Abstract: The present invention relates to an antigen-binding molecule comprising a heavy chain variable region comprising a heavy-chain complementarity-determining region 1 (HCDR1) comprising an amino acid sequence represented by Sequence No. 1, an HCDR2 comprising an amino acid sequence represented by Sequence No. 2, and an HCDR3 comprising an amino acid sequence represented by Sequence No. 3; a light-chain variable region comprising a light-chain complementarity-determining region 1 (LCDR1) comprising an amino acid sequence represented by Sequence No. 4, an LCDR2 comprising an amino acid sequence represented by Sequence No. 5, and an LCDR3 comprising an amino acid sequence represented by Sequence No. 6; wherein the antigen-binding molecule is a T cell receptor (TCR); and to a cell line expressing the same.

Abstract: A display device includes a substrate including a first display area including main pixels and a second display area including auxiliary pixels and transmissive portions; a camera module under the substrate to overlap the second display area in a thickness direction and including an image sensor; a control circuit board on the substrate and including a timing controller; and a main processor which provides an image signal to the timing controller. The camera module is directly connected to the control circuit board through a connection unit.

Abstract: A display device includes a display panel having a display region, and including a light transmission region overlapping an electronic element within an edge portion of the display region, and a panel driver configured to drive the display panel, and configured to perform an edge-dimming operation that gradually decreases a luminance of an area of the display region excluding the light transmission region from a center portion of the display region to the edge portion of the display region while not decreasing a luminance of the light transmission region.

Abstract: A convertible electronic device includes a display module including a first region and a second region surrounding the first region and having a lower light transmittance than the first region; a camera module disposed on the display module to overlap the first region; a first housing which accommodates the display module therein, and includes a camera module accommodating portion protruding outwardly to overlap the camera module; a keyboard; a second housing which accommodates the keyboard therein; and a hinge member connecting the first housing to the second housing rotatably to each other with respect to a rotation shaft. The first and second housings are in a first folded state where the first and second housings overlap each other to allow front surfaces to face each other or in a second folded state where the first and second housings overlap each other to allow rear surfaces to face each other.

Abstract: A display device includes a substrate including a first display area including main pixels and a second display area including auxiliary pixels and transmissive portions; a camera module under the substrate to overlap the second display area in a thickness direction and including an image sensor; a control circuit board on the substrate and including a timing controller; and a main processor which provides an image signal to the timing controller. The camera module is directly connected to the control circuit board through a connection unit.

Abstract: A convertible electronic device includes a display module including a first region and a second region surrounding the first region and having a lower light transmittance than the first region; a camera module disposed on the display module to overlap the first region; a first housing which accommodates the display module therein, and includes a camera module accommodating portion protruding outwardly to overlap the camera module; a keyboard; a second housing which accommodates the keyboard therein; and a hinge member connecting the first housing to the second housing rotatably to each other with respect to a rotation shaft. The first and second housings are in a first folded state where the first and second housings overlap each other to allow front surfaces to face each other or in a second folded state where the first and second housings overlap each other to allow rear surfaces to face each other.

Abstract: A display device includes a display panel having a display region, and including a light transmission region overlapping an electronic element within an edge portion of the display region, and a panel driver configured to drive the display panel, and configured to perform an edge-dimming operation that gradually decreases a luminance of an area of the display region excluding the light transmission region from a center portion of the display region to the edge portion of the display region while not decreasing a luminance of the light transmission region.

Abstract: A display device integrated with a sensor includes a first substrate and a second substrate disposed while facing each other, and having exposed ends at different sides thereof, a sealing material configured to seal an overlapping region between the first and second substrates, a display unit including a plurality of pixels provided in a sealed region inside the sealing material, a sensor electrode unit formed on the second substrate, a first pad unit formed in an exposed part of the first substrate, and a second pad unit formed in an exposed part of the second substrate.

Abstract: An organic light emitting display device, including a substrate, a first conductive layer pattern on the substrate, a first insulation layer pattern on the first conductive layer pattern, a first semiconductor layer pattern on the first insulation layer pattern, a gate insulation layer pattern on the gate insulation layer pattern, a gate electrode on the gate insulation layer pattern, a planarization layer on the gate electrode, the planarization layer including a first protruding portion protruded in a first direction perpendicular to an upper surface of the substrate, a lower electrode on the first protruding portion, a pixel defining layer exposing at least a portion of the lower electrode, the pixel defining layer covering opposite side portions of the first protruding portion, a light emitting layer on the lower electrode, and an upper electrode on the light emitting layer.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

Abstract: An organic light emitting display device, including a substrate, a first conductive layer pattern on the substrate, a first insulation layer pattern on the first conductive layer pattern, a first semiconductor layer pattern on the first insulation layer pattern, a gate insulation layer pattern on the gate insulation layer pattern, a gate electrode on the gate insulation layer pattern, a planarization layer on the gate electrode, the planarization layer including a first protruding potion protruded in a first direction perpendicular to an upper surface of the substrate, a lower electrode on the first protruding portion, a pixel defining layer exposing at least a portion of the lower electrode, the pixel defining layer covering opposite side portions of the first protruding portion, a light emitting layer on the lower electrode, and an upper electrode on the light emitting layer.

Abstract: A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.

Abstract: A display device integrated with a sensor includes a first substrate and a second substrate disposed while facing each other, and having exposed ends at different sides thereof, a sealing material configured to seal an overlapping region between the first and second substrates, a display unit including a plurality of pixels provided in a sealed region inside the sealing material, a sensor electrode unit formed on the second substrate, a first pad unit formed in an exposed part of the first substrate, and a second pad unit formed in an exposed part of the second substrate.

Abstract: An organic light emitting diode display includes: a substrate including a first and a second gate electrode formed over a first and a second region, respectively, a first and a second gate insulator formed on the first and the second gate electrode, respectively, a first and a second semiconductor layer formed on the first and the second gate insulator, respectively, the first semiconductor layer including a first channel region, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first and a second etching stop layer formed over the first and second channel regions, respectively, and surrounded by the interlayer insulator, and a first and a second source electrode and a first and a second drain electrode contacting the first and the second semiconductor layer, respectively, through the interlayer insulator.

Abstract: A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Abstract: A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.