Patents by Inventor Bo-Wei SHIH

Bo-Wei SHIH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240098330
    Abstract: A display device and a signal source switching method therefore are provided. The display device is connected with a first signal source device and a second signal source device and includes a switching circuit, a receiver circuit and a control circuit. The switching circuit includes a first connection port and a second connection port, which are respectively connected to the first signal source device and the second signal source device. When the control circuit receives a signal source switching command, the control circuit records a current operating state of each of the first signal source device and the second signal source device. When the control circuit receives an active source command from the first signal source device, the control circuit refers to the current operating state to control the switching circuit to switch the image signal source to the first signal source device or the second signal source device.
    Type: Application
    Filed: June 16, 2023
    Publication date: March 21, 2024
    Applicant: Qisda Corporation
    Inventors: Bo-Wei Shih, Li-Chun Chen, I-Hsuan Lai
  • Publication number: 20240045318
    Abstract: An extreme ultraviolet (EUV) mask includes a substrate, a reflective multilayer stack on the substrate, a diffusion barrier layer, a capping layer and a patterned absorber layer. The reflective multilayer stack comprises alternately stacked first layers and second layers. The diffusion barrier layer is on the reflective multilayer stack. The diffusion barrier layer has a composition different from compositions of the first layers and the second layers. The capping layer is on the diffusion barrier layer. The patterned absorber layer is on the reflective multilayer stack.
    Type: Application
    Filed: August 3, 2022
    Publication date: February 8, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Chang LEE, Pei-Cheng HSU, Wei-Hao LEE, Bo-Wei SHIH, Ta-Cheng LIEN
  • Publication number: 20240045317
    Abstract: A method includes forming a reflective multilayer over a substrate; depositing a first capping layer over the reflective multilayer, wherein the first capping layer is made of a ruthenium-containing material or a chromium-containing material; performing a treatment to the first capping layer to introduce nitrogen or fluorine into the first capping layer; forming an absorption layer over the first capping layer; and patterning the absorption layer.
    Type: Application
    Filed: August 2, 2022
    Publication date: February 8, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Chang LEE, Ping-Hsun LIN, Pei-Cheng HSU, Hsuan-I WANG, Hung-Yi TSAI, Bo-Wei SHIH, Ta-Cheng LIEN