Patents by Inventor Blaise Fanning

Blaise Fanning has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9958926
    Abstract: A non-volatile random access memory (NVRAM) is used in a computer system to provide instant responses to sleep state transitions. The computer system includes a processor coupled to an NVRAM, which is accessible by the processor without passing through an I/O subsystem. The NVRAM is byte-rewritable and byte-erasable by the processor. In response to a request to enter a powered sleep state, the computer system converts the powered sleep state into a powered-off sleep state with system memory context stored in the NVRAM. The powered sleep state is defined as a state in which power is supplied to volatile random access memory in the computer system, and the powered-off sleep state is defined as a state in which power is removed from the volatile random access memory. In response to a wake event, the computer system resumes working state operations using the system memory context stored in the NVRAM.
    Type: Grant
    Filed: December 13, 2011
    Date of Patent: May 1, 2018
    Assignee: Intel Corporation
    Inventors: Leena K. Puthiyedath, Raj K. Ramanujan, Michael Rothman, Blaise Fanning, Vincent J. Zimmer
  • Publication number: 20180095674
    Abstract: In one embodiment, an inter-memory transfer interface having selective data compression/decompression in accordance with the present description, selects from multiple candidate processes, a compression/decompression process to compress a region of data from a near memory before transmitting the compressed data to the far memory. In another aspect, the inter-memory transfer interface stores metadata indicating the particular compression/decompression process selected to compress that region of data. The stored metadata may then be used to identify the compression/decompression technique selected to compress a particular region of data, for purposes of locating the compressed data and subsequently decompressing data of that region when read from the far memory. Other aspects are described herein.
    Type: Application
    Filed: September 30, 2016
    Publication date: April 5, 2018
    Inventors: Alaa R. ALAMELDEEN, Glenn J. HINTON, Blaise FANNING, Robert J. ROYER, JR., James J. GREENSKY
  • Publication number: 20180088822
    Abstract: Systems, apparatuses and methods may provide for identifying a first block and a second block, wherein the first block includes a first plurality of cache lines, the second block includes a second plurality of cache lines, and the second block resides in a memory-side cache. Additionally, each cache line in the first plurality of cache lines may be compressed with a corresponding cache line in the second plurality of cache lines to obtain a compressed block that includes a third plurality of cache lines. In one example, the second block is replaced in the memory-side cache with the compressed block if the compressed block satisfies a size condition.
    Type: Application
    Filed: September 29, 2016
    Publication date: March 29, 2018
    Inventors: Alaa R. Alameldeen, Glenn J. Hinton, Blaise Fanning, James J. Greensky
  • Publication number: 20180074961
    Abstract: Technology for an apparatus is described. The apparatus can include a plurality of cache memories and a cache controller. The cache controller can allocate a cache entry to store data across the plurality of cache memories. The cache entry can include a value in a metadata field indicating an interleave policy. The cache controller can selectively assign the interleave policy to be applied based on a type of data stored in the plurality of cache memories.
    Type: Application
    Filed: September 12, 2016
    Publication date: March 15, 2018
    Applicant: Intel Corporation
    Inventors: Daniel Greenspan, Blaise Fanning
  • Patent number: 9910771
    Abstract: In an embodiment, a memory interface may send an indication that a request is being sent. The indication may be sent to a non-volatile memory via a point-to-point bus between a memory interface and the non-volatile memory. The memory interface may send the request to the non-volatile memory via the bus. The request may include an address that may be used to identify a location for storing or reading data. The non-volatile memory may acquire the request from the bus and process the request. After processing the request, the non-volatile memory may send an indication to the memory interface that indicates the non-volatile memory has a response to send to the memory interface. The memory interface may grant access to the bus to the non-volatile memory. After being granted access to the bus, the non-volatile memory may send the response to the memory interface.
