Patents by Inventor Bo-Kuai LAI

Bo-Kuai LAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HALL EFFECT SENSOR WITH LOW OFFSET AND HIGH LEVEL OF STABILITY
    Publication number: 20240099159
    Abstract: A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.
    Type: Application
    Filed: November 21, 2023
    Publication date: March 21, 2024
    Inventors: David Daughton, Patrick Gleeson, Bo-Kuai Lai, Daniel Hoy
  • Hall effect sensor with low offset and high level of stability
    Patent number: 11864470
    Abstract: A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.
    Type: Grant
    Filed: February 24, 2023
    Date of Patent: January 2, 2024
    Assignee: Lake Shore Cryotronics, Inc.
    Inventors: David Daughton, Patrick Gleeson, Bo-Kuai Lai, Daniel Hoy
  • HALL EFFECT SENSOR WITH LOW OFFSET AND HIGH LEVEL OF STABILITY
    Publication number: 20230217838
    Abstract: A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.
    Type: Application
    Filed: February 24, 2023
    Publication date: July 6, 2023
    Inventors: David Daughton, Patrick Gleeson, Bo-Kuai Lai, Daniel Hoy
  • Hall effect sensor with low offset and high level of stability
    Patent number: 11605778
    Abstract: A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.
    Type: Grant
    Filed: February 7, 2020
    Date of Patent: March 14, 2023
    Assignee: Lake Shore Cryotronics, Inc.
    Inventors: David Daughton, Patrick Gleeson, Bo-Kuai Lai, Daniel Hoy
  • HALL EFFECT SENSOR WITH LOW OFFSET AND HIGH LEVEL OF STABILITY
    Publication number: 20200259073
    Abstract: A magnetic field magnetic field sensor and method of making the sensor. The sensor and method of making the sensor may comprise a material or structure that prevents the admission of light in certain wavelengths to enhance the stability of the magnetic field sensor over a period of time. The sensor and method of making the sensor may comprise an adsorption prevention layer which protects the semiconductor portion of the magnetic. The sensor may also comprise an insulating layer formed between semiconductor layers and a substrate layer.
    Type: Application
    Filed: February 7, 2020
    Publication date: August 13, 2020
    Inventors: David Daughton, Patrick Gleeson, Bo-Kuai Lai, Daniel Hoy
  • NANOLAMINATES OF Al2O3/TiO2 WITH GIANT DIELECTRIC CONSTANT LOW-LEAKAGE-LOW LOSS-EXTENDED FREQUENCY OPERATION FOR NEW-GENERATION NANOELECTRONICS AND ENERGY STORAGE DEVICES
    Publication number: 20130264680
    Abstract: The invention relates generally to a nanolaminate structure involving Al2O3 thin films as a main component. The nanolaminate is used between a top electrode and a bottom electode to form a capacitor. The naonolaminate layer comprises alternating layers of Al2O3 and TiO2 and an interfacial layer.
    Type: Application
    Filed: April 5, 2012
    Publication date: October 10, 2013
    Inventors: Orlando H. AUCIELLO, Bo-Kuai LAI, Geunhee LEE, Ram S. KATIYAR