Abstract: A valid data merging method, a memory storage device and a memory control circuit unit are provided. The method includes: collecting a first valid data in a source unit according to a first logical-to-physical address mapping table recorded in a candidate information, and determining whether a first data amount of the first valid data is same as a second data amount of a valid data corresponding to a valid count of the source unit; in response to determining that they are the same, copying the first valid data to a target unit; and in response to determining that they are not the same, obtaining one or more second logical-to-physical address mapping table according to a management information of the source unit to collect a second valid data in the source unit, and copying the second valid data to the target unit.

Abstract: A memory management method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory management method includes: recording sorting information corresponding to a plurality of first physical units of the rewritable non-volatile memory module according to a data storage status of the first physical units; receiving at least one command, and the command is configured to change the data storage status of the first physical units; updating the sorting information according to the command; and copying data stored in at least one physical unit among the first physical units to at least one second physical unit of the rewritable non-volatile memory module according to the updated sorting information.

Abstract: A memory management method for a rewritable non-volatile memory module, a memory control circuit unit and a memory storage apparatus are provided. The rewritable non-volatile memory module includes a plurality of super physical units, and the super physical units at least include a plurality of good super physical units and a plurality of partial good super physical units. The method includes: receiving a host write command; selecting a first super physical unit set according a number rate of the good super physical units and the partial good super physical units, and the first super physical unit set includes a plurality of first good super physical units and at least one first partial good super physical unit selected from the super physical units according to the number rate; and writing data into the good physical erasing units of the first super physical unit set, in response to the host write command.

Abstract: A memory management method for a rewritable non-volatile memory module, a memory control circuit unit and a memory storage apparatus are provided. The rewritable non-volatile memory module includes a plurality of super physical units, and the super physical units at least include a plurality of good super physical units and a plurality of partial good super physical units. The method includes: receiving a host write command; selecting a first super physical unit set according a number rate of the good super physical units and the partial good super physical units, and the first super physical unit set includes a plurality of first good super physical units and at least one first partial good super physical unit selected from the super physical units according to the number rate; and writing data into the good physical erasing units of the first super physical unit set, in response to the host write command.

Abstract: A memory management method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory management method includes: recording sorting information corresponding to a plurality of first physical units of the rewritable non-volatile memory module according to a data storage status of the first physical units; receiving at least one command, and the command is configured to change the data storage status of the first physical units; updating the sorting information according to the command; and copying data stored in at least one physical unit among the first physical units to at least one second physical unit of the rewritable non-volatile memory module according to the updated sorting information.

Abstract: A data writing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a flush command counting (FCC) value, and updating the FCC value whenever receiving a flush command from a host system. The method further includes getting a first physical erasing unit as an active physical unit and determining whether the FCC value is greater than a FCC value threshold. The method further includes setting a writing mode of the active physical unit as a first writing mode if the FCC value is greater than the FCC value threshold, and setting the writing mode of the active physical unit as a second writing mode if the FCC value is not greater than the FCC value threshold.

Abstract: A data writing method, a memory control circuit unit and a memory storage device are provided. The method includes: receiving a first write command and writing data corresponding to the first write command into a buffer memory; and writing the data corresponding to the first write command from the buffer memory to at least one first physical programming unit of a first physical erasing unit by using a single page programming mode if a write cache function is disabled and the data of the first write command is stored into the buffer memory, in which the at least one first physical programming unit is constituted by a plurality of first memory cells and each of the first memory cells only stores one bit of data in the single page programming mode.

Abstract: A data writing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a flush command counting (FCC) value, and updating the FCC value whenever receiving a flush command from a host system. The method further includes getting a first physical erasing unit as an active physical unit and determining whether the FCC value is greater than a FCC value threshold. The method further includes setting a writing mode of the active physical unit as a first writing mode if the FCC value is greater than the FCC value threshold, and setting the writing mode of the active physical unit as a second writing mode if the FCC value is not greater than the FCC value threshold.