Abstract: Disclosed is a device for preparing a silicon carbide crystal including a crucible and a crystal expansion guide assembly. The crucible includes a crucible body and a crucible cover fixing a seed and covering the crucible body. The crystal expansion guide assembly includes a frame member and a tubular core member. The frame member is fixed to the crucible body, located between the crucible cover and a raw material accommodated in the crucible body, and provided with a through hole with a diameter greater than a diameter of a growth surface of the seed. The tubular core member is mechanically connected to an inner wall of the through hole. During a crystal growth process, the tubular core member falls off due to contact with a growth front of a crystal. The frame member does not react with the crystal. Thus, a large-sized crystal ingot with high quality can be obtained.

Abstract: Disclosed is a silicon carbide crystal growth system including a crucible, a heating device and a seed holder. The crucible includes a crucible body and a crucible cover covering the crucible body. The heating device includes a quartz tube and an induction coil spirally wound on an outer wall of the quartz tube. The crucible is disposed in the quartz tube. The crucible is disposed coaxially with the quartz tube. The seed holder is disposed on the crucible cover and includes a seed holding surface for holding an off-axis seed and is perpendicular to a central axis of the crucible, and an angle between a normal direction of the induction coil and a growth direction of the off-axis seed is between 0 degrees and 10 degrees, so that a silicon carbide crystal grows from the off-axis seed along isotherms provided by the induction coil, thereby obtaining a silicon carbide boule.

Abstract: Disclosed is a method for purifying a graphite material, which includes the following steps of: after placing the graphite material in a graphite crucible, placing the graphite crucible into a heating furnace; after vacuuming the heating furnace, filling the heating furnace with a protective atmosphere, and controlling a pressure in the heating furnace to be less than 5 Torr; and heating the graphite crucible, by a heater disposed in the heating furnace, to control a temperature of the graphite crucible to be at least higher than melting point temperatures of some metal impurities in the graphite material for a preset time period, so that the some metal impurities in the graphite material are volatilized or carbonized, and the graphite crucible is purified. Therefore, while the graphite material is purified under a condition with high vacuum, high temperature and low pressure, the graphite crucible is also purified.

Abstract: A signal processing method includes the following operations: receiving an input signal and analyzing the input signal to generate a plurality of bit codes by a signal receiving circuit; temporarily storing a first part of the plurality of bit codes according to a time sequence by a shift register and starting a decoder when the shift register is full; and performing a boundary calibration according to the first part of the plurality of bit codes by the decoder when the first part of the plurality of bit codes meets a decoding table rule and a boundary detection rule.

Abstract: The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3, and the first particle diameter is between 50 ?m and 350 ?m; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal sili

Abstract: The present disclosure provides high-purity semi-insulating single-crystal silicon carbide wafer and crystal which include one polytype single crystal. The semi-insulating single-crystal silicon carbide wafer has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}-3.

Abstract: A signal processing method includes the following operations: receiving an input signal and analyzing the input signal to generate a plurality of bit codes by a signal receiving circuit; temporarily storing a first part of the plurality of bit codes according to a time sequence by a shift register and starting a decoder when the shift register is full; and performing a boundary calibration according to the first part of the plurality of bit codes by the decoder when the first part of the plurality of bit codes meets a decoding table rule and a boundary detection rule.

Abstract: A wiring board includes a photosensitive insulating layer and a first wiring layer. The photosensitive insulating layer has a hole, a first surface and a second surface opposite to each other. The hole has a first end opening formed in the first surface, a second end opening formed in the second surface, an axis, and a sidewall surrounding the axis. Part of the sidewall extends toward the axis to form at least one annular flange. The first wiring layer is disposed on the first surface and includes a first pad, in which the hole exposes the first pad. There is at least one recessed cavity between the annular flange and the first pad. The minimum width of the annular flange is smaller than the maximum width of the recessed cavity.

Abstract: A signal processor includes a signal receiving circuit, a pre-processing circuit, a period acquisition circuit, and a decoding circuit. The signal receiving circuit is configured to receive an input signal. The pre-processing circuit is configured to generate a square wave signal according to the input signal. The period acquisition circuit is configured to capture several periods of the square wave signal. The several signal periods includes several signal period groups, and each of the several signal period groups includes at least two signal periods of the several signal periods. The at least two signal periods are adjacent to each other. The decoding circuit is coupled to the period acquisition circuit and is configured to perform decoding according to a time length and a number of times of voltage value change of the several signal period groups to obtain a decoding result.

