Abstract: A semiconductor device assembly is provided. The assembly comprises a package substrate, a first stack of semiconductor dies having a first set of planform dimensions disposed over a first location on the substrate, a second stack of semiconductor dies having a second set of planform dimensions different from the first set disposed over a second location on the substrate, and an encapsulant at least partially encapsulating the substrate, the first stack and the second stack. The first stack of semiconductor dies has a first planform area, the second stack of semiconductor dies has a second planform area, and a sum of the first and second planform areas can be at least 50%, 67%, 75% or even more of an area of the package substrate.

Abstract: A semiconductor device assembly can include a substrate including a plurality of external connections. The assembly can include a first individual module and a first bond pad. The first individual module can be disposed on the substrate such that the first side of the first individual module faces the substrate. In some embodiments, the first individual module electrically is coupled to an external connection of the substrate via the first bond pad. The assembly can include a second individual module comprising a plurality of lateral sides. The second individual module can be disposed over the first individual module. In some embodiments, a first lateral side of the second individual module includes a first step forming a first overhang portion and a first recess. In some embodiments, the first bond pad is vertically aligned with the first recess of the second individual module.

Abstract: A semiconductor device assembly is provided. The assembly comprises a package substrate, a first stack of semiconductor dies having a first set of planform dimensions disposed over a first location on the substrate, a second stack of semiconductor dies having a second set of planform dimensions different from the first set disposed over a second location on the substrate, and an encapsulant at least partially encapsulating the substrate, the first stack and the second stack. The first stack of semiconductor dies has a first planform area, the second stack of semiconductor dies has a second planform area, and a sum of the first and second planform areas can be at least 50%, 67%, 75% or even more of an area of the package substrate.

Abstract: A semiconductor device assembly can include a substrate including a plurality of external connections. The assembly can include a first individual module and a first bond pad. The first individual module can be disposed on the substrate such that the first side of the first individual module faces the substrate. In some embodiments, the first individual module electrically is coupled to an external connection of the substrate via the first bond pad. The assembly can include a second individual module comprising a plurality of lateral sides. The second individual module can be disposed over the first individual module. In some embodiments, a first lateral side of the second individual module includes a first step forming a first overhang portion and a first recess. In some embodiments, the first bond pad is vertically aligned with the first recess of the second individual module.

Abstract: A semiconductor device assembly is provided. The assembly comprises a package substrate, a first stack of semiconductor dies having a first set of planform dimensions disposed over a first location on the substrate, a second stack of semiconductor dies having a second set of planform dimensions different from the first set disposed over a second location on the substrate, and an encapsulant at least partially encapsulating the substrate, the first stack and the second stack. The first stack of semiconductor dies has a first planform area, the second stack of semiconductor dies has a second planform area, and a sum of the first and second planform areas can be at least 50%, 67%, 75%, or even more of an area of the package substrate.

Abstract: A semiconductor device assembly can include a substrate including a plurality of external connections. The assembly can include a first individual module and a first bond pad. The first individual module can be disposed on the substrate such that the first side of the first individual module faces the substrate. In some embodiments, the first individual module electrically is coupled to an external connection of the substrate via the first bond pad. The assembly can include a second individual module comprising a plurality of lateral sides. The second individual module can be disposed over the first individual module. In some embodiments, a first lateral side of the second individual module includes a first step forming a first overhang portion and a first recess. In some embodiments, the first bond pad is vertically aligned with the first recess of the second individual module.

Abstract: A semiconductor device assembly can include a substrate including a plurality of external connections. The assembly can include a first individual module and a first bond pad. The first individual module can be disposed on the substrate such that the first side of the first individual module faces the substrate. In some embodiments, the first individual module electrically is coupled to an external connection of the substrate via the first bond pad. The assembly can include a second individual module comprising a plurality of lateral sides. The second individual module can be disposed over the first individual module. In some embodiments, a first lateral side of the second individual module includes a first step forming a first overhang portion and a first recess. In some embodiments, the first bond pad is vertically aligned with the first recess of the second individual module.

Abstract: A semiconductor device assembly is provided. The assembly comprises a package substrate, a first stack of semiconductor dies having a first set of planform dimensions disposed over a first location on the substrate, a second stack of semiconductor dies having a second set of planform dimensions different from the first set disposed over a second location on the substrate, and an encapsulant at least partially encapsulating the substrate, the first stack and the second stack. The first stack of semiconductor dies has a first planform area, the second stack of semiconductor dies has a second planform area, and a sum of the first and second planform areas can be at least 50%, 67%, 75%, or even more of an area of the package substrate.

Abstract: A semiconductor device assembly is provided. The assembly comprises a package substrate, a first stack of semiconductor dies having a first set of planform dimensions disposed over a first location on the substrate, a second stack of semiconductor dies having a second set of planform dimensions different from the first set disposed over a second location on the substrate, and an encapsulant at least partially encapsulating the substrate, the first stack and the second stack. The first stack of semiconductor dies has a first planform area, the second stack of semiconductor dies has a second planform area, and a sum of the first and second planform areas can be at least 50%, 67%, 75%, or even more of an area of the package substrate.

Abstract: A semiconductor device assembly is provided. The assembly comprises a package substrate, a first stack of semiconductor dies having a first set of planform dimensions disposed over a first location on the substrate, a second stack of semiconductor dies having a second set of planform dimensions different from the first set disposed over a second location on the substrate, and an encapsulant at least partially encapsulating the substrate, the first stack and the second stack. The first stack of semiconductor dies has a first planform area, the second stack of semiconductor dies has a second planform area, and a sum of the first and second planform areas can be at least 50%, 67%, 75%, or even more of an area of the package substrate.

