Patents by Inventor Bjorn Jonas Ohlsson
Bjorn Jonas Ohlsson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10263149Abstract: The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructure LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.Type: GrantFiled: March 20, 2015Date of Patent: April 16, 2019Assignee: QUNANO ABInventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson, Yourii Martynov, Steven L. Konsek, Peter Jesper Hanberg
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Patent number: 9680039Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: GrantFiled: June 10, 2014Date of Patent: June 13, 2017Assignee: QUNANO ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Publication number: 20150333225Abstract: The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructure LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.Type: ApplicationFiled: March 20, 2015Publication date: November 19, 2015Inventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson, Yourii Martynov, Steven L. Konsek, Peter Jasper Hanberg
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Publication number: 20150027523Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: ApplicationFiled: June 10, 2014Publication date: January 29, 2015Inventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Patent number: 8790462Abstract: A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbour. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.Type: GrantFiled: October 6, 2009Date of Patent: July 29, 2014Assignee: Qunano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Thomas M. I. Martensson
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Patent number: 8772626Abstract: A solar cell may include an electrically conducting substrate, a plurality of nanowhiskers extending from the substrate and a transparent electrode extending over free ends of the nanowhiskers and making electrical contact with them. Each nanowhisker may have a column with a diameter of nanometer dimension. The column may include a first p-doped semiconductor lengthwise segment and a second n-doped semiconductor lengthwise segment. The first and second semiconductor segments may have an interface between them, which forms a p-n junction. The nanowhiskers may be encapsulated in a transparent material.Type: GrantFiled: December 31, 2007Date of Patent: July 8, 2014Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Publication number: 20130146835Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: ApplicationFiled: December 31, 2007Publication date: June 13, 2013Inventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Patent number: 8450717Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: GrantFiled: December 31, 2007Date of Patent: May 28, 2013Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Patent number: 8242481Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween.Type: GrantFiled: January 18, 2012Date of Patent: August 14, 2012Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Ake Ledebo
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Publication number: 20120126200Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween.Type: ApplicationFiled: January 18, 2012Publication date: May 24, 2012Applicant: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Ake Ledebo
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Patent number: 8183587Abstract: The present invention relates to light emitting diodes, LEDs. In particular the invention relates to a LED comprising a nanowire as an active component. The nanostructured LED according to the embodiments of the invention comprises a substrate and at an upstanding nanowire protruding from the substrate. A pn-junction giving an active region to produce light is present within the structure. The nanowire, or at least a part of the nanowire, forms a wave-guiding section directing at least a portion of the light produced in the active region in a direction given by the nanowire.Type: GrantFiled: June 15, 2007Date of Patent: May 22, 2012Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson
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Patent number: 8120009Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode.Type: GrantFiled: February 23, 2011Date of Patent: February 21, 2012Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Ake Ledebo
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Publication number: 20110193055Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode.Type: ApplicationFiled: February 23, 2011Publication date: August 11, 2011Applicant: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Åke Ledebo
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Patent number: 7911035Abstract: Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, <001> III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential <111>B direction. As one example, <001> InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.Type: GrantFiled: January 4, 2008Date of Patent: March 22, 2011Assignee: QuNano ABInventors: Werner Seifert, Lars Ivar Samuelson, Björn Jonas Ohlsson, Lars Magnus Borgström
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Patent number: 7910492Abstract: Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode.Type: GrantFiled: August 22, 2008Date of Patent: March 22, 2011Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Lars-Ake Ledebo
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Publication number: 20100283064Abstract: The present invention relates to nanostructured light emitting diodes, LEDs. The nanostructured LED device according to the invention comprises an array of a plurality of individual nanostructured LEDs. Each of the nanostructured LEDs has an active region wherein light is produced. The nanostructured device further comprise a plurality of reflectors, each associated to one individual nanostructured LED (or a group of nanostructured LEDs. The individual reflectors has a concave surface facing the active region of the respective individual nanostructured LED or active regions of group of nanostructured LEDs.Type: ApplicationFiled: December 27, 2007Publication date: November 11, 2010Inventors: Lars Ivar Samuelson, Bo Pedersen, Bjorn Jonas Ohlsson, Yourii Martynov, Steven L. Konsek, Peter Jesper Hanberg
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Patent number: 7745813Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: GrantFiled: December 31, 2007Date of Patent: June 29, 2010Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Patent number: 7682943Abstract: A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.Type: GrantFiled: October 5, 2007Date of Patent: March 23, 2010Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson
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Publication number: 20100035412Abstract: A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbour. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.Type: ApplicationFiled: October 6, 2009Publication date: February 11, 2010Inventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Thomas M.I. Martensson
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Patent number: 7608147Abstract: A nanoengineered structure comprising an array of more than about 1000 nanowhiskers on a substrate in a predetermined spatial configuration, for use for example as a photonic band gap array, wherein each nanowhisker is sited within a distance from a predetermined site not greater than about 20% of its distance from its nearest neighbor. To produce the array, an array of masses of a catalytic material are positioned on the surface, heat is applied and materials in gaseous form are introduced such as to create a catalytic seed particle from each mass, and to grow, from the catalytic seed particle, epitaxially, a nanowhisker of a predetermined material, and wherein each mass upon melting, retains approximately the same interface with the substrate surface such that forces causing the mass to migrate across said surface are less than a holding force across a wetted interface on the substrate surface.Type: GrantFiled: January 7, 2004Date of Patent: October 27, 2009Assignee: QuNano ABInventors: Lars Ivar Samuelson, Bjorn Jonas Ohlsson, Thomas M. I. Martensson