Patents by Inventor BO-SHIANG WANG

BO-SHIANG WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diode device and method for manufacturing the same
    Patent number: 9640672
    Abstract: A diode device including a III-N compound layer is provided. The III-N compound layer has a channel region therein. A cathode region is located on the III-N compound layer. A first anode region is located on the III-N compound layer and extends into the III-N compound layer. The bottom of the first anode region is under the channel region. A second anode region is located on the III-N compound layer between the cathode region and the first anode region, and extends into the III-N compound material layer. The second anode region includes a high-energy barrier region. The high-energy barrier region adjoins a sidewall of the first anode region. A method for manufacturing a diode device is also provided.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: May 2, 2017
    Assignees: National Central University, Delta Electronics, Inc.
    Inventors: Jen-Inn Chyi, Bo-Shiang Wang, Chun-Chieh Yang, Geng-Yen Lee
  • DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20160315204
    Abstract: A diode device including a III-N compound layer is provided. The III-N compound layer has a channel region therein. A cathode region is located on the III-N compound layer. A first anode region is located on the III-N compound layer and extends into the III-N compound layer. The bottom of the first anode region is under the channel region. A second anode region is located on the III-N compound layer between the cathode region and the first anode region, and extends into the III-N compound material layer. The second anode region includes a high-energy barrier region. The high-energy barrier region adjoins a sidewall of the first anode region. A method for manufacturing a diode device is also provided.
    Type: Application
    Filed: February 10, 2016
    Publication date: October 27, 2016
    Inventors: JEN-INN CHYI, BO-SHIANG WANG, CHUN-CHIEH YANG, GENG-YEN LEE