    Type: Grant
    Filed: January 2, 2017
    Date of Patent: March 6, 2018
    Assignee: Intel Corporation
    Inventors: Eng Hun Ooi, Robert J. Royer, Jr., Michael W. Williams, Jeffrey R. Wilcox, Ritesh B. Trivedi, Blaise Fanning
  • Patent number: 9904592
    Abstract: Apparatus, systems, and methods to manage memory latency operations are described. In one embodiment, an electronic device comprises a processor and a memory control logic to receive data from a remote memory device, store the data in a local cache memory, receive an error correction code indicator associated with the data, and implement a data management policy in response to the error correction code indicator. Other embodiments are also disclosed and claimed.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: February 27, 2018
    Assignee: Intel Corporation
    Inventors: Robert J. Royer, Jr., Blaise Fanning, Eng Hun Ooi
  • Patent number: 9860173
    Abstract: A storage device is provided to maintain a count of flow control credits to be granted to a device in association with transactions over a channel to be implemented on a data link and control logic is provided to communicate, to the device, an indication of an amount of flow control credits for the device in association with a reset of the data link.
    Type: Grant
    Filed: December 31, 2013
    Date of Patent: January 2, 2018
    Assignee: Intel Corporation
    Inventors: Jasmin Ajanovic, David Harriman, Blaise Fanning, David M. Lee
  • Patent number: 9852069
    Abstract: A method and system are disclosed. In one embodiment the method includes allocating several memory locations within a phase change memory and switch (PCMS) memory to be utilized as a Random Access Memory (RAM) Disk. The RAM Disk is created for use by a software application running in a computer system. The method also includes mapping at least a portion of the allocated amount of PCMS memory to the software application address space. Finally, the method also grants the software application direct access to at least a portion of the allocated amount of the PCMS memory.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: December 26, 2017
    Assignee: Intel Corporation
    Inventors: James B. Crossland, Toby Opferman, Blaise Fanning
  • Patent number: 9836424
    Abstract: An enhanced general input/output communication architecture, protocol and related methods are presented.
    Type: Grant
    Filed: December 30, 2013
    Date of Patent: December 5, 2017
    Assignee: Intel Corporation
    Inventors: Jasmin Ajanovic, David Harriman, Blaise Fanning, David Lee
  • Publication number: 20170336978
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Application
    Filed: June 9, 2017
    Publication date: November 23, 2017
    Applicant: Intel Corporation
    Inventors: BLAISE FANNING, MARK A. SCHMISSEUR, RAYMOND S. TETRICK, ROBERT J. ROYER, JR., DAVID B. MINTURN, SHANE MATTHEWS
  • Publication number: 20170337009
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Application
    Filed: June 30, 2017
    Publication date: November 23, 2017
    Inventors: Blaise FANNING, Shekoufeh QAWAMI, Raymond S. Tetrick, Frank T. HADY
  • Patent number: 9753875
    Abstract: In one embodiment, the present invention includes a method for receiving a request in a router from a first endpoint coupled to the router, where the request is for an aggregated completion. In turn, the router can forward the request to multiple target agents, receive a response from each of the target agents, and consolidate the responses into an aggregated completion. Then, the router can send the aggregated completion to the first endpoint. Other embodiments are described and claimed.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: September 5, 2017
    Assignee: Intel Corporation
    Inventors: Sridhar Lakshmanamurthy, Mikal C. Hunsaker, Michael T. Klinglesmith, Blaise Fanning, Mohan K. Nair, Joseph Murray, Rohit R. Verma, Gary J. Lavelle, Robert P. Adler
  • Patent number: 9736071
    Abstract: An enhanced general input/output communication architecture, protocol and related methods are presented.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: August 15, 2017
    Assignee: Intel Corporation
    Inventors: Jasmin Ajanovic, David Harriman, Blaise Fanning, David Lee
  • Patent number: 9734079
    Abstract: Hybrid multi-level memory architecture technologies are described. A System on Chip (SOC) includes multiple functional units and a multi-level memory controller (MLMC) coupled to the functional units. The MLMC is coupled to a hybrid multi-level memory architecture including a first-level dynamic random access memory (DRAM) (near memory) that is located on-package of the SOC and a second-level DRAM (far memory) that is located off-package of the SOC. The MLMC presents the first-level DRAM and the second-level DRAM as a contiguous addressable memory space and provides the first-level DRAM to software as additional memory capacity to a memory capacity of the second-level DRAM. The first-level DRAM does not store a copy of contents of the second-level DRAM.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: August 15, 2017
    Assignee: Intel Corporation
    Inventors: Dannie G. Feekes, Shlomo Raikin, Blaise Fanning, Joydeep Ray, Julius Mandelblat, Ariel Berkovits, Eran Shifer, Zvika Greenfield, Evgeny Bolotin
  • Publication number: 20170212832
    Abstract: In an embodiment, a memory interface may send an indication that a request is being sent. The indication may be sent to a non-volatile memory via a point-to-point bus between a memory interface and the non-volatile memory. The memory interface may send the request to the non-volatile memory via the bus. The request may include an address that may be used to identify a location for storing or reading data. The non-volatile memory may acquire the request from the bus and process the request. After processing the request, the non-volatile memory may send an indication to the memory interface that indicates the non-volatile memory has a response to send to the memory interface. The memory interface may grant access to the bus to the non-volatile memory. After being granted access to the bus, the non-volatile memory may send the response to the memory interface.
