Abstract: The present disclosure provides a hydrocracking catalyst, a method for preparing the same and a use of the same, and a method for hydrocracking catalytic diesel oil. The catalyst comprises a support, an active metal component, and carbon, wherein, based on the total weight of the catalyst, the content of the support is 60 to 90 wt %, the content of the active metal component calculated in metal oxides is 15 to 40 wt %, and the content of carbon calculated in C element is 1 to 5 wt %; measured with an infrared acidimetric estimation method, the acid properties of the hydrocracking catalyst are: the total infrared acid amount is 0.4 to 0.8 mmol/g, wherein, the infrared acid amount of strong acid with desorption temperature greater than 350° C. is 0.08 mmol/g or lower, and the ratio of the total infrared acid amount to the infrared acid amount of strong acid with desorption temperature greater than 350° C. is 5 to 50.

Abstract: A printed circuit board comprises a base, a circuit layer, a circuit layer, a first insulating layer, and a second insulating layer. The circuit layer is on the base. The first insulating layer has a pattern, the first insulating layer is fixed on the base. The pattern of the first insulating layer matches a pattern of the circuit layer. The second insulating layer is laminated on the circuit layer and the first insulating layer. Openings are defined in the second insulating layer, the circuit layer is exposed from the openings.

Abstract: Materials and methods for modulating activity of kinases such as AMPK and mTOR via the deubiquitinase, USP10, are provided herein. Also provided are materials and methods for treating clinical conditions mediated at least in part by such kinases, including obesity, diabetes, metabolic syndrome, and some cancers.

Abstract: The present invention discloses a modified Y molecular sieve, a preparation method and a use of the modified Y molecular sieve, a supported catalyst, and a hydrocracking method. The silica-alumina mole ratio in the surface layer of the modified Y molecular sieve is 20-100:1, and the silica-alumina mole ratio in the body phase of the modified Y molecular sieve is 8-30:1. When a hydrocracking catalyst prepared from the modified Y molecular sieve is used for hydrocracking, the hydrocracking catalyst has higher reactivity and higher nitrogen tolerance. The hydrocracking catalyst prepared from the modified Y molecular sieve is suitable for use for increasing the yield of diesel oil, increasing the yield of chemical materials, and catalyzed hydrogenation conversion of diesel oil, etc.

Abstract: A circuit board comprises a third conductive circuit layer, a third insulating layer, a first insulating layer, a first conductive circuit layer, a substrate, a second conductive circuit layer, a second insulating layer, a fourth insulating layer, and a fourth conductive circuit layer in that order from top to bottom. The circuit board defines at least one first conductive hole and at least one second conductive hole. Each one of the first conductive hole comprises a first conductive blind hole, and a third conductive blind hole aligned with and electrically connected to the first conductive blind hole. Each one of the second conductive hole comprises a second conductive blind hole, and a fourth conductive blind hole aligned with and electrically connected to the second conductive blind hole. A method for making the circuit board is also provided.

Abstract: A manufacturing method for strip casting 550 MPa-grade high strength atmospheric corrosion-resistant steel strip, comprising the following steps: 1) smelting, where the chemical composition of a molten steel is that: C is between 0.03-0.08%, Si?0.4%, Mn is between 0.6-1.5%, P is between 0.07-0.22%, S?0.01%, N?0.012%, Cu is between 0.25-0.8%, Cr is between 0.3-0.8%, and Ni is between 0.12-0.4%, additionally, also comprised is at least one micro-alloying element among Nb, V, Ti, and Mo, where Nb is between 0.01-0.08%, V is between 0.01-0.08%, Ti is between 0.01-0.08%, and Mo is between 0.1-0.4%, and where the remainder is Fe and unavoidable impurities; 2) strip casting, where a 1-5 mm-thick cast strip is casted directly; 3) cooling the strip, where the cooling rate is greater than 20° C./s; 4) online hot rolling the cast strip, where the hot rolling temperature is between 1050-1250° C.

Abstract: In one embodiment, a bi-directional punch-through semiconductor device can include: a first transistor in a first region of a semiconductor substrate of a first conductivity type, where the first transistor includes a semiconductor buried layer of a second conductivity type in the semiconductor substrate, and a first epitaxy region of an epitaxy semiconductor layer above the semiconductor buried layer, the semiconductor buried layer being configured as a base of the first transistor; and a second transistor coupled in parallel with the first transistor, where the second transistor is in a second region of the semiconductor substrate of the first conductivity type, where the second transistor comprises a second epitaxy region of the epitaxy semiconductor layer above the semiconductor substrate, and a first doped region of the second conductivity type in the second epitaxy region, the first doped region being configured as a base of the second transistor.

