Abstract: Various embodiments of wafers include a polycrystalline silicon carbide (SiC) layer or base substrate. The polycrystalline silicon carbide (SiC) layer may have a resistivity less than or equal to 2 mohm-cm (milliohm-centimeter) such that the polycrystalline silicon carbide layer is a low resistivity polycrystalline silicon carbide layer. The polycrystalline silicon carbide layer may have grains with a grain size less than or equal to 1 millimeter (mm), and may have a non-columnar structure. The polycrystalline silicon carbide layer may have a warpage less than or equal to 75 ?m (micrometers). A monocrystalline silicon carbide (SiC) layer may be coupled to the polycrystalline silicon carbide (SiC) layer by a bonding layer. The monocrystalline silicon carbide layer may be thinner than the polycrystalline silicon carbide layer.

Abstract: At least one embodiment of a method of manufacturing includes forming a first polycrystalline silicon carbide (SiC) substrate with a sintering process by sintering one or more powdered semiconductor materials. After the first polycrystalline SiC substrate is formed utilizing the sintering process, the first polycrystalline silicon carbide SiC substrate is utilized to form a second polycrystalline SiC substrate with a chemical vapor deposition (CVD) process. The second polycrystalline SiC substrate is formed on a surface of the first polycrystalline SiC substrate by depositing SiC on the surface of the first polycrystalline SiC substrate with the CVD process. As the first and second polycrystalline SiC substrates are made of the same or similar semiconductor material (e.g., SiC), a first coefficient of thermal expansion (CTE) for the first polycrystalline SiC substrate is the same or similar to the second CTE of the second polycrystalline SiC substrate.

Abstract: A polycrystalline silicon carbide (SiC) substrate with a density gradient between a first side of the polycrystalline SiC substrate and a second side of the polycrystalline SiC substrate opposite to the first side. A first density at the first side of the polycrystalline SiC substrate is less than a second density at the second side of the polycrystalline SiC substrate. The polycrystalline SiC substrate with the density gradient may be formed by forming a polycrystalline SiC base substrate with a sintering process followed by a post-sintering process. For example, the post sintering process may be at least one of the following of: applying a first temperature to the first side and a second temperature to the second side of the polycrystalline SiC substrate and performing a chemical vapor deposition (CVD) process to impregnate further silicon (Si) and carbon (C) atoms into the polycrystalline SiC base substrate.

Abstract: A lifting tool for replacing a battery pack in an electric vehicle is provided. A body has a lifting interface that is attachable to an external lifting aid. A first arm is provided with a first lifting arrangement and a second arm is provided with a second lifting arrangement, where the battery pack is adapted to be positioned between the arms when the lifting tool is to lift and hold a battery pack. The lifting tool includes locking pins adapted to be inserted horizontally through the lifting arrangements of the lifting tool and the lifting openings of the battery pack, such that the locking pins secure the battery pack to the lifting tool.

Abstract: An access node (100-A) of a cellular radio network controls switching of a further access node (100-B, 100-C) to an energy saving mode. Further, the access node (100-A) monitors energy consumption of the access node (100-A). Further, the access node (100-A) receives a report from the further access node (100-B, 100-C). The report indicates energy consumption of the further access node (100-B, 100-C). Based on the monitored energy consumption of the access node (100-A) and the indicated energy consumption of the further access node (100-B, 100-C), the access node (100-A) determines energy saving information representing energy saving associated with the switching of the further access node (100-B, 100-C) to the energy saving mode. The access node (100-A) may then send the energy saving information to a management node (150) of the cellular radio network.

Abstract: A technique for configuring a network element in a communication network is presented. A method aspect performed by a network element comprises receiving at least one configuration profile. The configuration profile defines a set of one or more parameters values for one or more associated configuration parameters of the network element as well as one or more activation conditions for the set of one or more parameter values. The network element then determines whether or not the one or more activation conditions for a particular configuration profile are fulfilled. In case the one or more activation conditions are fulfilled, it triggers activation of the parameter value set defined in the configuration profile for the one or more associated parameters.

Abstract: A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm?3 and a carrier lifetime of at least 50 ns.

Abstract: A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 ?m arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.

Abstract: A distance measuring measurement instrument and a method for such a station for scanning a surface or volume of an object are disclosed. The measurement instrument includes a position calculating circuit adapted to calculate position data including at least horizontal and vertical angle and distance between the measurement instrument and the object. A plurality of points in each of a number of subsets of a scanning area of the object during a measurement session and, at detection of a new point in the new subset, information related to at least one point having a corresponding location in at least one preceding subset is used, wherein the preceding subset being adjacent to the new subset.

Abstract: A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm?3 and a carrier lifetime of at least 50 ns.

Abstract: A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm?3, and a concentration of transition metals impurities less than 5×1014 cm?3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

Abstract: The present invention concerns a ballistic protection against objects such as projectiles from fire arms, alternatively scatter from for example hand grenades. The protection comprises an enclosure (1, 2, 4, 5, 6, 7, 9) adapted so that the object (10) can penetrate the enclosure (1, 2, 4, 5, 6, 7, 9) in at least one area (2); at least one intermediate layer (3) comprising granules (27) arranged within the enclosure (1, 2, 4, 5, 6, 7, 9), which intermediate layer (3) and enclosure (1, 2, 4, 5, 6, 7, 9) are arranged to decelerate said object (10).

Abstract: A distance measuring measurement instrument and a method for such a station for scanning a surface or volume of an object are disclosed. The measurement instrument includes a position calculating circuit adapted to calculate position data including at least horizontal and vertical angle and distance between the measurement instrument and the object. A plurality of points in each of a number of subsets of a scanning area of the object during a measurement session and, at detection of a new point in the new subset, information related to at least one point having a corresponding location in at least one preceding subset is used, wherein the preceding subset being adjacent to the new subset.

Abstract: A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 ?m arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.

Abstract: An electro optic distance measurement apparatus using time of flight measurements and a method therefore are provided for determining a distance to a target of two or more targets located along a common line of sight from the distance measurement apparatus. Approximate distances to the two or more targets are determined by means of the distance measurement apparatus, one of the two or more targets is selected, and an accurate distance to the selected target is determined by means of the distance measurement apparatus.

Abstract: A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 ?m.

Abstract: A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm?3, and a concentration of transition metals impurities less than 5×1014 cm?3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

Abstract: A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm?3 and a carrier lifetime of at least 50 ns at room temperature.

Abstract: An electro optic distance measurement apparatus using time of flight measurements and a method therefore are provided for determining a distance to a target of two or more targets located along a common line of sight from the distance measurement apparatus. Approximate distances to the two or more targets are determined by means of the distance measurement apparatus, one of the two or more targets is selected, and an accurate distance to the selected target is determined by means of the distance measurement apparatus.

Abstract: The present invention concerns a ballistic protection against objects such as projectiles from fire arms, alternatively scatter from for example hand grenades. The protection comprises an enclosure (1, 2, 4, 5, 6, 7, 9) adapted so that the object (10) can penetrate the enclosure (1, 2, 4, 5, 6, 7, 9) in at least one area (2); at least one intermediate layer (3) comprising granules (27) arranged within the enclosure (1, 2, 4, 5, 6, 7, 9), which intermediate layer (3) and enclosure (1, 2, 4, 5, 6, 7, 9) are arranged to deaccelerate said object (10).