Abstract: A semiconductor memory device includes a memory cell array, a tag information register, a refresh control circuit and a DQ pin. The memory cell array includes multiple memory cells divided into first cells and second cells according to corresponding data retention times. The tag information register stores refresh cycle information for each wordline connected to the first cells and the second cells. The refresh control circuit is configured to generate a refresh enable signal and a refresh address based on the refresh cycle information. The DQ pin is configured to output the refresh enable signal, the refresh address and data stored in the memory cell array.

Abstract: A semiconductor memory device includes a memory cell array, a tag information register, a refresh control circuit and a DQ pin. The memory cell array includes multiple memory cells divided into first cells and second cells according to corresponding data retention times. The tag information register stores refresh cycle information for each wordline connected to the first cells and the second cells. The refresh control circuit is configured to generate a refresh enable signal and a refresh address based on the refresh cycle information. The DQ pin is configured to output the refresh enable signal, the refresh address and data stored in the memory cell array.

Abstract: A multi-chip package structure can include a first package that includes a first circuit board that includes a lower surface including a first circuit pattern thereon and an upper surface, that is opposite the lower surface, and includes an upper pad layer thereon. The multi-chip package structure can further include at least one processor chip that is mounted on the lower surface of the first circuit board. A second package can be mounted on the first package and can include a second circuit board including an upper surface that includes a second circuit pattern thereon and a lower surface, which is opposite the upper surface, which can includes a lower pad layer thereon that is electrically connected to the upper pad layer of the first circuit board. At least one memory chip can be laminated and molded on the upper surface of the second package.