Patents by Inventor Bo-Wen HSIEH

Bo-Wen HSIEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure with enlarged gate electrode structure and method for forming the same
    Patent number: 10141416
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: November 27, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Bo-Wen Hsieh, Wen-Jia Hsieh, Yi-Chun Lo, Mi-Hua Lin
  • GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
    Publication number: 20180323270
    Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.
    Type: Application
    Filed: June 22, 2018
    Publication date: November 8, 2018
    Inventors: Bo-Wen HSIEH, Yi-Chun LO, Wen-Jia HSEIH
  • Gate structure and method of fabricating the same
    Patent number: 10008574
    Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: June 26, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Wen Hsieh, Wen-Jia Hsieh, Yi-Chun Lo
  • Semiconductor Structure With Enlarged Gate Electrode Structure And Method For Forming The Same
    Publication number: 20170358653
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.
    Type: Application
    Filed: August 25, 2017
    Publication date: December 14, 2017
    Inventors: Bo-Wen HSIEH, Wen-Jia HSIEH, Yi-Chun LO, Mi-Hua LIN
  • Semiconductor structure with enlarged gate electrode structure and method for forming the same
    Patent number: 9748350
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: August 29, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Bo-Wen Hsieh, Wen-Jia Hsieh, Yi-Chun Lo, Mi-Hua Lin
  • GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
    Publication number: 20170154972
    Abstract: A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over the semiconductor substrate, a first work function metal layer disposed over the gate dielectric layer and lining a bottom surface of an inner sidewall of the spacer, and a filling metal partially wrapped by the first work function metal layer. The filling metal includes a first portion and a second portion, wherein the first portion is between the second portion and the semiconductor substrate, and the second portion is wider than the first portion.
    Type: Application
    Filed: October 13, 2016
    Publication date: June 1, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Wen HSIEH, Wen-Jia HSIEH, Yi-Chun LO
  • SEMICONDUCTOR STRUCTURE WITH ENLARGED GATE ELECTRODE STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20170125534
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate stack structure formed over a substrate. The gate stack structure includes a gate electrode structure having a first portion and a second portion and a first conductive layer below the gate electrode structure. In addition, the first portion of the gate electrode structure is located over the second portion of the gate electrode structure, and a width of a top surface of the first portion of the gate electrode structure is greater than a width of a bottom surface of the second portion of the gate electrode structure.
    Type: Application
    Filed: October 30, 2015
    Publication date: May 4, 2017
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Bo-Wen HSIEH, Wen-Jia HSIEH, Yi-Chun LO, Mi-Hua LIN