Patents by Inventor Bo Hoon Han

Bo Hoon Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for isolating extracellular vesicles
    Patent number: 12330155
    Abstract: The present invention relates to a method for isolating extracellular vesicles comprising: preparing a microfluidic chip in which at least two microfluidic channels are formed and inlets and outlets are formed at both ends of the channels, respectively; injecting at least one aqueous solution into the inlet of the microfluidic chip to form a microfluid; injecting a sample containing extracellular vesicles into the inlet of the microfluidic chip; and recovering the fluid from the outlet of the microfluidic chip.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: June 17, 2025
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji Yoon Kang, Bo Hoon Han, You Hee Heo, Kyeong Sik Shin
  • NOVEL METHOD FOR ISOLATING EXTRACELLULAR VESICLES
    Publication number: 20200188918
    Abstract: The present invention relates to a method for isolating extracellular vesicles comprising: preparing a microfluidic chip in which at least two microfluidic channels are formed and inlets and outlets are formed at both ends of the channels, respectively; injecting at least one aqueous solution into the inlet of the microfluidic chip to form a microfluid; injecting a sample containing extracellular vesicles into the inlet of the microfluidic chip; and recovering the fluid from the outlet of the microfluidic chip.
    Type: Application
    Filed: November 13, 2019
    Publication date: June 18, 2020
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji Yoon KANG, Bo Hoon HAN, You hee HEO, Kyeong Sik SHIN
  • Method for preparing polycrystalline aluminum oxynitride having enhanced transparency
    Patent number: 9321688
    Abstract: Disclosed is a method for preparing polycrystalline aluminum oxynitride having enhanced transparency, and preparing polycrystalline aluminum oxynitride by sintering a powder mixture of Al2O3 and AlN under atmospheric pressure, wherein the content of AlN is set to 17 to 26 mol %, a first sintering is performed at 1,575° C. to 1,675° C. so as to enable raw-material powders to have a relative density of 95% or higher, and a second sintering is performed so as to enable the raw-material powders to have a higher relative density.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: April 26, 2016
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YEUNGNAM UNIVERSITY
    Inventors: Jae Hyung Lee, Ji Hye Kim, Bo Hoon Han, In Chul Jung
  • METHOD FOR PREPARING POLYCRYSTALLINE ALUMINUM OXYNITRIDE HAVING ENHANCED TRANSPARENCY
    Publication number: 20130337993
    Abstract: Disclosed is a method for preparing polycrystalline aluminum oxynitride having enhanced transparency, and preparing polycrystalline aluminum oxynitride by sintering a powder mixture of Al2O3 and AlN under atmospheric pressure, wherein the content of AlN is set to 17 to 26 mol %, a first sintering is performed at 1,575° C. to 1,675° C. so as to enable raw-material powders to have a relative density of 95% or higher, and a second sintering is performed so as to enable the raw-material powders to have a higher relative density.
    Type: Application
    Filed: February 28, 2012
    Publication date: December 19, 2013
    Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION YEUNGNAM UNIVERSITY
    Inventors: Jae Hyung Lee, Ji Hye Kim, Bo Hoon Han, In Chul Jung