Abstract: A low capacitance transient voltage suppressor is disclosed. The transient voltage suppressor comprises a first diode with a first anode thereof coupled to an I/O port. A first cathode of the first diode and a second cathode of a second diode are respectively coupled to two ends of a resistor. A second anode of the second diode is coupled to a low-voltage terminal. A third anode and a third cathode of a third diode are respectively coupled to the second cathode and the resistor. The third diode induces a third parasitic capacitance smaller than a first capacitance of the first diode and a second parasitic capacitance of the second diode, and the third parasitic capacitance in series with the first and second parasitic capacitances dominate a small capacitance in a path during normal operation.

Abstract: A manufacturing method for strip casting 700 MPa-grade high strength atmospheric corrosion-resistant steel, comprising the following steps: 1) smelting, where the chemical composition of a molten steel in terms of weight percentage is that C is between 0.03-0.1%, Si?0.4%, Mn is between 0.75-2.0%, P is between 0.07-0.22%, S?0.01%, N?0.012%, Cu is between 0.25-0.8%, Cr is between 0.3-0.8%, and Ni is between 0.12-0.4%, additionally, also comprised is at least one micro-alloying element among Nb, V, Ti, and Mo, where Nb is between 0.01-0.1%, V is between 0.01-0.1%, Ti is between 0.01-0.1%, and Mo is between 0.1-0.5%, and where the remainder is Fe and unavoidable impurities; 2) strip casting, where a 1-5 mm-thick cast strip is casted directly; 3) cooling the cast strip, where the cooling rate is greater than 20° C./s; 4) online hot rolling the cast strip, where the hot rolling temperature is between 1050-1250° C.

Abstract: In one embodiment, a bi-directional punch-through semiconductor device can include: a first transistor in a first region of a semiconductor substrate of a first conductivity type, where the first transistor includes a semiconductor buried layer of a second conductivity type in the semiconductor substrate, and a first epitaxy region of an epitaxy semiconductor layer above the semiconductor buried layer, the semiconductor buried layer being configured as a base of the first transistor; and a second transistor coupled in parallel with the first transistor, where the second transistor is in a second region of the semiconductor substrate of the first conductivity type, where the second transistor comprises a second epitaxy region of the epitaxy semiconductor layer above the semiconductor substrate, and a first doped region of the second conductivity type in the second epitaxy region, the first doped region being configured as a base of the second transistor.

Abstract: In one embodiment, a bi-directional punch-through semiconductor device can include: a first transistor in a first region of a semiconductor substrate of a first conductivity type, where the first transistor includes a semiconductor buried layer of a second conductivity type in the semiconductor substrate, and a first epitaxy region of an epitaxy semiconductor layer above the semiconductor buried layer, the semiconductor buried layer being configured as a base of the first transistor; and a second transistor coupled in parallel with the first transistor, where the second transistor is in a second region of the semiconductor substrate of the first conductivity type, where the second transistor comprises a second epitaxy region of the epitaxy semiconductor layer above the semiconductor substrate, and a first doped region of the second conductivity type in the second epitaxy region, the first doped region being configured as a base of the second transistor.

Abstract: The present disclosure provides a hydrocracking catalyst, a method for preparing the same and a use of the same, and a method for hydrocracking catalytic diesel oil. The catalyst comprises a support, an active metal component, and carbon, wherein, based on the total weight of the catalyst, the content of the support is 60 to 90 wt %, the content of the active metal component calculated in metal oxides is 15 to 40 wt %, and the content of carbon calculated in C element is 1 to 5 wt %; measured with an infrared acidimetric estimation method, the acid properties of the hydrocracking catalyst are: the total infrared acid amount is 0.4 to 0.8 mmol/g, wherein, the infrared acid amount of strong acid with desorption temperature greater than 350° C. is 0.08 mmol/g or lower, and the ratio of the total infrared acid amount to the infrared acid amount of strong acid with desorption temperature greater than 350° C. is 5 to 50.

Abstract: A parkour wheeled boot for increasing moving speed, having self-balancing function, wearable on a respective leg of a user. Each boot has a wearing mechanism, a shock reduction mechanism, a drive mechanism, a motion transmission mechanism, a power mechanism and a control mechanism. The wearable mechanism has a pedal, a pedal fixation rack, calf supporting plates, and magnetic pieces or belt and buckle. The shock reduction mechanism has a spring seat, springs and a cover. The drive mechanism has a motor having a hollowed center, and also an inner wall of a bearing. The motion transmission mechanism has an outer wall of the bearing, a wheel hub, and a rubber tire. The power mechanism has batteries, battery smart protection control board, ports and connection wires. The control mechanism is a single board unit with microprocessor, angular speed sensor, acceleration sensor, pressure sensor and relevant electronic components.

