Abstract: An organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and an emitting material layer including a first compound and a second compound and positioned between the first and second electrodes. An energy level of the first compound and an energy level of the second compound satisfy a pre-determined condition. An organic light emitting device may include the organic light emitting diode.

Abstract: An organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and an emitting material layer including a first compound and a second compound and positioned between the first and second electrodes. An energy level of the first compound and an energy level of the second compound satisfy a pre-determined condition. Further, an organic light emitting device may include the organic light emitting diode.

Abstract: An organic compound, an organic light emitting diode including the compound, and an organic light emitting device including the organic light emitting diode are disclosed. The organic compound may include a fused hetero aromatic moiety having a p-type property and an aza-acridine moiety having an n-type property bonded to the fused hetero aromatic moiety via an aromatic or a hetero aromatic linker. The organic compound has relatively high energy level since it includes plural fused hetero aromatic rings. Holes and electrons can be recombined in an emitting material layer in a balanced manner since the organic compound has a bipolar property. The organic light emitting diode and the organic light emitting device including the organic compound have enhanced luminous efficiency and luminous lifetime.

Abstract: An organic light emitting diode including at least one emitting material layer, which includes a host and a dopant and at least one exciton energy control layer disposed adjacently to the at least one emitting material layer and an organic light emitting device having the same is disclosed. The at least one exciton energy control layer includes an organic compound that has excited state singlet and triplet energy levels lower than excited state singlet and triplet energy levels of the host. The organic light emitting diode can enhance its luminous efficiency and its luminous lifetime by incorporating one or more exciton energy control layers.

Abstract: An organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and an organic emitting layer between the first and second electrodes. The organic emitting layer includes a first emitting part between the first and second electrodes, a second emitting part between the first emitting part and the second electrode, and a charge generation layer between the first emitting part and the second emitting part. The charge generation layer includes an n-type charge generation layer between the first emitting part and the second emitting part, and a p-type charge generation layer between the n-type charge generation layer and the second emitting part. The p-type charge generation layer has a multi-layered structure, where an organic charge generation material layer and an inorganic charge generation material layer are alternately stacked.

Abstract: Discussed is an organic compound of Formula 1 and an organic light emitting diode and an OLED device including the organic compound. In the organic compound, Ar1 is a heteroaryl group comprising a nitrogen atom, and Ar2 is a C6 to C30 aryl group, and R is a C1 to C10 alkyl group. The organic compound may be included in an emitting material layer of the organic light emitting diode as a host such that an emitting efficiency and a lifespan of the organic light emitting diode and the OLED device are improved.

Abstract: The present disclosure provides a compound of following formula and an organic light emitting device and an organic light emitting display device including the compound. The compound of the present disclosure serves as a host or a dopant in an emitting material layer.

Abstract: An organic light emitting diode including a plurality delayed fluorescent materials with specific energy levels and an organic light emitting device including the diode is disclosed. When the plurality delayed fluorescent materials with specific energy levels are applied in an emitting material layer, it is possible to minimize the energy loss or exciton quenching during luminous process and to prevent the diode from reducing life span caused by the exciton quenching. When the emitting material layer includes other luminous material having a narrow FWHM, the organic light emitting diode can enhance its color purity.

Abstract: The present disclosure relates to an organic light emitting diode including an emitting material layer that has a host and two different delayed fluorescent materials whose energy levels are controlled and an organic light emitting device including the diode. Exciton energy is transferred from a first delayed fluorescent dopant to a second delayed fluorescent dopant, which has singlet and triplet energy levels lower than singlet and triplet energy levels of the first delayed fluorescent dopant and a narrow FWHM (full-width at half maximum) compared to the first delayed fluorescent dopant so that efficient light emission can be realized.

Abstract: The present invention provides an organic compound for an organic light emitting diode. The organic compound is represented by: The organic compound is capable of reducing a driving voltage of an organic light emitting diode by an excellent charge transporting property. The present invention also provides an organic light emitting diode and an organic light emitting display device including the organic compound.

Abstract: An organic light emitting diode comprises an emitting material layer implementing a delayed fluorescence and another emitting material layer disposed adjacently to the emitting material layer and implementing fluorescence or phosphorescence and an organic light emitting device including the diode. As exciton generated in the plural emitting material layer drops to a ground state through the luminous materials each of which has a controlled energy level, it is possible to implement excellent luminous efficiency derived from a delayed fluorescent material and improved color purity derived from a fluorescent or phosphorescent material having narrow FWHM.

Abstract: The present disclosure provides an organic emitting compound of the following Formula, and an organic light emitting diode, which includes a first electrode; a second electrode facing the first electrode; and a first emitting material layer positioned between the first electrode and the second electrode and including a first host and the organic emitting compound, and an organic light emitting display device including the organic light emitting diode.

Abstract: The present disclosure provides a space-through charge transfer compound of following formula and an organic light emitting diode and an organic light emitting display device including the space-through charge transfer compound.

Abstract: The present disclosure provides a space-through charge transfer compound of following formula and an organic light emitting diode and an organic light emitting display device including the space-through charge transfer compound.

Abstract: The present invention provides an organic compound for an organic light emitting diode. The organic compound is represented by: The organic compound is capable of reducing a driving voltage of an organic light emitting diode by an excellent charge transporting property. The present invention also provides an organic light emitting diode and an organic light emitting display device including the organic compound.

Abstract: The present invention provides a phosphorescent compound of following formula: wherein each of X1 and X2 is independently selected from substituted or non-substituted carboline, dibenzofuran, dibenzothiophene and fluorene.

Abstract: A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.

Abstract: A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.

Abstract: A method for fabricating a semiconductor device, including forming gate patterns over a substrate, forming conductive layer covering top and sidewalls of each gate pattern, forming a metal layer for a silicidation process over the conductive layer, and silicifying the conductive layer and the gate patterns using the metal layer.

Abstract: A semiconductor device including a conductive layer, a diffusion barrier layer formed over the conductive layer, including a refractory metal compound, and acquired after a surface treatment, and a metal silicide layer formed over the diffusion barrier layer. The adhesion between a diffusion barrier layer and a metal silicide layer may be improved by increasing the surface energy of the diffusion barrier layer through a surface treatment. Therefore, although the metal silicide layer is fused in a high-temperature process, it is possible to prevent a void from being caused at the interface between the diffusion barrier layer and the metal silicide layer. Moreover, it is possible to increase the adhesion between a conductive layer and the diffusion barrier layer by increasing the surface energy of the conductive layer through the surface treatment.