Patents by Inventor Bo-Tsung TSAI
Bo-Tsung TSAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230197762Abstract: A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region. The pixel further includes a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.Type: ApplicationFiled: January 9, 2023Publication date: June 22, 2023Inventor: Bo-Tsung TSAI
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Patent number: 11581360Abstract: A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes a photosensitive device comprising a plurality of first regions, wherein each of the plurality of first regions is in the bulk and the protrusion.Type: GrantFiled: October 27, 2020Date of Patent: February 14, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Bo-Tsung Tsai
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Patent number: 11557626Abstract: A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a floating diffusion node in the protrusion. The pixel further includes a gate structure over the bulk, wherein a top surface of the gate structure is above a top surface of the floating diffusion node. The pixel further includes a photosensitive device in the bulk. The pixel further includes an isolation well surrounding the photosensitive device.Type: GrantFiled: March 25, 2021Date of Patent: January 17, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Bo-Tsung Tsai
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Publication number: 20220359601Abstract: A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.Type: ApplicationFiled: July 22, 2022Publication date: November 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Bo-Tsung Tsai
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Patent number: 11437422Abstract: A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.Type: GrantFiled: June 1, 2020Date of Patent: September 6, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Bo-Tsung Tsai
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Publication number: 20220262843Abstract: A method for fabricating an image sensor is provided. The method includes doping a bottom portion of a semiconductor substrate with a first dopant to form a light-sensitive element in the bottom portion of the semiconductor substrate; etching a top portion of the semiconductor substrate to form a post structure on the light-sensitive element; forming a gate structure on at least one sidewall of the post structure, wherein the gate structure exposes a first part of the bottom portion of the semiconductor substrate; doping the exposed first part of the bottom portion of the semiconductor substrate with a second dopant to form a pinning layer on the light-sensitive element, wherein the second dopant has a conductivity type opposite that of the first dopant; and forming a contact on the post structure.Type: ApplicationFiled: May 6, 2022Publication date: August 18, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Bo-Tsung TSAI
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Patent number: 11329094Abstract: A device includes a substrate, a pinning region in the substrate and having a first doping type, a photodiode in the substrate and having a doped region that has a second doping type opposite to the first doping type, and a first conductive contact. The doped region of the photodiode has a first portion below the pinning region and a second portion extending upwards from a top of the first portion of the doped region of the photodiode to a top of the substrate, and the second portion of the doped region of the photodiode is surrounded by the pinning region. The first conductive contact is disposed over and in contact with the second portion of the doped region of the photodiode.Type: GrantFiled: June 1, 2020Date of Patent: May 10, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Bo-Tsung Tsai
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Patent number: 11282707Abstract: A method includes: receiving a first wafer; defining a first zone and a second zone on the first wafer and a plurality of first areas; defining a plurality of first areas and second areas for the first and second zones, respectively; projecting first ion beams onto the first areas and receiving first thermal waves in response to the first ion beams; rotating the first wafer by a twist angle; projecting second ion beams onto the second areas and receiving second thermal waves in response to the second ion beams; and estimating a first crystalline orientation angle of the first wafer based on the first and second ion beams and the first and second thermal waves.Type: GrantFiled: April 7, 2020Date of Patent: March 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventor: Bo-Tsung Tsai
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Publication number: 20220085083Abstract: A device includes a substrate, a light sensitive element, a pinning region, a lightly-doped region, a floating node, and a gate stack. The light sensitive element is in the substrate. The pinning region is in the substrate and is over the light sensitive element. The lightly-doped region is laterally adjacent the pinning region. The floating node is in the pinning region, the floating node being spaced from and surrounded by the lightly-doped region. A first portion of the pinning region is between the floating node and the lightly-doped region. The gate stack is over the first portion of the pinning region.Type: ApplicationFiled: November 22, 2021Publication date: March 17, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Bo-Tsung TSAI
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Patent number: 11205674Abstract: A method includes forming a light-sensitive element in a substrate. The substrate is doped with a first dopant to form a pinning region over a first portion of the light-sensitive element. A second portion of the light-sensitive element is surrounded by the pinning region. A first contact is formed in contact with the second portion of the light-sensitive element, and a second contact is formed over the pinning region.Type: GrantFiled: November 25, 2019Date of Patent: December 21, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Bo-Tsung Tsai
