Patents by Inventor Blake W. Davis
Blake W. Davis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10384172Abstract: A thin film composite membrane includes an active layer on a support membrane, wherein the active layer includes at least two chemically distinct first and second crosslinked polyamide film sub-layers. The first film sub-layer includes a polyamide unit; and the second film sub-layer includes a copolyamide with two chemically distinct polyamide units. The first film sub-layer is closer to the support than is the second film sub-layer.Type: GrantFiled: February 6, 2017Date of Patent: August 20, 2019Assignees: International Business Machines Corporation, King Abdulaziz City for Science and Technology (KACST)Inventors: Radwan A. Alrasheed, Blake W. Davis, Jacquana T. Diep, Geraud J. Dubois, Young-Hye Na, Majed S. Nassar, Ankit Vora
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Publication number: 20170144113Abstract: A thin film composite membrane includes an active layer on a support membrane, wherein the active layer includes at least two chemically distinct first and second crosslinked polyamide film sub-layers. The first film sub-layer includes a polyamide unit; and the second film sub-layer includes a copolyamide with two chemically distinct polyamide units. The first film sub-layer is closer to the support than is the second film sub-layer.Type: ApplicationFiled: February 6, 2017Publication date: May 25, 2017Inventors: Radwan A. Alrasheed, Blake W. Davis, Jacquana T. Diep, Geraud J. Dubois, Young-Hye Na, Majed S. Nassar, Ankit Vora
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Patent number: 9561474Abstract: A thin film composite membrane includes an active layer on a support membrane, wherein the active layer includes at least two chemically distinct first and second crosslinked polyamide film sub-layers. The first film sub-layer includes a polyamide unit; and the second film sub-layer includes a copolyamide with two chemically distinct polyamide units. The first film sub-layer is closer to the support than is the second film sub-layer.Type: GrantFiled: June 7, 2012Date of Patent: February 7, 2017Assignee: International Business Machines CorporationInventors: Radwan A. Alrasheed, Blake W. Davis, Jacquana T. Diep, Geraud J. Dubois, Young-Hye Na, Majed S. Nassar, Ankit Vora
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Publication number: 20150189743Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.Type: ApplicationFiled: March 11, 2015Publication date: July 2, 2015Inventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Patent number: 9012587Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.Type: GrantFiled: April 12, 2013Date of Patent: April 21, 2015Assignee: International Business Machines CorporationInventors: Robert David Allen, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert Dennis Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Patent number: 8986596Abstract: A method of preparing particles comprises forming by optical lithography a topographic template layer disposed on a surface of a substrate, which is suitable for spin casting. The template layer comprises a non-crosslinked template polymer having a pattern of independent wells therein for molding independent particles. Spin casting a particle-forming composition onto the template layer forms a composite layer comprising the template polymer and the particles disposed in the wells. The composite layer is removed from the substrate using a stripping agent that dissolves the template polymer without dissolving the particles. The particles are then isolated.Type: GrantFiled: November 18, 2012Date of Patent: March 24, 2015Assignee: International Business Machines CorporationInventors: Joy Cheng, Daniel J. Coady, Matthew E. Colburn, Blake W. Davis, James L. Hedrick, Steven J. Holmes, Hareem T. Maune, Alshakim Nelson
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Patent number: 8946371Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.Type: GrantFiled: January 16, 2013Date of Patent: February 3, 2015Assignee: International Business Machines CorporationInventors: Phillip J. Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Jitendra S. Rathore, Ratnam Sooriyakumaran
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Publication number: 20140138863Abstract: A method of preparing particles comprises forming by optical lithography a topographic template layer disposed on a surface of a substrate, which is suitable for spin casting. The template layer comprises a non-crosslinked template polymer having a pattern of independent wells therein for molding independent particles. Spin casting a particle-forming composition onto the template layer forms a composite layer comprising the template polymer and the particles disposed in the wells. The composite layer is removed from the substrate using a stripping agent that dissolves the template polymer without dissolving the particles. The particles are then isolated.Type: ApplicationFiled: November 18, 2012Publication date: May 22, 2014Applicant: International Business Machines CorporationInventors: Joy Cheng, Daniel J. Coady, Matthew E. Colburn, Blake W. Davis, James L. Hedrick, Steven J. Holmes, Hareem T. Maune, Alshakim Nelson