Abstract: Methods for reducing stress in microelectronic devices and microelectronic devices formed using such methods are disclosed herein. One such device can include a first support member, a second support member, and a microelectronic die positioned between the first support member and the second support member such that the second support member at least approximately completely covers a surface of the die. The die is in intimate contact with both the first support member and the second support member and electrically coupled to at least one of the first support member and the second support member. The device further includes a fill material between the first and second support members and at least partially encapsulating the die. The second support member has structural material characteristics that are closer to those of the first support member than to the structural material characteristics of the fill material.

Abstract: Methods for reducing stress in microelectronic devices and microelectronic devices formed using such methods are disclosed herein. One such device can include a first support member, a second support member, and a microelectronic die positioned between the first support member and the second support member such that the second support member at least approximately completely covers a surface of the die. The die is in intimate contact with both the first support member and the second support member and electrically coupled to at least one of the first support member and the second support member. The device further includes a fill material between the first and second support members and at least partially encapsulating the die. The second support member has structural material characteristics that are closer to those of the first support member than to the structural material characteristics of the fill material.

Abstract: A board-on-chip (BOC) semiconductor package includes a multisegmented, longitudinally slotted interposer substrate through which an elongate row of die bond pads is accessed for electrical attachment, as by wire bonding, to conductive traces on the opposite side of the interposer substrate. One or more reinforcements in the form of crosspieces or bridges span and segment intermediate portions of the substrate slot to resist bending stresses acting in the slot region proximate the centerline of the interposer substrate tending to crack or delaminate a polymer wire bond mold cap filling and covering the slot and the wire bonds. Various interposer substrate configurations are also disclosed, as are methods of fabrication.

Abstract: Stress balanced semiconductor device packages, a method of forming, and a method of modifying a mold segment for use in the method are disclosed. A semiconductor die is attached to one side of a substrate having discrete conductive elements such as a ball grid array (BGA) on the opposing side thereof. An envelope of encapsulant material is disposed over the semiconductor die on one side of the substrate while a stress balancing structure comprising at least one stem member and at least one transversely extending branch member formed of encapsulant material is disposed over the opposing side of the substrate in an arrangement which does not interfere with the discrete conductive elements. The envelope and the stress balancing structure may be simultaneously formed.

Abstract: A board-on-chip (BOC) semiconductor package includes a multisegmented, longitudinally slotted interposer substrate through which an elongate row of die bond pads is accessed for electrical attachment, as by wire bonding, to conductive traces on the opposite side of the interposer substrate. One or more reinforcements in the form of crosspieces or bridges span and segment intermediate portions of the interposer substrate slot to resist bending stresses acting in the slot region proximate the centerline of the interposer substrate tending to crack or delaminate a polymer wire bond mold cap filling and covering the slot and the wire bonds. Various interposer substrate configurations are also disclosed, as are methods of fabrication.

Abstract: Stress balanced semiconductor device packages, a method of forming, and a method of modifying a mold segment for use in the method are disclosed. A semiconductor die is attached to one side of a substrate having discrete conductive elements such as a ball grid array (BGA) on the opposing side thereof. An envelope of encapsulant material is disposed over the semiconductor die on one side of the substrate while a stress balancing structure comprising at least one stem member and at least one transversely extending branch member formed of encapsulant material is disposed over the opposing side of the substrate in an arrangement which does not interfere with the discrete conductive elements. The envelope and the stress balancing structure may be simultaneously formed.

Abstract: A board-on-chip (BOC) semiconductor package includes a multisegmented, longitudinally slotted interposer substrate through which an elongate row of die bond pads is accessed for electrical attachment, as by wire bonding, to conductive traces on the opposite side of the interposer substrate. One or more reinforcements in the form of crosspieces or bridges span and segment intermediate portions of the substrate slot to resist bending stresses acting in the slot region proximate the centerline of the interposer substrate tending to crack or delaminate a polymer wire bond mold cap filling and covering the slot and the wire bonds. Various interposer substrate configurations are also disclosed, as are methods of fabrication.

Abstract: A board-on-chip (BOC) semiconductor package includes a multisegmented, longitudinally slotted interposer substrate through which an elongate row of die bond pads is accessed for electrical attachment, as by wire bonding, to conductive traces on the opposite side of the interposer substrate. One or more reinforcements in the form of crosspieces or bridges span and segment intermediate portions of the substrate slot to resist bending stresses acting in the slot region proximate the centerline of the interposer substrate tending to crack or delaminate a polymer wire bond mold cap filling and covering the slot and the wire bonds. Various interposer substrate configurations are also disclosed, as are methods of fabrication.

Abstract: A board-on-chip (BOC) semiconductor package includes a multisegmented, longitudinally slotted interposer substrate through which an elongate row of die bond pads is accessed for electrical attachment, as by wire bonding, to conductive traces on the opposite side of the interposer substrate. One or more reinforcements in the form of crosspieces or bridges span and segment intermediate portions of the substrate slot to resist bending stresses acting in the slot region proximate the centerline of the interposer substrate tending to crack or delaminate a polymer wire bond mold cap filling and covering the slot and the wire bonds. Various interposer substrate configurations are also disclosed, as are methods of fabrication.

Abstract: Stress balanced semiconductor device packages, a method of forming, and a method of modifying a mold segment for use in the method. A semiconductor die is attached to one side of a substrate having discrete conductive elements such as a ball grid array (BGA) on the opposing side thereof. An envelope of encapsulant material is disposed over the semiconductor die on one side of the substrate while a stress balancing structure comprising at least one stem member and at least one transversely extending branch member formed of encapsulant material is disposed over the opposing side of the substrate in an arrangement which does not interfere with the discrete conductive elements. The envelope and the stress balancing structure may be simultaneously formed.