Patents by Inventor Blake Powell

Blake Powell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10910501
    Abstract: A device may include a P-N diode, formed within a SiC substrate. The device may include an N-type region formed within the SiC substrate, a P-type region, formed in an upper portion of the N-type region; and an implanted N-type layer, the implanted N-type layer being disposed between the P-type region and the N-type region.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: February 2, 2021
    Assignee: Monolith Semiconductor, Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Blake Powell, Sujit Banerjee
  • Publication number: 20200075780
    Abstract: A device may include a P-N diode, formed within a SiC substrate. The device may include an N-type region formed within the SiC substrate, a P-type region, formed in an upper portion of the N-type region; and an implanted N-type layer, the implanted N-type layer being disposed between the P-type region and the N-type region.
    Type: Application
    Filed: September 5, 2018
    Publication date: March 5, 2020
    Applicant: Monolith Semiconductor Inc.
    Inventors: Kevin Matocha, Kiran Chatty, Blake Powell, Sujit Banerjee