Patents by Inventor Bo-Hsien Wu

Bo-Hsien Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240429454
    Abstract: A solid-state lithium battery includes a solid electrolyte layer, a first electrode layer structure, a second electrode layer structure, a first collector layer and a second collector layer. The first electrode layer structure includes a first buffer electrolyte layer and a first microporous electrode layer. The first buffer electrolyte layer is located between the first microporous electrode layer and the first surface of the solid electrolyte layer. The first buffer electrolyte layer is embedded with the first surface of the solid electrolyte layer. The second electrode layer structure is disposed on the second surface of the solid electrolyte layer. The first microporous electrode layer is disposed between the first collector layer and first buffer electrolyte layer. The second electrode layer structure is disposed between the second collector layer and the second surface of the solid electrolyte layer.
    Type: Application
    Filed: August 15, 2023
    Publication date: December 26, 2024
    Inventors: TIEN-HSIANG HSUEH, SHANG-EN LIU, MIN-CHUAN WANG, TING-KUEI TSAI, YU-LIN YEH, YU-CHEN LI, BO-HSIEN WU
  • Patent number: 11830986
    Abstract: A quantum battery manufacturing method includes: providing a p-type semiconductor substrate including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; providing an n-type semiconductor substrate including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery. The electricity storage layer is formed by heating a thermoplastic polymer to soften and become a liquid, mixing the liquid with energized core-shell particles, and coating a substrate with the mixture. Core-shell particles are disposed on a conductive substrate and irradiated with ultraviolet rays for energization.
    Type: Grant
    Filed: September 2, 2020
    Date of Patent: November 28, 2023
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C.
    Inventors: Min-Chuan Wang, Bo-Hsien Wu, Shang-En Liu
  • Patent number: 11658341
    Abstract: A method for manufacturing a gel-state flame-retardant electrolyte film includes the steps of: preparing a first solution having a high boiling-point solvent; adding a solid-state polymer material into the first solution, and performing a heating and stirring process to form a second solution; adding a flame-retardant electrolyte material and a flame-retardant water-absorbent material into the second solution for forming a third solution by well mixing; forming the third solution into a viscous matter; and, solidifying the viscous matter to form the gel-state flame-retardant electrolyte film. In addition, a gel-state flame-retardant electrolyte film, a gel-state electrolyte battery and a method for manufacturing the gel-state electrolyte battery are also provided.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: May 23, 2023
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C
    Inventors: Tien-Hsiang Hsueh, Shang-En Liu, Min-Chuan Wang, Bo-Hsien Wu, Shu-Mei Chang
  • Publication number: 20210408611
    Abstract: A quantum battery manufacturing method includes: providing a p-type semiconductor substrate including a first conductive substrate and a p-type semiconductor layer disposed on one surface of the first conductive substrate; providing an n-type semiconductor substrate including a second conductive substrate and an n-type semiconductor layer disposed on one surface of the second conductive substrate; and forming an electricity storage layer between the p-type semiconductor substrate and the n-type semiconductor substrate, and attaching two sides of the electricity storage layer respectively to the p-type semiconductor layer and the n-type semiconductor layer to form a quantum battery. The electricity storage layer is formed by heating a thermoplastic polymer to soften and become a liquid, mixing the liquid with energized core-shell particles, and coating a substrate with the mixture. Core-shell particles are disposed on a conductive substrate and irradiated with ultraviolet rays for energization.
    Type: Application
    Filed: September 2, 2020
    Publication date: December 30, 2021
    Inventors: MIN-CHUAN WANG, BO-HSIEN WU, SHANG-EN LIU
  • Publication number: 20210359341
    Abstract: A method for manufacturing a gel-state flame-retardant electrolyte film includes the steps of: preparing a first solution having a high boiling-point solvent; adding a solid-state polymer material into the first solution, and performing a heating and stirring process to form a second solution; adding a flame-retardant electrolyte material and a flame-retardant water-absorbent material into the second solution for forming a third solution by well mixing; forming the third solution into a viscous matter; and, solidifying the viscous matter to form the gel-state flame-retardant electrolyte film. In addition, a gel-state flame-retardant electrolyte film, a gel-state electrolyte battery and a method for manufacturing the gel-state electrolyte battery are also provided.
    Type: Application
    Filed: July 6, 2020
    Publication date: November 18, 2021
    Inventors: Tien-Hsiang Hsueh, Shang-En Liu, Min-Chuan Wang, Bo-Hsien Wu, Shu-Mei Chang
  • Publication number: 20100166214
    Abstract: An electronic apparatus at least including an audio-receiving circuit is provided. The audio-receiving circuit includes an audio receiver and a processor. The audio receiver receives a sound wave from a sound source, and generates a first audio signal containing a plurality of noises to the processor. The processor performs a signal processing of time reversal to the first audio signal to restore a sound sent at an original sound source, so as to filter noises in the first audio signal and output a second audio signal.
    Type: Application
    Filed: June 9, 2009
    Publication date: July 1, 2010
    Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, NCKU RESEARCH & DEVELOPMENT FOUNDATION
    Inventors: Hsin-Li Lee, Gee-Pinn Too, Yu-Hao Hsieh, Chih-Hao Chou, Bo-Hsien Wu