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Patent number: 11183532Abstract: A device includes a substrate, a light sensitive element, a pinning region, a lightly-doped region, a floating node, and a gate stack. The light sensitive element is in the substrate. The pinning region is in the substrate and is over the light sensitive element. The lightly-doped region is in the pinning region. The floating node is in the pinning region. The floating node is spaced from and is surrounded by the lightly-doped region. A first portion of the pinning region between the floating node and the lightly-doped region forms a channel region. A gate stack is over the channel region.Type: GrantFiled: November 25, 2019Date of Patent: November 23, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Bo-Tsung Tsai
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Publication number: 20210210545Abstract: A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a floating diffusion node in the protrusion. The pixel further includes a gate structure over the bulk, wherein a top surface of the gate structure is above a top surface of the floating diffusion node. The pixel further includes a photosensitive device in the bulk. The pixel further includes an isolation well surrounding the photosensitive device.Type: ApplicationFiled: March 25, 2021Publication date: July 8, 2021Inventor: Bo-Tsung TSAI
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Publication number: 20210074759Abstract: A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes a photosensitive device comprising a plurality of first regions, wherein each of the plurality of first regions is in the bulk and the protrusion.Type: ApplicationFiled: October 27, 2020Publication date: March 11, 2021Inventor: Bo-Tsung TSAI
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Publication number: 20210074546Abstract: A method includes: receiving a first wafer; defining a first zone and a second zone on the first wafer and a plurality of first areas; defining a plurality of first areas and second areas for the first and second zones, respectively; projecting first ion beams onto the first areas and receiving first thermal waves in response to the first ion beams; rotating the first wafer by a twist angle; projecting second ion beams onto the second areas and receiving second thermal waves in response to the second ion beams; and estimating a first crystalline orientation angle of the first wafer based on the first and second ion beams and the first and second thermal waves.Type: ApplicationFiled: April 7, 2020Publication date: March 11, 2021Inventor: BO-TSUNG TSAI
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Patent number: 10854668Abstract: A pixel including a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a floating diffusion node in the protrusion. The pixel further includes a photosensitive device in the bulk. The pixel further includes an isolation well surrounding the photosensitive device.Type: GrantFiled: May 17, 2019Date of Patent: December 1, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Bo-Tsung Tsai
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Publication number: 20200295072Abstract: A device includes a substrate, a pinning region in the substrate and having a first doping type, a photodiode in the substrate and having a doped region that has a second doping type opposite to the first doping type, and a first conductive contact. The doped region of the photodiode has a first portion below the pinning region and a second portion extending upwards from a top of the first portion of the doped region of the photodiode to a top of the substrate, and the second portion of the doped region of the photodiode is surrounded by the pinning region. The first conductive contact is disposed over and in contact with the second portion of the doped region of the photodiode.Type: ApplicationFiled: June 1, 2020Publication date: September 17, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Bo-Tsung TSAI
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Publication number: 20200295070Abstract: A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.Type: ApplicationFiled: June 1, 2020Publication date: September 17, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventor: Bo-Tsung Tsai
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Patent number: 10672820Abstract: A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.Type: GrantFiled: May 18, 2018Date of Patent: June 2, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventor: Bo-Tsung Tsai
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Patent number: 10672824Abstract: A pixel unit of an image sensor is provided. The pixel unit includes a semiconductor substrate, a light-sensitive element, a contact and a protection layer. The contact is formed right on the light-sensitive element to enable electrical signals outputted from the light-sensitive element to be transmitted to a peripheral circuit. The protection layer is disposed on the light-sensitive element and surrounds the first contact. The electrical signals of the light-sensitive element can be upward transmitted to the peripheral circuit through the contact. Therefore, the light-sensitive element can occupy a big area, and high quantum efficiency (QE) is achieved accordingly.Type: GrantFiled: July 21, 2017Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Bo-Tsung Tsai
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Publication number: 20200105806Abstract: A method includes forming a light-sensitive element in a substrate. The substrate is doped with a first dopant to form a pinning region over a first portion of the light-sensitive element. A second portion of the light-sensitive element is surrounded by the pinning region. A first contact is formed in contact with the second portion of the light-sensitive element, and a second contact is formed over the pinning region.Type: ApplicationFiled: November 25, 2019Publication date: April 2, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventor: Bo-Tsung TSAI