Abstract: A skill performance evaluation system for determining skill performance metrics for a user. The skill performance evaluation system generates a user profile for a user having a particular craft, provides a set of evaluation rules for the craft and determines one or more skill performance metrics based on the set of evaluation rules. In addition, the skill performance evaluation system provides a set of depreciation rules for the craft and determines one or more skill performance metrics for the user. The system may modify the one or more skill performance metrics upon receiving a skill retire indicator or a feedback acknowledgement indicator and a revised dynamic depreciation rate.

Abstract: A method, device and system for network security protection comprise: according to a received scan task, a network security device performs a security bug scan of the scan task appointed web site, and when a scan result is obtained, transmits the scan result to a network application firewall, so that the network application firewall can configure a individuality security strategy for the web site according to the received scan result. The problem that it can not he implemented complete individuality security configuration of the web site can be solved in this way.

Abstract: In one embodiment, a bi-directional punch-through semiconductor device can include: a first transistor in a first region of a semiconductor substrate of a first conductivity type, where the first transistor includes a semiconductor buried layer of a second conductivity type in the semiconductor substrate, and a first epitaxy region of an epitaxy semiconductor layer above the semiconductor buried layer, the semiconductor buried layer being configured as a base of the first transistor; and a second transistor coupled in parallel with the first transistor, where the second transistor is in a second region of the semiconductor substrate of the first conductivity type, where the second transistor comprises a second epitaxy region of the epitaxy semiconductor layer above the semiconductor substrate, and a first doped region of the second conductivity type in the second epitaxy region, the first doped region being configured as a base of the second transistor.

Abstract: The present invention discloses a modified Y molecular sieve, a preparation method and a use of the modified Y molecular sieve, a supported catalyst, and a hydrocracking method. The silica-alumina mole ratio in the surface layer of the modified Y molecular sieve is 20-100:1, and the silica-alumina mole ratio in the body phase of the modified Y molecular sieve is 8-30:1. When a hydrocracking catalyst prepared from the modified Y molecular sieve is used for hydrocracking, the hydrocracking catalyst has higher reactivity and higher nitrogen tolerance. The hydrocracking catalyst prepared from the modified Y molecular sieve is suitable for use for increasing the yield of diesel oil, increasing the yield of chemical materials, and catalyzed hydrogenation conversion of diesel oil, etc.

Abstract: A low capacitance transient voltage suppressor is disclosed. The transient voltage suppressor comprises a first diode with a first anode thereof coupled to an I/O port. A first cathode of the first diode and a second cathode of a second diode are respectively coupled to two ends of a resistor. A second anode of the second diode is coupled to a low-voltage terminal. A third anode and a third cathode of a third diode are respectively coupled to the second cathode and the resistor. The third diode induces a third parasitic capacitance smaller than a first capacitance of the first diode and a second parasitic capacitance of the second diode, and the third parasitic capacitance in series with the first and second parasitic capacitances dominate a small capacitance in a path during normal operation.

Abstract: A window management method, apparatus and a computing device are provided. The window management apparatus comprises a window rendering management device for managing the at least two windows in response to an input operation, to change the size and location of a target window of the at least two windows to which the input operation is directed, and simultaneously adaptively change the size and location of at least one other window of the at least two windows. With the embodiments of the present invention, upon detection of an input operation, a window control operation can be performed on at least two opened windows to change the sizes and locations of at least two opened windows simultaneously. In this way, a plurality of windows can be managed collectively by fewer operations, and the required numbers of user operations can be reduced.

Abstract: A manufacturing method for strip casting 550 MPa-grade high strength atmospheric corrosion-resistant steel strip, comprising the following steps: 1) smelting, where the chemical composition of a molten steel is that: C is between 0.03-0.08%, Si?0.4%, Mn is between 0.6-1.5%, P is between 0.07-0.22%, S?0.01%, N?0.012%, Cu is between 0.25-0.8%, Cr is between 0.3-0.8%, and Ni is between 0.12-0.4%, additionally, also comprised is at least one micro-alloying element among Nb, V, Ti, and Mo, where Nb is between 0.01-0.08%, V is between 0.01-0.08%, Ti is between 0.01-0.08%, and Mo is between 0.1-0.4%, and where the remainder is Fe and unavoidable impurities; 2) strip casting, where a 1-5 mm-thick cast strip is casted directly; 3) cooling the strip, where the cooling rate is greater than 20° C./s; 4) online hot rolling the cast strip, where the hot rolling temperature is between 1050-1250° C.