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Publication number: 20130327714Abstract: A thin film composite membrane includes an active layer on a support membrane, wherein the active layer includes at least two chemically distinct first and second crosslinked polyamide film sub-layers. The first film sub-layer includes a polyamide unit; and the second film sub-layer includes a copolyamide with two chemically distinct polyamide units. The first film sub-layer is closer to the support than is the second film sub-layer.Type: ApplicationFiled: June 7, 2012Publication date: December 12, 2013Applicants: King Abdulaziz City for Science and Technology (KACST), International Business Machines CorporationInventors: Radwan A. Alrasheed, Blake W. Davis, Jacquana T. Diep, Geraud J. Dubois, Young-Hye Na, Majed S. Nassar, Ankit Vora
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Publication number: 20130292163Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.Type: ApplicationFiled: April 12, 2013Publication date: November 7, 2013Applicant: International Business Machines CorporationInventors: Robert David Allen, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert Dennis Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Patent number: 8431670Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.Type: GrantFiled: August 31, 2009Date of Patent: April 30, 2013Assignee: International Business Machines CorporationInventors: Robert David Allen, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert Dennis Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Patent number: 8426113Abstract: The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise ?- and ?-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the ?- and ?-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ?60 nm line/space.Type: GrantFiled: August 13, 2010Date of Patent: April 23, 2013Assignee: International Business Machines CorporationInventors: Luisa Dominica Bozano, Blake W. Davis, Alshakim Nelson, Jitendra Singh Rathore, Linda Karin Sundberg
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Publication number: 20120040289Abstract: The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise ?- and ?-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the ?- and ?-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ?60 nm line/space.Type: ApplicationFiled: August 13, 2010Publication date: February 16, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Luisa Dominica Bozano, Blake W. Davis, Alshakim Nelson, Jitendra Singh Rathore, Linda Karin Sundberg
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Patent number: 8029971Abstract: Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.Type: GrantFiled: March 13, 2008Date of Patent: October 4, 2011Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Patent number: 7944055Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.Type: GrantFiled: May 3, 2010Date of Patent: May 17, 2011Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
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Publication number: 20110083887Abstract: Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers.Type: ApplicationFiled: October 8, 2009Publication date: April 14, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert Dennis Miller, Alshakim Nelson, Jitendra Singh Rathore, Ratnam Sooriyakumaran
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Patent number: 7919225Abstract: A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C.Type: GrantFiled: May 23, 2008Date of Patent: April 5, 2011Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip Joe Brock, Blake W. Davis, Geraud Jean-Michel Dubois, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran
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Publication number: 20110048787Abstract: Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.Type: ApplicationFiled: August 31, 2009Publication date: March 3, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert David Allen, Phillip Joe Brock, Blake W. Davis, Qinghuang Lin, Robert Dennis Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Patent number: 7867689Abstract: A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.Type: GrantFiled: May 18, 2007Date of Patent: January 11, 2011Assignee: International Business Machines CorporationInventors: Robert D. Allen, Phillip Brock, Blake W. Davis, Qinghuang Lin, Robert D. Miller, Alshakim Nelson, Ratnam Sooriyakumaran
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Publication number: 20100207276Abstract: The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured.Type: ApplicationFiled: May 3, 2010Publication date: August 19, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Robert D. Allen, Phillip J. Brock, Blake W. Davis, Wu-Song S. Huang, Qinghuang Lin, Alshakim Nelson, Sampath Purushothaman, Ratnam Sooriyakumaran