    Type: Application
    Filed: January 2, 2017
    Publication date: July 27, 2017
    Inventors: Eng Hun Ooi, Robert J. Royer, Michael W. Williams, Jeffrey R. Wilcox, Ritesh B. Trivedi, Blaise Fanning
  • Patent number: 9703502
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: July 11, 2017
    Assignee: Intel Corporation
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Publication number: 20170177502
    Abstract: A method and apparatus are described for a shared LRU policy between cache levels. For example, one embodiment of the invention comprises: a level N cache to store a first plurality of entries; a level N+1 cache to store a second plurality of entries; the level N+1 cache to initially be provided with responsibility for implementing a least recently used (LRU) eviction policy for a first entry until receipt of a request for the first entry from the level N cache at which time the entry is copied from the level N+1 cache to the level N cache, the level N cache to then be provided with responsibility for implementing the LRU policy until the first entry is evicted from the level N cache, wherein upon being notified that the first entry has been evicted from the level N cache, the level N+1 cache to resume responsibility for implementing the LRU eviction policy with respect to the first entry.
    Type: Application
    Filed: December 19, 2015
    Publication date: June 22, 2017
    Inventors: DANIEL GREENSPAN, BLAISE FANNING, YOAV LOSSIN, ASAF RUBINSTEIN
  • Patent number: 9678666
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: June 13, 2017
    Assignee: INTEL CORPORATION
    Inventors: Blaise Fanning, Mark A. Schmisseur, Raymond S. Tetrick, Robert J. Royer, Jr., David B. Minturn, Shane Matthews
  • Publication number: 20170160987
    Abstract: The present disclosure relates to a memory system with main memory. The main memory includes first level main memory and second level main memory. The first level main memory is configured to store indirection information providing reference to physical memory units of the second level main memory. Further, the memory system includes a memory controller configured to initiate an access of a physical memory unit of the second level main memory using the indirection information stored in the first level main memory.
    Type: Application
    Filed: December 8, 2015
    Publication date: June 8, 2017
    Inventors: Robert J. Royer, JR., Blaise Fanning
  • Patent number: 9658978
    Abstract: In one embodiment, a system-on-chip (SoC) can be configured to receive a request from a master agent in a fabric coupled to the master agent, send a show command grant to the master agent responsive to selection of the request by the fabric, receive a command portion of a transaction corresponding to the request in the fabric and determine a target agent to receive the transaction based on the command portion, and thereafter send a transaction grant to the master agent for the transaction. Other embodiments are described and claimed.
    Type: Grant
    Filed: March 13, 2014
    Date of Patent: May 23, 2017
    Assignee: Intel Corporation
    Inventors: Sridhar Lakshmanamurthy, Mikal C. Hunsaker, Michael T. Klinglesmith, Blaise Fanning, Eran Tamari, Joseph Murray, Robert P. Adler