Abstract: A signal processor includes a signal receiving circuit, a pre-processing circuit, a period acquisition circuit, and a decoding circuit. The signal receiving circuit is configured to receive an input signal. The pre-processing circuit is configured to generate a square wave signal according to the input signal. The period acquisition circuit is configured to capture several periods of the square wave signal. The several signal periods includes several signal period groups, and each of the several signal period groups includes at least two signal periods of the several signal periods. The at least two signal periods are adjacent to each other. The decoding circuit is coupled to the period acquisition circuit and is configured to perform decoding according to a time length and a number of times of voltage value change of the several signal period groups to obtain a decoding result.

Abstract: A wiring board includes a photosensitive insulating layer and a first wiring layer. The photosensitive insulating layer has a hole, a first surface and a second surface opposite to each other. The hole has a first end opening formed in the first surface, a second end opening formed in the second surface, an axis, and a sidewall surrounding the axis. Part of the sidewall extends toward the axis to form at least one annular flange. The first wiring layer is disposed on the first surface and includes a first pad, in which the hole exposes the first pad. There is at least one recessed cavity between the annular flange and the first pad. The minimum width of the annular flange is smaller than the maximum width of the recessed cavity.

Abstract: The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3, and the first particle diameter is between 50 ?m and 350 ?m; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal sili

Abstract: The present disclosure provides high-purity semi-insulating single-crystal silicon carbide wafer and crystal which include one polytype single crystal. The semi-insulating single-crystal silicon carbide wafer has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}-3.

Abstract: The present disclosure provides semi-insulating single-crystal silicon carbide bulk material and powder which include one polytype single crystal. The semi-insulating single-crystal silicon carbide bulk material has silicon vacancy inside, wherein the silicon-vacancy concentration is greater than 5E11 cm{circumflex over (?)}?3.

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.

Abstract: A composite substrate structure includes a circuit substrate, a first anisotropic conductive film, a first glass substrate, a dielectric layer, a patterned circuit layer and a conductive via. The first anisotropic conductive film is disposed on the circuit substrate. The first glass substrate is disposed on the first anisotropic conductive film and has a first surface and a second surface opposite to the first surface. The first glass substrate includes a first circuit layer, a second circuit layer and at least one first conductive via. The first circuit layer is disposed on the first surface. The second circuit layer is disposed on the second surface. The first conductive via penetrates the first glass substrate and is electrically connected to the first circuit layer and the second circuit layer. The first glass substrate and the circuit substrate are respectively located on two opposite sides of the first anisotropic conductive film.

Abstract: A composite substrate structure includes a circuit substrate, a first anisotropic conductive film, a first glass substrate, a dielectric layer, a patterned circuit layer and a conductive via. The first anisotropic conductive film is disposed on the circuit substrate. The first glass substrate is disposed on the first anisotropic conductive film and has a first surface and a second surface opposite to the first surface. The first glass substrate includes a first circuit layer, a second circuit layer and at least one first conductive via. The first circuit layer is disposed on the first surface. The second circuit layer is disposed on the second surface. The first conductive via penetrates the first glass substrate and is electrically connected to the first circuit layer and the second circuit layer. The first glass substrate and the circuit substrate are respectively located on two opposite sides of the first anisotropic conductive film.

Abstract: A device for growing large-sized monocrystalline crystals, including a crucible adapted to grow crystals from a material source and with a seed crystal and including therein a seed crystal region, a growth chamber, and a material source region; a thermally insulating material disposed outside the crucible and below a heat dissipation component; and a plurality of heating components disposed outside the thermally insulating material to provide heat sources, wherein the heat dissipation component is of a heat dissipation inner diameter and a heat dissipation height which exceeds a thickness of the thermally insulating material.

Abstract: A method of producing a carbide raw material includes the steps of (A) providing a porous carbon material and a high-purity silicon raw material or a metal raw material and applying the porous carbon material and the high-purity silicon raw material or a metal raw material alternately to form a layer structure; (B) putting the layer structure in a synthesis furnace to undergo a gas evacuation process; and (C) producing a carbide raw material with a synthesis reaction which the layer structure undergoes in an inert gas atmosphere, wherein the carbide raw material is a carbide powder of a particle diameter of less than 300 ?m, thereby preventing secondary raw material contamination otherwise arising from comminution, oxidation and acid rinsing.