Abstract: A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber.