Abstract: Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.

Abstract: Disclosed is a stock account/order/market price inquiry service method using a mobile terminal that is able to perform a stock account/order/market price inquiry service through a mobile terminal using a stock chip. A stock account/order/market price inquiry service method comprising the steps of: (1) displaying a lower menu page on a mobile terminal of the stock account/order service after a PIN authentication; (2) generating an account/order service request message on the basis of stock chip information read from a stock chip and service request information corresponding to the lower menu and then transmitting the same to a relay server; and (3) receiving a service response message corresponding to service request message from the relay server and displaying the same on the screen of a mobile terminal.

Abstract: Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.

Abstract: Semiconductor devices and methods to form a contact of a semiconductor device are disclosed. An example method to form a contact includes forming an insulating layer on a substrate; etching the insulating layer to form a contact hole; depositing a silicon layer on sidewalls and an undersurface of the contact hole; forming a silicon spacer on the sidewalls of the contact hole by etching the silicon layer; transforming the silicon spacer to a silicon nitride spacer; depositing a diffusion barrier on the silicon nitride spacer; and filling the contact hole with tungsten. Because the silicon nitride spacer formed on the sidewalls of the contact hole can serve as a leakage current blocking layer, the yield and the reliability of the semiconductor devices manufactured by this example process are enhanced.