANO AS, NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Dong Chul Kim, Ida Marie E. Høiaas, Carl Philip J. Heimdal, Bjørn Ove M. Fimland, Helge Weman
  • NANOWIRES OR NANOPYRAMIDS GROWN ON GRAPHITIC SUBSTRATE
    Publication number: 20200105965
    Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.
    Type: Application
    Filed: July 8, 2019
    Publication date: April 2, 2020
    Inventors: Dong Chul KIM, Ida Marie E. HØIAAS, Carl Philip J. HEIMDAL, Bjørn Ove M. FIMLAND, Helge WEMAN
  • Nanowires or nanopyramids grown on graphitic substrate
    Patent number: 10347791
    Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support; a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: July 9, 2019
    Assignees: CRAYONANO AS, NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Dong Chul Kim, Ida Marie E. Høiaas, Carl Philip J. Heimdal, Bjørn Ove M. Fimland, Helge Weman
  • NANOWIRES OR NANOPYRAMIDS GROWN ON GRAPHITIC SUBSTRATE
    Publication number: 20180204976
    Abstract: A composition of matter comprising: a graphitic substrate optionally carried on a support; a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowires or nanopyramids comprising at least one semiconducting group III-V compound.
    Type: Application
    Filed: July 13, 2016
    Publication date: July 19, 2018
    Inventors: Dong Chul KIM, Ida Marie E. HØIAAS, Carl Philip J. HEIMDAL, Bjørn Ove M. FIMLAND, Helge WEMAN
  • NANOWIRES/NANOPYRAMIDS SHAPED LIGHT EMITTING DIODES AND PHOTODETECTORS
    Publication number: 20180204977
    Abstract: A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.
    Type: Application
    Filed: July 13, 2016
    Publication date: July 19, 2018
    Inventors: Dasa L. DHEERAJ, Dong Chul KIM, Bjørn Ove M. FIMLAND, Helge WEMAN