Abstract: This application relates to the field of communication technologies, and provides an information transmission method and an apparatus. The information transmission method includes: A transmit device generates a PPDU of a 320 MHz bandwidth, where some or all fields of the PPDU are rotated in the 320 MHz bandwidth based on a rotation factor sequence, the 320 MHz bandwidth includes sixteen 20 MHz sub-channels, the rotation factor sequence includes 16 rotation factors, and each 20 MHz sub-channel corresponds to one rotation factor. The transmit device sends the PPDU.

Abstract: A showerhead comprises first, second, and third components. The first component includes a disc-shaped portion and a cylindrical portion extending perpendicularly from the disc-shaped portion. The disc-shaped portion includes first and second sets of holes having first and second diameters, respectively, that extend from a center of the disc-shaped portion to an inner diameter of the cylindrical portion. The second component is disc-shaped and is attached to the disc-shaped portion of the first component, defines a plenum that is in fluid communication with the second set of holes, and includes a pair of arc-shaped grooves along a periphery and on opposite ends of the top surface and a plurality of grooves extending between the pair of arc-shaped grooves. The third component is disc-shaped, is attached to the second component, and includes a gas inlet connected to the plenum, and fluid inlet and outlet connected to the arc-shaped grooves.

Abstract: The embodiments of this application provides a cyclic shift diversity sequence-based communication method. In the method, a first communication apparatus generates a physical layer protocol data unit (PPDU) and sends the PPDU to a second communication apparatus. The PPDU includes a short training field (STF), a long training field (LTF), and a data field that are determined based on a cyclic shift diversity (CSD) sequence. After receiving the PPDU from the first communication apparatus, the second communication apparatus performs processing based on the PPDU. The CSD sequence includes L elements. L is a maximum number of spatial streams supported by the first communication apparatus and the second communication apparatus. The maximum number of spatial streams is greater than or equal to 16.

Abstract: This application discloses a signal processing method and an apparatus. The method includes: A transmit device generates a PPDU, where the PPDU includes a preamble, the preamble includes an LTF, the LTF includes a plurality of LTF symbols, and the plurality of LTF symbols may be used to carry a sequence obtained according to a first matrix; and then sends the PPDU. Correspondingly, a receive device receives the PPDU, and then processes, according to the first matrix, signals received on the plurality of LTF symbols. The first matrix is a Pn×n matrix, or the first matrix is obtained according to a Pn×n matrix, where Pn×n×Pn×nT=n×I, I is an identity matrix, the Pn×n matrix includes n rows and n columns, the Pn×nT matrix is a transpose matrix of the Pn×n matrix, and n is an integer greater than 8.

Abstract: In some examples, a method for conditioning a wafer processing chamber comprises setting a pressure in the chamber to a predetermined pressure range, setting a temperature of the chamber to a predetermined temperature, and supplying a process gas mixture to a gas distribution device within the chamber. A plasma is struck within the chamber and a condition in the chamber is monitored. Based on a detection of the monitored condition meeting or transgressing a threshold value, a chamber conditioning operation is implemented. The chamber conditioning operation may include depositing a preconditioning film onto an internal surface of the chamber, depositing a silicon oxycarbide (SiCO) film onto the preconditioning film, and depositing a protective layer onto the SiCO film.

Abstract: In a communication method, a first access point (AP) in a first AP multi-link device generates a management frame that includes a capability information field. The capability information field includes first indication information indicating whether a second AP, which is also in the first AP multi-link device, has performed a channel switch. The first AP then sends the management frame to a first station (STA).

Abstract: An apparatus for forming a plasma may include one or more coupling ports to accept and RF current. The apparatus may additionally include a receptacle to accommodate one or more gases, in which the receptacle is oriented along a first axis. The apparatus may additionally include an RF coupling structure, oriented in a plane and substantially surrounding the receptacle, the RF coupling structure can be configured to conduct an RF current to bring about formation of the plasma within the receptacle. The apparatus may further include one or more linkages, coupled to the RF coupling structure, which may permit the plane of the RF coupling structure to pivot about a second axis so as to tilt the plane of the RF coupling structure toward the first axis.

Abstract: A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

Abstract: The present invention relates to the technical field of detection of the appearance of electronic components, and in particular to a method for detecting the appearance of six sides of a chip multi-layer ceramic capacitor based on artificial intelligence. In the method for detecting the appearance of six sides of a chip multi-layer ceramic capacitor based on artificial intelligence as provided by the present invention, a picture is automatically divided, by AI, into regions which are then classified, and extracted features are judged by conventional algorithms. It is more flexible to deal with various defects. Defect missing is avoided, and the false rate is reduced.

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

Abstract: Embodiments of categorizing fractures in a subsurface formation are provided herein. One embodiment comprises obtaining at least one borehole image for a plurality of fractures in a subsurface formation and at least one resistivity log for the plurality of fractures of the surface formation. The embodiment comprises determining first aperture data based on the at least one borehole image for the plurality of fractures and determining second aperture data based on the at the least one resistivity log for the plurality of fractures. The embodiment comprises comparing the first aperture data based on the at least one borehole image and the second aperture data based on at least one resistivity log to determine whether to categorize each fracture of the plurality of fractures as a naturally occurring fracture or a non-naturally occurring fracture. The embodiment comprises generating an output indicating the categorization of each fracture and displaying the output.

Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

Abstract: A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

Abstract: In one embodiment, the disclosed subject matter is a method to produce a substantially uniform, silicon-carbide layer over both dielectric materials and metal materials. In one example, the method includes forming a silicon-nitride layer over the dielectric materials and the metal materials, and forming the silicon carbide layer over the silicon-nitride layer. Other methods are disclosed.

Abstract: A device providing intelligent assistance in mobility for disabled people and others includes a mobility device and a lifting device detachably mounted on the mobility device. The lifting device includes a base frame, a retractable bracket structure, several wheels, a sitting pad, and a backrest. The wheels are mounted on a lower surface of the base frame and drive the lifting device to move. The retractable bracket structure is mounted on an upper surface of the base frame. The sitting pad is detachably mounted on the retractable bracket structure, and the backrest is rotatably mounted on the retractable bracket structure.

Abstract: A method for image generation and colorization includes displaying a drawing board interface; obtaining semantic labels of an image to be generated based on user input on the drawing board interface, each semantic label indicating a content of a region in the image to be generated; obtaining a color feature of the image to be generated; and automatically generating the image using a generative adversarial network (GAN) model according to the semantic labels and the color feature. The color feature is a latent vector input to the GAN model.

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.