Patents by Inventor Blaze J. Messer

Blaze J. Messer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Combined silicon oxide etch and contamination removal process
    Patent number: 8664012
    Abstract: A method of forming a semiconductor device. A substrate having first and second materials is provided, wherein the second material is occluded by the first material. The substrate is etched using a first non-plasma etch process that etches the first material at a higher rate relative to a rate of etching the second material. The first non-plasma etch process exposes the second material that is overlying at least a portion of the first material. The second material is then etched using a plasma containing a reactive gas, which exposes the at least a portion of the first material. The first material including the at least a portion of the first material that was exposed by etching the second material are etched using a second non-plasma etch process.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: March 4, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Richard H. Gaylord, Blaze J. Messer, Kaushik A. Kumar
  • COMBINED SILICON OXIDE ETCH AND CONTAMINATION REMOVAL PROCESS
    Publication number: 20130084654
    Abstract: A method of forming a semiconductor device. A substrate having first and second materials is provided, wherein the second material is occluded by the first material. The substrate is etched using a first non-plasma etch process that etches the first material at a higher rate relative to a rate of etching the second material. The first non-plasma etch process exposes the second material that is overlying at least a portion of the first material. The second material is then etched using a plasma containing a reactive gas, which exposes the at least a portion of the first material. The first material including the at least a portion of the first material that was exposed by etching the second material are etched using a second non-plasma etch process.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Applicant: Tokyo Electron Limited
    Inventors: Richard H. Gaylord, Blaze J. Messer, Kaushik A. Kumar