Abstract: A high-bandwidth package-on-package (HBPoP) structure includes a first package structure and a second package structure disposed over the first package structure. The first package structure includes a first package substrate, a semiconductor die, an interposer, and a molding material. The first package substrate is formed of a silicon and/or ceramic material. The semiconductor die is disposed over the first package substrate. The interposer is disposed over the semiconductor die and is formed of a silicon and/or ceramic material. The molding material is disposed between the first package substrate and the interposer and surrounds the semiconductor die.

Abstract: A semiconductor package includes a bottom substrate and a top substrate space apart from the bottom substrate such that the bottom substrate and the top substrate define a gap therebetween. A logic die is mounted on a top surface of the bottom substrate. The logic die has a thickness of 125-350 micrometers. A plurality of copper cored solder balls is disposed between the bottom substrate and the top substrate around the logic die to electrically connect the bottom substrate with the top substrate. A sealing resin fills into the gap between the bottom substrate and the top substrate and sealing the logic die and the plurality of copper cored solder balls in the gap.

Abstract: A semiconductor package structure includes a package substrate, a semiconductor die, an interposer, an adhesive layer, and a molding material. The semiconductor die is disposed over the package substrate. The interposer is disposed over the semiconductor die. The adhesive layer connects the semiconductor die and the interposer. The molding material surrounds the semiconductor die and the adhesive layer.

Abstract: A semiconductor package includes a substrate; a die mounted on a top surface of the substrate in a flip-chip fashion; and a lid mounted on the die and on a perimeter of the substrate. The lid includes a cover plate and four walls formed integral with the cover plate. A liquid-cooling channel is situated between the cover plate of the lid and a rear surface of the die for circulating a coolant relative to the semiconductor package.

Abstract: A semiconductor device includes a substrate, an electronic component, a cover, a heat conduction component and a dam. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The heat conduction component is disposed between the electronic component and the cover. The dam is disposed between the electronic component and the cover and surrounds the heat conduction component.

Abstract: An integrated circuit (IC) configurable to perform adaptive thermal ceiling control in a per-functional-block manner, an associated main circuit, an associated electronic device and an associated thermal control method are provided. The IC may include a plurality of hardware circuits arranged to perform operations of a first functional block, and at least one thermal control circuit. At least one temperature sensor is coupled with the first functional block to detect temperature and to generate at least one temperature sensing result of the first functional block.

Abstract: A semiconductor package includes a substrate; a die mounted on a top surface of the substrate in a flip-chip fashion; and a lid mounted on the die and on a perimeter of the substrate. The lid includes a cover plate and four walls formed integral with the cover plate. A liquid-cooling channel is situated between the cover plate of the lid and a rear surface of the die for circulating a coolant relative to the semiconductor package.

Abstract: A semiconductor assembly package is provided. The semiconductor package assembly includes a system-on-chip (SOC) package, a memory package and a heat spreader. The SOC package includes a logic die and a first substrate. The logic die has pads on it. The first substrate is electrically connected to the logic die by the pads. The memory package includes a second substrate and a memory die. The second substrate has a top surface and a bottom surface. The memory die is mounted on the top surface of the second substrate and is electrically connected to the second substrate using bonding wires. The heat spreader is disposed between the SOC package and the memory package, wherein the heat spreader is in contact with a back surface of the logic die away from the pads.

Abstract: A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The liquid metal is formed between the cover and the electronic component.

Abstract: A semiconductor device includes a bottom package, a top package stacked on the bottom package, and an interposer disposed between the bottom package and the top package. The top package is electrically connected to the interposer through a plurality of peripheral solder balls. At least a dummy thermal feature is disposed on the interposer and surrounded by the plurality of peripheral solder balls.

Abstract: A semiconductor package includes a substrate; a die mounted on a top surface of the substrate in a flip-chip fashion; and a lid mounted on the die and on a perimeter of the substrate. The lid includes a cover plate and four walls formed integral with the cover plate. A liquid-cooling channel is situated between the cover plate of the lid and a rear surface of the die for circulating a coolant relative to the semiconductor package.