Abstract: A method for forming a shallow trench isolation layer that includes: forming a pad oxide on a substrate; forming a hard mask silicon nitride on the pad oxide; forming a moat pattern on the pad oxide and hard mask; etching partially the pad oxide and hard mask with the moat pattern to open the silicon nitride; and ashing process for removing the moat pattern.

Abstract: A method for finishing a metal line for a semiconductor device is disclosed, in which polymer generated when forming the metal line including aluminum and its alloy is effectively removed and the metal line is prevented from being eroded. A chlorine radical and a chlorine compound remaining on a surface of the metal line are removed using H2O plasma and the polymer is removed using H2O gas and HF gas not plasma. Therefore, it is possible to improve reliability and yield of the semiconductor device.

Abstract: An example method of manufacturing a semiconductor device having a capacitor includes sequentially depositing a lower metal layer, an insulating layer and an upper metal layer on a semiconductor substrate, removing a first photoresist pattern by using O2/N2 plasma, and removing polymer existing on the lower metal layer by using H2O/CF4 plasma. According to one example, the capacitor may include a lower electrode film, the capacitor insulating film and the upper electrode film.