Abstract: A device includes first and second gate structures respectively extending across the first and second fins, and a gate isolation plug between a longitudinal end of the first gate structure and a longitudinal end of the second gate structure. The gate isolation plug comprises a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer has an upper portion and a lower portion below the upper portion. The upper portion has a thickness smaller than a thickness of the lower portion of the first dielectric layer.

Abstract: A system and methods of forming a dielectric material within a trench are described herein. In an embodiment of the method, the method includes introducing a first precursor into a trench of a dielectric layer, such that portions of the first precursor react with the dielectric layer and attach on sidewalls of the trench. The method further includes partially etching portions of the first precursor on the sidewalls of the trench to expose upper portions of the sidewalls of the trench. The method further includes introducing a second precursor into the trench, such that portions of the second precursor react with the remaining portions of the first precursor to form the dielectric material at the bottom of the trench.

Abstract: A display device and a signal source switching method therefore are provided. The display device is connected with a first signal source device and a second signal source device and includes a switching circuit, a receiver circuit and a control circuit. The switching circuit includes a first connection port and a second connection port, which are respectively connected to the first signal source device and the second signal source device. When the control circuit receives a signal source switching command, the control circuit records a current operating state of each of the first signal source device and the second signal source device. When the control circuit receives an active source command from the first signal source device, the control circuit refers to the current operating state to control the switching circuit to switch the image signal source to the first signal source device or the second signal source device.

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode layer on the p-type semiconductor layer, and patterning the gate electrode layer to form a gate electrode. Preferably, the gate electrode includes an inclined sidewall.

Abstract: A fan includes an impeller and a frame. The frame is used for accommodating the impeller. The frame includes a plurality of static blade groups. Each of the static blade groups has a plurality of static blades. Moreover, at least one first static blade of a first static blade group and at least one first static blade of a second static blade group are symmetric with respect to a central axis of the frame.

Abstract: A fan assembly including a housing, a supporting member, a driving device and a passive impeller. The supporting member is disposed in the housing, and the driving device is disposed on the supporting member. The passive impeller includes a first hub and a plurality of first passive blades encircling the first hub. The active impeller includes a second hub and a plurality of active blades encircling the second hub and actuated to rotate by the driving device. In an axial direction, the first hub is disposed between the driving device and the second hub, and through rotation of the active impeller, airflow is produced which actuates the passive impeller to rotate.

Abstract: A fan includes a fan frame, a motor and an impeller. The motor is disposed in the frame. The impeller is connected with the motor and driven by the motor. The impeller includes a hub, an inner blade and an outer blade. The hub has a first surface facing the motor and a second surface facing away from the motor. The inner blade is disposed on the first surface, and the outer blade is disposed on the second surface.

Abstract: A fan includes an impeller and a frame. The frame is used for accommodating the impeller. The frame includes a plurality of static blade groups. Each of the static blade groups has a plurality of static blades. Moreover, at least one first static blade of a first static blade group and at least one first static blade of a second static blade group are symmetric with respect to a central axis of the frame.

Abstract: A fan assembly includes a housing, a first frame, a second frame, at least one driving device, a supporting device, an active impeller and a passive impeller. The housing has an air-flowing channel, and the first frame and second frame are disposed at opposite sites of the air-flowing channel. The driving device is disposed on the first frame and actuates the active impeller to rotate. The supporting device is disposed on the second frame and has the passive impeller thereon. The passive impeller is propelled by the airflow generated by the active impeller.

Abstract: A fan includes a fan frame, a motor and an impeller. The motor is disposed in the frame. The impeller is connected with the motor and driven by the motor. The impeller includes a hub, an inner blade and an outer blade. The hub has a first surface facing the motor and a second surface facing away from the motor. The inner blade is disposed on the first surface, and the outer blade is disposed on the second surface.

Abstract: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h ?m and the distribution density of the protuberance on the second surface is d cm?2, wherein 9.87×107?h2d, and h?1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.

Abstract: A light emitting diode including a GaN substrate, a first type semiconductor layer, a light emitting layer, a second type semiconductor layer, a first electrode, and a second electrode is provided. The GaN substrate has a first surface and a second surface opposite thereto, and the second surface has a plurality of protuberances, the height of the protuberance is h ?m and the distribution density of the protuberance on the second surface is d cm?2, wherein 9.87×107?h2d, and h?1.8. The first type semiconductor is disposed on the first surface of the GaN substrate. The light emitting layer is disposed on a partial region of the first semiconductor layer, and the wavelength of the light emitted by the light emitting layer is from 375 nm to 415 nm. The second semiconductor layer is disposed on the light emitting layer.

Abstract: A fan assembly including a housing, a supporting member, a driving device and a passive impeller. The supporting member is disposed in the housing, and the driving device is disposed on the supporting member. The passive impeller includes a first hub and a plurality of first passive blades encircling the first hub. The active impeller includes a second hub and a plurality of active blades encircling the second hub and actuated to rotate by the driving device. In an axial direction, the first hub is disposed between the driving device and the second hub, and through rotation of the active impeller, airflow is produced which actuates the passive impeller to rotate.

Abstract: An impeller structure includes a hub, a plurality of blades, and a plurality of reinforcing ribs. The blades are extended from the hub, and the reinforcing ribs are disposed annularly and separately between the blades. The strength of the impeller structure is improved by the reinforcing ribs, and the interference between the inner and outer flow fields of the blades is reduced by the reinforcing ribs. Also, a fan including above-mentioned impeller structure is disclosed.

Abstract: A fan assembly includes a housing, a first frame, a second frame, at least one driving device, a supporting device, an active impeller and a passive impeller. The housing has an air-flowing channel, and the first frame and second frame are disposed at opposite sites of the air-flowing channel. The driving device is disposed on the first frame and actuates the active impeller to rotate. The supporting device is disposed on the second frame and has the passive impeller thereon. The passive impeller is propelled by the airflow generated by the active impeller.